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The organic light emitting diodes with the structure of ITO/NPB(60 nm)/ Alq3 ∶Rubrene(1wt%,20 nm)/Alq3(3 nm)/Alq3:Rubrene(1wt%,20 nm)/ Alq3(20 nm)/LiF/Al, which have multiple quantum well structures (MQW), were fabricated and the magnetic field effects on the efficiency and current of the OLEDs were measured. The experiment showed that the current decreased monotoniocally, i.e. the resistance of the device increased under the magnetic field. At the same time, the magnetic field effect on efficiency was achieved. The changing ratio of efficiency increased 9.13% maximally when the magnetic field was below 20 mT. The changing ratio of efficiency decreased with the magnetic field increasing when the magnetic field was higher than 20 mT.
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Keywords:
- quantum well /
- magnetic field /
- OLED /
- magnetic field effects
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[22] Liu R, Zhang Y, Lei Y L, Chen P, Xiong Z H 2009 J.Appl.Lett. 105 093719
[23] Huang J S,Yang K X,Xie Z Y,Chen B J, Jiang H J, Liu S Y 1998 Appl.Phys.Lett. 73 3348
[24] Huang J S, Yang K X, Liu S Y 2000 Appl. Phys Lett. 77 1750
[25] Liu R, Lei Y L, Zhang Y, Wang Z, Xiong Z H 2009 Sci. China Ser. G 39 662(in Chinese) [刘 荣、雷衍连、张 勇、王 振、熊祖洪 2009 中国科学 G辑 39 662]
[26] Ern V, Merrifield R E 1968 Phys. Rev. Lett. 22 593
[27] Li L,Yu J S, Li W Z, Lin H,Li Q, Jiang Y D 2007 Materials Review. 21 121(in Chinese) [李 璐、于军胜、黎威志、林 慧、李 青、蒋亚东 2007 材料导报 21 121]
[28] Hu B, Yan L, Shao M 2009 Adv.Mater. 21 1500
[29] Chen P, Lei Y L, Song Q L, Zhang Y, Liu R,Zhang Q M, Xiong Z H 2009 Appl.Phys.Lett. 95 213304
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[1] Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[2] Nguyen T D, Rybicki J, Sheng Y, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[3] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnár S, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[4] Hu B, Wu Y 2007 Nat. Mater. 6 985
[5] Xu W, Szulczewski G J, LeClair P, Navarrete I, Schad R, Miao G, Guo H, Gupta A 2007 Appl. Phys. Lett. 90 072506
[6] Naber W J M, Faez S, van der Wiel W G 2007 J. Phys. D: Appl. Phys. 40 R205
[7] Wang L X, Liu D S, Zhang D C, Xie S J, Han S H, Mei L M 2005 Chin. Phys. 14 0186
[8] Liu X J, Gao K, Li Y, Wei J H, Xie S J 2007 Chin. Phys. 16 2091
[9] Lei Y L, Liu R, Zhang Y, Tan X W, Xiong Z H 2009 Acta Phys.Sin. 58 1269(in Chinese)[雷衍连、刘 荣、张 勇、谭兴文、熊祖洪 2009 58 1269]
[10] Li F, Xin L Y, Ma Y G, Shen J C, Liu S Y 2008 Chin. Sci. Bull. 53 2865 (in Chinese) [李 峰、辛林远、马於光、沈家骢、刘式墉 2008 科学通报 53 2865]
[11] Wu Y, Hu B, Howe J, Li A P, Shen J 2007 Phys. Rev. B 75 035213
[12] Kalinowski J, Cocchi M, Virgili D, Fattori V, Di Macro P 2004 Phys. Rev. B 70 205303
[13] Wilkinson J, Davis A H, Bussmann K, Long J P 2005 Appl. Phys. Lett. 86 111109
[14] Kalinowski J, Cocchi M, Virgili D, Marco P D, Fattori V 2003 Chem.Phys. Lett. 380 710
[15] Odaka H,Okimoto Y,Yamada T, Okamoto H, Kawasaki M, Tokura Y 2006 Appl.Phys. Lett. 88 123501
[16] Mermer , Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid.State. Commun.134 631
[17] Francis T L, Mermer ,Veeraraghavan G,Wohlgenannt M 2004 New J.Phys. 185 1
[18] Desai P, Shakya P, Kreouzis T, Gillin W P, Morley N A, Gibbs M R J 2007 Phys. Rev. B 75 094423
[19] Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J.Appl.Lett.102 073710
[20] Shakya P, Desai P, Somerton M, Gannaway G, Kreouzis T, Gillin W P 2008 J. Appl. Phys. 103 3715
[21] Wang Z, He Z H, Tang X W, Tao M L, Li G Q 2007 Acta Phys.Sin. 56 2979(in Chinese)[王 振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979]
[22] Liu R, Zhang Y, Lei Y L, Chen P, Xiong Z H 2009 J.Appl.Lett. 105 093719
[23] Huang J S,Yang K X,Xie Z Y,Chen B J, Jiang H J, Liu S Y 1998 Appl.Phys.Lett. 73 3348
[24] Huang J S, Yang K X, Liu S Y 2000 Appl. Phys Lett. 77 1750
[25] Liu R, Lei Y L, Zhang Y, Wang Z, Xiong Z H 2009 Sci. China Ser. G 39 662(in Chinese) [刘 荣、雷衍连、张 勇、王 振、熊祖洪 2009 中国科学 G辑 39 662]
[26] Ern V, Merrifield R E 1968 Phys. Rev. Lett. 22 593
[27] Li L,Yu J S, Li W Z, Lin H,Li Q, Jiang Y D 2007 Materials Review. 21 121(in Chinese) [李 璐、于军胜、黎威志、林 慧、李 青、蒋亚东 2007 材料导报 21 121]
[28] Hu B, Yan L, Shao M 2009 Adv.Mater. 21 1500
[29] Chen P, Lei Y L, Song Q L, Zhang Y, Liu R,Zhang Q M, Xiong Z H 2009 Appl.Phys.Lett. 95 213304
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