离子束表面处理对光电阴极发射的影响

王国建; 刘燕文; 李芬; 田宏; 朱虹; 李云; 赵恒邦; 王小霞; 张志强

doi:10.7498/aps.70.20210587

摘要

为研制大电流密度光电阴极, 提出了一种制备锑铯光电阴极的新方法, 采用专门的离子轰击技术使无氧铜表面纹理化, 提高其吸附性能和光的吸收率, 从而相对于未经处理的无氧铜可以大幅提高光电发射的性能. 研究了表面处理前后的无氧铜基体锑铯光电阴极的发射特性. 利用扫描电子显微镜分析了其表面结构, 处理后的无氧铜为表面无颗粒、坚固、结构均匀的全金属结构体, 使用此工艺无需修改无氧铜加工、焊接或其他光电阴极常规制造工艺. 实验中, 获得的无氧铜基体处理前后的光电阴极稳定发射的最大的光电发射电流密度分别为60.5和146.0 mA/cm², 计算出相应的量子效率分别为2.67 × 10^–3和1.71 × 10^–2, 可知量子效率提高了5.41倍. 分析认为, 表面改性后的光电阴极的量子效率提高的主要原因来自于光吸收率的提高以及发射表面积增大.

关键词:

Abstract

To meet the needs of high-frequency, miniaturized vacuum microwave devices, a new photocathode for microwave vacuum electronic device has been studied. Untreated oxygen-free copper, commonly used for photocathode substrate, exhibits relatively high photoemission characteristics. In this paper, we describe a specialized ion-beam bombardment procedure for textured copper surfaces, thereby improving the photoemission properties relative to untreated copper. The emission characteristics of antimony cesium photocathode on oxygen-free copper substrate before and after surface treatment are studied The photoemission and texture of post-treated oxygen-free copper surface are examined by scanning electron microscope. The results show that the treated surface has a particle-free, robust, uniformly highly-textured all-metal structure. This processing technology does not require to modify the copper machining and brazing, nor normal fabrication procedures of other photocathodes. In the experiment, the maximum photoemission current density of photocathode for the untreated substrate is 60.5 and that for the treated substrate is 146.0 mA/cm², and their corresponding quantum efficiencies are calculated to be 2.67 × 10^–3 and 1.71 × 10^–2, respectively. So, the quantum efficiency is enhanced by 6.41 times. The analysis indicates that the improvement of the quantum efficiency of the treated photocathode is mainly due to the enhancement of the light absorption rate. The results show that the photoemission is enhanced significantly after the substrate has been treated, and there is still much room for improvement.

Keywords:

作者及机构信息

1.
中国科学院空天信息创新研究院, 北京　100190

2.
中国科学院大学, 北京　100049

通信作者: 刘燕文, liuyanwen58@sina.com

基金项目: 国防预研究基金(批准号: 31512010404-1)和国家自然科学基金(批准号: 61771454)资助的课题

Authors and contacts

1.
Chinese Academy of Sciences Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Liu Yan-Wen, liuyanwen58@sina.com

Funds: Project supported by the National Defense Pre-Research Foundation of China (Grant No. 31512010404-1) and the National Natural Science Foundation of China (Grant No. 61771454)

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参考文献

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施引文献

图 1 反射式Cs₃Sb光电阴极的制备结构简图　(a) 未处理无氧铜基体; (b) 离子束处理的无氧铜基体

Fig. 1. Schematic diagram of reflective Cs₃Sb photocathode: (a) Untreated copper plates; (b) ion-textured copper plates.

下载: 全尺寸图片幻灯片

图 2 离子束表面改性专用设备图

Fig. 2. Photo of ion-texturing apparatus.

下载: 全尺寸图片幻灯片

图 3 无氧铜基体电子显微镜照片及成分(Cnt是能谱仪收集的元素特征X射线强度)　(a) 未处理无氧铜表面; (b) 离子束处理的无氧铜表面

Fig. 3. Scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) spectra (Cnt is the X-ray intensity obtained by EDX): (a) Untreated copper surface; (b) ion-textured copper surface.

下载: 全尺寸图片幻灯片

图 4 无氧铜光电阴极基体表面处理前后的照片

Fig. 4. Photo of untreated copper surface and treated copper surface.

下载: 全尺寸图片幻灯片

图 5 光电阴极测试装置

Fig. 5. Photograph of the photocathode test device.

下载: 全尺寸图片幻灯片

图 6 光电阴极制备装置

Fig. 6. Schematic of the preparation of photocathode.

下载: 全尺寸图片幻灯片

图 7 光电发射电流密度与激光强度的关系

Fig. 7. Photoelectric current density versus the laser intensity

下载: 全尺寸图片幻灯片

图 8 光电阴极表面的形貌和成分　(a) 未处理无氧铜表面; (b) 离子束处理的无氧铜表面

Fig. 8. SEM image and EDX spectrum of the photocathode: (a) Untreated copper surface; (b) ion-textured copper surface.

