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中国物理学会期刊
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Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistorJ. Acta Physica Sinica, 2012, 61(16): 166101. DOI: 10.7498/aps.61.166101
Citation: Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistorJ. Acta Physica Sinica, 2012, 61(16): 166101. DOI: 10.7498/aps.61.166101
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Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor

Acta Phys. Sin., 2012, 61(16): 166101.
DOI: 10.7498/aps.61.166101
CSTR: 32037.14.aps.61.166101
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