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2020, 69(4): 047201.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica,
2016, 65(3): 038402.
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Zhou Nan, Zheng Qiang, Hu Bei-Chen, Shi De-Quan, Miao Chun-Yu, Ma Chun-Yu, Liang Hong-Wei, Hao Sheng-Zhi, Zhang Qing-Yu. Effects of controlled surface states on the photoluminescence emission of GaN film. Acta Physica Sinica,
2014, 63(13): 137802.
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
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Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong. Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica,
2013, 62(1): 017103.
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Li Biao, Chang Ben-Kang, Xu Yuan, Du Xiao-Qing, Du Yu-Jie, Wang Xiao-Hui, Zhang Jun-Ju. Research and development of GaN photocathode. Acta Physica Sinica,
2011, 60(8): 088503.
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica,
2011, 60(10): 107901.
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
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Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin. Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica,
2009, 58(8): 5847-5851.
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica,
2005, 54(9): 4273-4278.
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He Jun, Zheng Hao-Ping. . Acta Physica Sinica,
2002, 51(11): 2580-2588.
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2002, 51(10): 2344-2348.
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2002, 51(11): 2606-2611.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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