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Quantum efficiency decay of reflection-mode GaN photocathode is small at short wavelengths and large at long wavelengths. In light of this experimental phenomenon, the emitted electron energy distribution is calculated by using the Boltzmann distribution and transfer matrix method based on Airy function, with the intervalley scattering considered. The effect of surface potential barrier change on quantum efficiency decay is investigated. The results of theoretical calculation are in good agreement with the experiments al results. The reduction of effective dipole in activated layer leads to inereased length and height of surface barrier, which causes more decay of the emitted electron energy distribution generated by longer wavelength photons, and less decay of the emitted electron energy distribution generated by shorter wavelength photons. It is the fundamental reason of phenomenon that the decay of quantum efficiency is small at short wavelengths and large at long wavelengths.
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Keywords:
- GaN photocathode /
- quantum efficiency decay /
- emitted electron energy distribution /
- surface potential barrier
[1] Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Guo X Y, Du X Q 2011 Acta Phys. Sin. 60 047901 (in Chinese) [王晓晖, 常本康, 钱芸生, 高频, 张益军, 郭向阳, 杜晓晴 2011 60 047901
[2] Wang X H, Chang B K, Ren L, Gao P 2011 Appl. Phys. Lett. 98 082109
[3] Tripathi N, Bel L D, Nikzad S, Shahedipour S F 2010 Appl. Phys. Lett. 97 052107
[4] Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良, 田思, 常本康, 杜晓晴, 高频 2009 58 5847
[5] Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良, 常本康, 杜晓晴, 牛军, 邹继军 2010 59 2855
[6] Qiao J L 2010 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [乔建良 2010 博士学位论文 (南京理工大学)]
[7] Siegmund O H W, Tremsin A S, Martin A 2003 Proc of SPIE 134 5164
[8] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Electronic Industry Press) p39 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京: 电子工业出版社) 第39页]
[9] Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541
[10] Guo X Y, Chang B K, Wang X H, Zhang Y J, Yang 2011 Acta Phys. Sin. 60 058101 (in Chinese) [郭向阳, 常本康, 王晓晖, 张益军, 杨铭 2011 60 058101]
[11] Zou J J, Yang Z, Qiao J L 2008 J. Semicond. 29 1479
[12] Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[13] Vergara G, Herrera G A, Spicer W E 1999 Surf. Sci. 436 83
[14] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[15] Bartelink D J, Moll J L, Meyer N L 1963 Phys. Rev. 130 972
[16] Zou J J 2007 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [邹继军 2007 博士学位论文 (南京理工大学)]
[17] Wang H M, Zhang Y F 2005 Acta Phys. Sin. 54 2226 (in Chinese) [王洪梅, 张亚非 2005 54 2226]
[18] Lui W W, Fukuma M 1986 J. Appl. Phys. 60 1555
[19] Zhou S X 1979 Quantum Mechanics (Beijing: Higher Education Press) p44 (in Chinese) [周世勋 1979 量子力学 (北京: 高等教育出版社) 第44页]
[20] Zhang Y J, Zou J J, Wang X H 2011 Chin. Phys. B 20 048501
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[1] Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Guo X Y, Du X Q 2011 Acta Phys. Sin. 60 047901 (in Chinese) [王晓晖, 常本康, 钱芸生, 高频, 张益军, 郭向阳, 杜晓晴 2011 60 047901
[2] Wang X H, Chang B K, Ren L, Gao P 2011 Appl. Phys. Lett. 98 082109
[3] Tripathi N, Bel L D, Nikzad S, Shahedipour S F 2010 Appl. Phys. Lett. 97 052107
[4] Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良, 田思, 常本康, 杜晓晴, 高频 2009 58 5847
[5] Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良, 常本康, 杜晓晴, 牛军, 邹继军 2010 59 2855
[6] Qiao J L 2010 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [乔建良 2010 博士学位论文 (南京理工大学)]
[7] Siegmund O H W, Tremsin A S, Martin A 2003 Proc of SPIE 134 5164
[8] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Electronic Industry Press) p39 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京: 电子工业出版社) 第39页]
[9] Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541
[10] Guo X Y, Chang B K, Wang X H, Zhang Y J, Yang 2011 Acta Phys. Sin. 60 058101 (in Chinese) [郭向阳, 常本康, 王晓晖, 张益军, 杨铭 2011 60 058101]
[11] Zou J J, Yang Z, Qiao J L 2008 J. Semicond. 29 1479
[12] Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[13] Vergara G, Herrera G A, Spicer W E 1999 Surf. Sci. 436 83
[14] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[15] Bartelink D J, Moll J L, Meyer N L 1963 Phys. Rev. 130 972
[16] Zou J J 2007 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [邹继军 2007 博士学位论文 (南京理工大学)]
[17] Wang H M, Zhang Y F 2005 Acta Phys. Sin. 54 2226 (in Chinese) [王洪梅, 张亚非 2005 54 2226]
[18] Lui W W, Fukuma M 1986 J. Appl. Phys. 60 1555
[19] Zhou S X 1979 Quantum Mechanics (Beijing: Higher Education Press) p44 (in Chinese) [周世勋 1979 量子力学 (北京: 高等教育出版社) 第44页]
[20] Zhang Y J, Zou J J, Wang X H 2011 Chin. Phys. B 20 048501
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