| [1] |
Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping. Carrier mobility in doped Sb2Se3 based on deformation potential theory. Acta Physica Sinica,
2024, 73(4): 047101.
doi: 10.7498/aps.73.20231406
|
| [2] |
Li Xue, Cao Bao-Long, Wang Ming-Hao, Feng Zeng-Qin, Chen Shu-Fen. Perovskite light-emitting diode based on combination of modified hole-injection layer and polymer composite emission layer. Acta Physica Sinica,
2021, 70(4): 048502.
doi: 10.7498/aps.70.20201379
|
| [3] |
Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong. Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica,
2020, 69(1): 018101.
doi: 10.7498/aps.69.20191269
|
| [4] |
Pan Hong-Ying, Quan Zhi-Jue. Effects of p-layer hole concentration and thickness on performance of p-i-n InGaN homojunction solar cells. Acta Physica Sinica,
2019, 68(19): 196103.
doi: 10.7498/aps.68.20191042
|
| [5] |
Fan Wei-Li, Yang Zong-Lin, Zhang Zhen-Yun, Qi Jun-Jie. Preparation and performance of high-efficient hole-transport-material-free carbon based perovskite solar cells. Acta Physica Sinica,
2018, 67(22): 228801.
doi: 10.7498/aps.67.20181457
|
| [6] |
He Lin, Yi Shi-He, Lu Xiao-Ge. Experimental study on the density characteristics of a supersonic turbulent boundary layer. Acta Physica Sinica,
2017, 66(2): 024701.
doi: 10.7498/aps.66.024701
|
| [7] |
Pu Nian-Nian, Li Hai-Rong, Xie Long-Zhen. Influence of NiOx hole-transporting layer on the light absorption of the polymer solar cells. Acta Physica Sinica,
2014, 63(6): 067201.
doi: 10.7498/aps.63.067201
|
| [8] |
Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica,
2013, 62(15): 157301.
doi: 10.7498/aps.62.157301
|
| [9] |
Liu Bai-Quan, Lan Lin-Feng, Zou Jian-Hua, Peng Jun-Biao. A novel organic light-emitting diode by utilizing double hole injection layer. Acta Physica Sinica,
2013, 62(8): 087302.
doi: 10.7498/aps.62.087302
|
| [10] |
Hu Yan-Chun, Wang Yan-Wen, Zhang Ke-Lei, Wang Hai-Ying, Ma Heng, Lu Qing-Feng. Hole doping effects on structure and magnetic properties of Sr2FeMoO6. Acta Physica Sinica,
2012, 61(22): 226101.
doi: 10.7498/aps.61.226101
|
| [11] |
Zhao Li, Liu Dong-Yang, Liu Dong-Mei, Chen Ping, Zhao Yi, Liu Shi-Yong. Analysis of organic photovoltaic devices with MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N- phenylamin) triphenylamine as hole transport layer. Acta Physica Sinica,
2012, 61(8): 088802.
doi: 10.7498/aps.61.088802
|
| [12] |
Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica,
2012, 61(16): 166101.
doi: 10.7498/aps.61.166101
|
| [13] |
Chen Su-Jie, Yu Jun-Sheng, Wen Wen, Jiang Ya-Dong. Influence of NPB:CBP modulated hole transporting layer on yellow organic light-emitting device characteristics. Acta Physica Sinica,
2011, 60(3): 037202.
doi: 10.7498/aps.60.037202
|
| [14] |
Zhu De-Xi, Zhen Hong-Yu, Ye Hui, Liu Xu. Polarized blue polymer light-emitting diodes utilizing rubbed hole injection layers. Acta Physica Sinica,
2009, 58(1): 596-601.
doi: 10.7498/aps.58.596
|
| [15] |
Niu Lian-Bin, Guan Yun-Xia. Fullerene-doped hole transport NPB layer in organic light-emitting devices. Acta Physica Sinica,
2009, 58(7): 4931-4935.
doi: 10.7498/aps.58.4931
|
| [16] |
Cao Zhu-Rong, Jiang Shao-En, Chen Jia-Bin, Miao Wen-Yong, Zhou Wei-Min, Chen Ming, Gu Yu-Qiu, Ding Yong-Kun. Diagnostics on DD fuel area density for indirect drive on Shenguang Ⅱ. Acta Physica Sinica,
2007, 56(9): 5330-5334.
doi: 10.7498/aps.56.5330
|
| [17] |
. Effects of emitting and hole transporting layers on the performance of white organic light-emitting divice. Acta Physica Sinica,
2007, 56(12): 7213-7218.
doi: 10.7498/aps.56.7213
|
| [18] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Li Tong, Xing Yan-Hui, Han Jun, Guo Xia, Shen Guang-Di. Investigation of high hole concentration Mg-doped InGaN epilayer. Acta Physica Sinica,
2006, 55(9): 4951-4955.
doi: 10.7498/aps.55.4951
|
| [19] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yao. . Acta Physica Sinica,
2002, 51(1): 163-166.
doi: 10.7498/aps.51.163
|
| [20] |
SU WEN-HUEI, LIU WEI-NA, HE PENG-MIN, QIU SHU-ZHEN. A THEORETICAL CALCULATION OF THE ENERGIES OF VACANCY RELAXATION AND VACANCY FORMATION IN THE FACE-CENTRED CUBIC METALS. Acta Physica Sinica,
1965, 21(10): 1767-1775.
doi: 10.7498/aps.21.1767
|
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