纤锌矿氮化物量子阱中光学声子模的三元混晶效应

屈媛; 班士良

doi:10.7498/aps.59.4863

摘要

本文先比较了几种常用方法(修正的无规元素等位移模型、虚晶近似和简化相干势近似等)对纤锌矿三元混晶体声子频率的拟合结果,再选用与实验数据接近的拟合方法,结合介电连续和单轴晶体模型导出含纤锌矿三元混晶InxGa1－xN和AlxGa1－xN单量子阱各类光学声子模的色散关系,进一步分析了声子模随组分的变化. 结果表明,修正的无规元素等位移模型对单模性纤锌矿

关键词:

Firstly, some results about the frequencies of phonons in wurtzite ternary mixed crystals (TMCs) fitted by several methods (modified random-element-isodiplacement model (MREI), virtual crystal approximation, and simplified coherent potential approximation, etc.) are compared. Then, combined with the continuous dielectric model and uniaxial crystal model, a fitting method available to experimental data is adopted to derive the dispersion relations of different kinds of optical phonon modes in TMC InxGa1－xN and AlxGa1－xN quantum wells. Furthermore, the variation of phonon modes dependent on the composition is analyzed. The results show that the fitting by the MREI for phonon frequencies of wurtzite TMCs with one-mode property agrees better with the experimental data. It can be also found that the optical phonon modes in quantum wells vary with the composition. The phonon modes, such as localized modes, interface modes, half-space modes, and propagating modes, exist in certain composition regions and frequency regions due to the anisotropy of phonon dispersion of wurtzite nitrides. Moreover, the shape of the same kind of phonon modes also varies with the composition.

Keywords:

作者及机构信息

屈媛,
班士良

1.
内蒙古大学物理科学与技术学院,内蒙古自治区高等学校半导体光伏技术重点实验室,呼和浩特 010021

基金项目: 国家自然科学基金(批准号: 60966001)、内蒙古自治区自然科学基金重点项目(批准号: 20080404Zd02)和高等学校博士学科点专项科研基金(批准号: 20070126001)资助的课题.

