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Liu Jun-Ling, Bai Yu-Jie, Xu Ning, Zhang Qin-Fang. First-principles study on electronic structure of GaS/Mg(OH)2 heterostructure. Acta Physica Sinica,
2024, 73(13): 137103.
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Yuan Yong-Kai, Chen Qian, Gao Ting-Hong, Liang Yong-Chao, Xie Quan, Tian Ze-An, Zheng Quan, Lu Fei. Molecular dynamics simulations of GaAs crystal growth under different strains. Acta Physica Sinica,
2023, 72(13): 136801.
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Bai Gang, Han Yu-Hang, Gao Cun-Fa. Phase transitions and electrocaloric effects of (111)-oriented K0.5Na0.5NbO3 epitaxial films: effect of external stress and misfit strains. Acta Physica Sinica,
2022, 71(9): 097701.
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Wang Na, Xu Hui-Fang, Yang Qiu-Yun, Zhang Mao-Lian, Lin Zi-Jing. First-principles study of strain-tunable charge carrier transport properties and optical properties of CrI3 monolayer. Acta Physica Sinica,
2022, 71(20): 207102.
doi: 10.7498/aps.71.20221019
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Pan Feng-Chun, Lin Xue-Ling, Wang Xu-Ming. First-principles study of strain effect on magnetic and optical properties in (Ga, Mo)Sb. Acta Physica Sinica,
2022, 71(9): 096103.
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Jiang Nan, Li Ao-Lin, Qu Shui-Xian, Gou Si, Ouyang Fang-Ping. First principles study of magnetic transition of strain induced monolayer NbSi2N4. Acta Physica Sinica,
2022, 71(20): 206303.
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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
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Zhu Yan, Zhang Xin-Yu, Zhang Su-Hong, Ma Ming-Zhen, Liu Ri-Ping, Tian Hong-Yan. Electron transport properties of Mg2Si under hydrostatic pressures. Acta Physica Sinica,
2015, 64(7): 077103.
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
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Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica,
2014, 63(24): 246101.
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Wang Jiang-Jing, Shao Rui-Wen, Deng Qing-Song, Zheng Kun. Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope. Acta Physica Sinica,
2014, 63(11): 117303.
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Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan. The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica,
2012, 61(3): 036202.
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Gu Fang, Zhang Jia-Hong, Yang Li-Juan, Gu Bin. Molecular dynamics simulation of resonance properties of strain graphene nanoribbons. Acta Physica Sinica,
2011, 60(5): 056103.
doi: 10.7498/aps.60.056103
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Lu Wei, Xu Ming, Wei Yi, He Lin. Investigation on the band structures of AlN/InN and AlN/GaN superlattices. Acta Physica Sinica,
2011, 60(8): 087807.
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Cui Yu-Ting, You Su-Qin, Wu Liang, Ma Yong, Chen Jing-Lan, Pan Fu-Sheng, Wu Guang-Heng. Two-step thermoelastic martensitic transformation and stress-strain characteristic of Ni53.2Mn22.6Ga24.2 single crystal. Acta Physica Sinica,
2009, 58(12): 8596-8601.
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Shi Li-Bin, Zheng Yan, Ren Jun-Yuan, Li Ming-Biao, Zhang Guo-Hua. Strain effect on microwave surface resistance of YBa2Cu3O7-δ/LaAlO3 and Tl2Ba2CaCu2O8/LaAlO3 high temperature superconducting thin films. Acta Physica Sinica,
2008, 57(2): 1183-1189.
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Yao Fei, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Band gap Narrowing in heavily B doped Si1－xGex strained layers. Acta Physica Sinica,
2007, 56(11): 6654-6659.
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Zhang Hong-Di, An Yu-Kai, Mai Zhen-Hong, Gao Ju, Hu Feng-Xia, Wang Yong, Jia Quan-Jie. Thickness effect on structure and magnetic properties of La0.8Ca0.2MnO3/SrTiO3 films. Acta Physica Sinica,
2007, 56(9): 5347-5352.
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Wang Huan-You, Cao Xiao-Ping, Jiang Yi-Min, Liu Mario. Strain and elasticity of static granular matter. Acta Physica Sinica,
2005, 54(6): 2784-2790.
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Cheng Bu-Wen, Yao Fei, Xue Chun-Lai, Zhang Jian-Guo, Li Chuan-Bo, Mao Rong-Wei, Zuo Yu-Hua, Luo Li-Ping, Wang Qi-Ming. A method to estimate the strain state of SiGe/Si by measuring the bandgap. Acta Physica Sinica,
2005, 54(9): 4350-4353.
doi: 10.7498/aps.54.4350
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