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Controllable precipitation of crystals is one of the key points in the fabrication of chalcogenide glass-ceramics. Glass compositions of 65GeS225Ga2S310CsI (GGC25) and 70GeS220Ga2S310CsI (GGC20) are specifically selected, and their glass-ceramic samples are obtained by careful heat treatment. The transmission spectra, grain sizes, and crystal phases of obtained samples are characterized using visible-near IR spectroscopy, SEM, XRD, and Raman scattering. Different crystallization behaviors are evidenced that GeS2 crystals are precipitated in GGC20 glass, and GGC25 samples show two crystallization mechanisms during the heat treatment, that is, Ga2S3 crystals were first precipitated and then the GeS2 ones. The compositional and the microstructural dependences of crystallization behavior are discussed, which would be a significant reference for the controllable crystallization in chalcogenide glasses.
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Keywords:
- chalcogenide glass /
- crystallization /
- glass network structure /
- Raman spectroscopy
[1] Sanghera J S, Aggarwal I D 1999 J. Non-Cryst. Solids 256-257 6
[2] Zakery A, Elliott S R 2003 J. Non-Cryst. Solids 330 1
[3] Song B A, Dai S X, Xu T F, Nie Q H, Shen X, Wang X S, Lin C G 2011 Acta Phys. Sin. 60 084217 (in Chinese) [宋宝安, 戴世勋, 徐铁峰, 聂秋华, 沈祥, 王训四, 林常规 2011 60 084217]
[4] Sun J, Nie Q, Wang G, Dai S, Zhang W, Song B, Shen X, Xu T 2011 Acta Phys. Sin. 60 114212 (in Chinese) [孙杰, 聂秋华, 王国祥, 戴世勋, 张巍, 宋宝安, 沈祥, 徐铁峰 2011 60 114212]
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[6] Zhang X, Hongli M A Lucas J 2004 J. Non-Cryst. Solids 337 130
[7] Zhang X H, Calvez L, Seznec V, Ma H L, Danto S, Houizot P, Boussard-Plédel C, Lucas J 2006 J. Non-Cryst. Solids 352 2411
[8] Lin C, Calvez L, Bureau B, Ledemi Y, Xu Y, Tao H, Zhang X Zhao X 2010 J. Optoelectron Adv. M. 12 1684
[9] Lin C, Calvez L, Bureau B, Tao H, Allix M, Hao Z, Seznec V, Zhang X Zhao X 2010 Phys. Chem. Chem. Phys. 12 3780
[10] Lin C, Calvez L, Rozé M, Tao H, Zhang X Zhao X 2009 Appl. Phys. A Mater. 97 713
[11] Heo J, Min Yoon J, Ryou S Y 1998 J. Non-Cryst. Solids 238 115
[12] Tverjanovich A, Tveryanovich YS Loheider S 1996 J. Non-Cryst. Solids 208 49
[13] Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235
[14] Lin C, Calvez L, Tao H, Allix M, Moréac A, Zhang X Zhao X 2011 J. Solid. State. Chem. 184 584
[15] Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145
[16] Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29
[17] Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591
[18] Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193
[19] Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327
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[1] Sanghera J S, Aggarwal I D 1999 J. Non-Cryst. Solids 256-257 6
[2] Zakery A, Elliott S R 2003 J. Non-Cryst. Solids 330 1
[3] Song B A, Dai S X, Xu T F, Nie Q H, Shen X, Wang X S, Lin C G 2011 Acta Phys. Sin. 60 084217 (in Chinese) [宋宝安, 戴世勋, 徐铁峰, 聂秋华, 沈祥, 王训四, 林常规 2011 60 084217]
[4] Sun J, Nie Q, Wang G, Dai S, Zhang W, Song B, Shen X, Xu T 2011 Acta Phys. Sin. 60 114212 (in Chinese) [孙杰, 聂秋华, 王国祥, 戴世勋, 张巍, 宋宝安, 沈祥, 徐铁峰 2011 60 114212]
[5] Mecholsky Jun J J, Moynihan C T, Macedo P B Srinivasan G R 1976 J. Mater. Sci. 11 1952
[6] Zhang X, Hongli M A Lucas J 2004 J. Non-Cryst. Solids 337 130
[7] Zhang X H, Calvez L, Seznec V, Ma H L, Danto S, Houizot P, Boussard-Plédel C, Lucas J 2006 J. Non-Cryst. Solids 352 2411
[8] Lin C, Calvez L, Bureau B, Ledemi Y, Xu Y, Tao H, Zhang X Zhao X 2010 J. Optoelectron Adv. M. 12 1684
[9] Lin C, Calvez L, Bureau B, Tao H, Allix M, Hao Z, Seznec V, Zhang X Zhao X 2010 Phys. Chem. Chem. Phys. 12 3780
[10] Lin C, Calvez L, Rozé M, Tao H, Zhang X Zhao X 2009 Appl. Phys. A Mater. 97 713
[11] Heo J, Min Yoon J, Ryou S Y 1998 J. Non-Cryst. Solids 238 115
[12] Tverjanovich A, Tveryanovich YS Loheider S 1996 J. Non-Cryst. Solids 208 49
[13] Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235
[14] Lin C, Calvez L, Tao H, Allix M, Moréac A, Zhang X Zhao X 2011 J. Solid. State. Chem. 184 584
[15] Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145
[16] Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29
[17] Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591
[18] Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193
[19] Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327
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