Authors and contacts

1.
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China

参考文献

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施引文献

[1]	Kong Y C, Zheng Y D 2006 Prog. Phys. 26 127 (in Chinese) [孔月婵、郑有炓 2006 物理学进展 26 127]
[2]	Reine M B, Hairston A, Lamarre P, Wong K K, Tobin S P, Sood A K, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy Jr C R, Chowdhury U, Wong M M, Dupuis R D, Li T, DenBaars S P 2006 Proc. SPIE 6119 611901
[3]	Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H, Schaff W J, Saito Y, Nanishi Y 2002 Appl. Phys. Lett. 80 3967
[4]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[5]	Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese)[雷双瑛、沈波、张国义 2008 57 2386]
[6]	Jiang Y, Luo Y, Xi G Y, Wang L, Li H T, Zhao W, Han Y J 2009 Acta Phys. Sin. 58 7282 (in Chinese) [江洋、罗毅、席光义、汪莱、李洪涛、赵维、韩彦军2009 58 7282]
[7]	Rigutti L, Castaldini A, Meneghini M, Cavallini A 2008 Semicond. Sci. Tech. 23 025004
[8]	Lochthofen A, Mertin W, Bacher G, Furitsch M, Brüderl G, Strauss U, Hrle V 2008 J. Phys. D: Appl. Phys. 41 135115
[9]	Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta Phys. Sin. 57 472 (in Chinese) [沈光地、张剑铭、邹德恕、徐晨、顾晓玲2008 57 472]
[10]	Zhang J M, Zou D S, Xu C, Zhu Y X, Liang T, Da X L, Shen G D 2007 Chin. Phys. 16 1135
[11]	Li Z H, Yu T J, Yang Z J, Feng Y C, Zhang G Y, Guo B P, Niu H B 2005 Chin. Phys. 14 830
[12]	Hao G D, Ban S L, Jia X M 2007 Chin. Phys. 16 3766
[13]	Harima H, Inoue T, Nakashima S, Okumura H, Ishida Y, Yoshida S, Koizumi T, Grille H, Bechstedt F 1999 Appl. Phys. Lett. 74 191
[14]	Davydov V Y, Goncharuk I N, Smirnov A N, Nikolaev A E, Lundin W V, Usikov A S, Klochikhin A A, Aderhold J, Graul J, Semchinova O, Harima H 2002 Phys. Rev. B 65 125203
[15]	Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin S A, Tretyakov V, Temkin H 2001 J. Appl. Phys. 89 7977
[16]	Tabata A, Leite J R, Lima A P, Silveira E, Lemos V, Frey T, As D J, Schikora D, Lischka K 1999 Appl. Phys. Lett. 75 1095
[17]	Alexson D, Bergman L, Nemanich R J, Dutta M, Stroscio M A, Parker C A, Bedair S M, El-Masry N A, Adar F 2001 J. Appl. Phys. 89 798
[18]	Chen Y S, Shockley W, Pearson G L 1966 Phys. Rev. 151 648
[19]	Chang I F, Mitra S S 1968 Phys. Rev. 172 924
[20]	Yu S G, Kim K W, Bergman L, Dutta M, Stroscio M A, Zavada J M 1998 Phys. Rev. B 58 15283
[21]	Liang X X, Ban S L 2004 Chin. Phys. 13 71
[22]	Martin T P 1975 Phys. Status Solidi B 67 137
[23]	Grille H, Schnittler Ch, Bechstedt F 2000 Phys. Rev. B 61 6091
[24]	Ban S L, Hasbun J E 1999 Eur. Phys. J. B 8 453
[25]	Yu X L, Ban S L 2003 J. Inner Mongolia University (Sci. Ed.) 34 235 (in Chinese) [于晓龙、班士良 2003 内蒙古大学学报(自然科学版) 34 235]
[26]	Liaci F, Bigenwald P, Briot O, Gil B, Briot N, Cloitre T, Aulombard R L 1995 Phys. Rev. B 51 4699
[27]	Osamura K, Nakajima K, Murakami Y, Shingu P H, Ohtsuki A 1972 Solid State Commun. 11 617
[28]	Lee B C, Kim K W, Stroscio M A, Dutta M 1998 Phys. Rev. B 58 4860
[29]	Komirenko S M, Kim K W, Stroscio M A, Dutta M 1999 Phys. Rev. B 59 5013
[30]	Wendler L 1985 Phys. Status Solidi B 129 513
[31]	Loudon R 1964 Adv. Phys. 13 423
[32]	Lü J T, Cao J C 2005 J. Appl. Phys. 97 033502
[33]	Shi J J 2003 Phys. Rev. B 68 165335
[34]	Zheng R S, Matsuura M 1999 Phys. Rev. B 60 4937
[35]	Zheng R S, Taguchi T, Matsuura M 2000 J. Appl. Phys. 87 2526
[36]	Wei S Y, Zhang F, Huang W D, Li W, Zhao X 2006 Chinese J. Liq. Cryst. Displays 21 336 (in Chinese) [危书义、张芳、黄文登、李伟、赵旭 2006 液晶与显示 21 336]
[37]	Wang X J, Wang L L, Huang W Q, Tang L M, Zou B S, Chen K Q 2007 Acta Phys. Sin. 56 429(in Chinese) [王新军、王玲玲、黄维清、唐黎明、邹炳锁、陈克求 2007 56 429]
[38]	Bungaro C, Rapcewicz K, Bernholc J 2000 Phys. Rev. B 61 6720
[39]	Demangeot F, Groenen J, Frandon J, Renucci M A, Briot O, Clur S, Aulombard R L 1998 Appl. Phys. Lett. 72 2674
[40]	Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[41]	Harima H 2002 J. Phys. : Condens. Matter 14 R967
[42]	Walukiewicz W, Ager III J W, Yu K M, Liliental-Weber Z, Wu J, Li S X, Jones R E, Denlinger J D 2006 J. Phys. D: Appl. Phys. 39 R83
[43]	Behr D, Niebuhr R, Wagner J, Bachem K H, Kaufmann U 1997 Gallium Nitride and Related Materials II (Pittsburgh: Materials Research Society) p213

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