下载: 全尺寸图片幻灯片

图 9 光电阴极表面结构模型示意图　(a) 未处理无氧铜; (b) 离子束处理的无氧铜

Fig. 9. Schematic of the photocathode surface structure: (a) Untreated copper; (b) ion-textured copper.

下载: 全尺寸图片幻灯片

图 10 离子束处理的无氧铜毛刺模型示意图

Fig. 10. Schematic diagram of the photocathode surface structure by ion-textured copper.

下载: 全尺寸图片幻灯片

map

[1]	Liu Y W, Wang X X, Lu Y X 2019 IEEE Trans. Electron. Devices 66 5321 Google Scholar
[2]	Shin Y M, Barnett L R, Gamzina D 2009 Appl. Phys. Lett. 95 181505 Google Scholar
[3]	Sirigiri J R, Shaprio M A, Temkin R J 2003 Phys. Rev. Lett. 90 258302 Google Scholar
[4]	刘燕文, 田宏 2008 中国科学E辑: 技术科学 38 1515 Liu Y W, Tian H 2008 Sci. China Ser. E: Technol. Sci. 38 1515
[5]	Liu Y W, Tian H 2008 Sci. China Ser. E: Technol. Sci. 51 1497 Google Scholar
[6]	Raju R S, Maloney C E 1994 IEEE Trans. Electron. Devices 41 2460 Google Scholar
[7]	Wang J S, Liu W 2009 IEEE Trans. Electron. Devices 56 799 Google Scholar
[8]	Wang X X, Liu Y W 2014 IEEE Trans. Electron. Devices 61 605 Google Scholar
[9]	Gaertner G, Janiel P, Raasch D, et al. 2002 Appl. Surf. Sci. 201 35 Google Scholar
[10]	刘燕文, 田宏, 韩勇, 等 2009 58 8635 Google Scholar Liu Y W, Tian H, Han Y, et al. 2009 Acta. Phys. Sin. 58 8635 Google Scholar
[11]	刘燕文, 刘胜英, 田宏, 等 2006 真空科学与技术学报 26 240 Google Scholar Liu Y W, Liu S Y, Tian H, et al. 2006 Chin. J. Vacuum Sci. Technol. 26 240 Google Scholar
[12]	Barika R K, Beraa A, Rajub R S, et al. 2013 Appl. Surf. Sci. 276 817 Google Scholar
[13]	Isagawa S, Higuchi T, Kobayashi K, et al. 1999 Appl. Surf. Sci. 146 89 Google Scholar
[14]	Zhu J, Wang S L, Xie S H, et al. 2011 Chem. Commun. 47 4403 Google Scholar
[15]	Wang H L, Hao Q L, Yang X J, et al. 2010 Nanoscale 2 2164 Google Scholar
[16]	Whaley D, Duggal R, Armstrong C, et al. 2013 IEEE Proceedings of 14^th International Vacuum Electronics Conference Paris, France, May 21–23, 2013 pp203−204
[17]	刘燕文, 王国建, 田宏, 等 2021 中国科学: 信息科学 51 1575 Google Scholar Liu Y W, Wang G J, Tian H, et al. 2021 Sci. Sin. Inf 51 1575 Google Scholar
[18]	刘燕文, 张耿民, 刘惟敏, 等 1996 北京大学学报 32 96 Google Scholar Liu Y W, Zhang G M, W M, et al. 1996 Acta Sci. Natur. Univ. Pekine. 32 96 Google Scholar
[19]	Somer A H 1963 Appl. Phys. Lett. 3 62 Google Scholar
[20]	Lee C H 1985 IEEE Trans. Nucl. Sci. 32 3045 Google Scholar
[21]	刘燕文, 张耿民, 刘惟敏, 等 1996 中国激光 23 255 Google Scholar Liu Y W, Zhang G M, Liu W M, et al. 1996 Chin. J. Lasers 23 255 Google Scholar
[22]	Liu Y W, Zhang G M, Liu W M, et al. 1996 Nucl. Instrum. Methods Phys. Res., Sect. A 376 146 Google Scholar
[23]	张耿民, 吴全德 1997 北京大学学报 33 97 Google Scholar Zhang G M, Wu Q D 1997 Acta. Sci. Natur. Univ. Pekine. 33 97 Google Scholar
[24]	张篁, 陈德彪 2010 强激光与粒子束 22 583 Google Scholar Zhang H, Chen D B 2010 High Power Laser Part. Beams 22 583 Google Scholar
[25]	杜晓晴, 常本康, 钱芸生, 等 2010 中国激光 37 385 Google Scholar Du X Q, Chang B K, Qian Y S, et al. 2010 Chin. J. Lasers 37 385 Google Scholar
[26]	罗毅, 于汪洋, 王健 2018 中国科学: 信息科学 48 688 Google Scholar Luo Y, Yu W Y, Wang J 2018 Sci. Sin. Inf. 48 688 Google Scholar
[27]	李雅瑶, 王越, 杨德仁 2020 中国科学: 信息科学 50 892 Google Scholar Li Y Y, Wang Y, Yang D R 2020 Sci. Sin. Inf. 50 892 Google Scholar
[28]	郝广辉, 韩攀阳, 李兴辉, 等 2020 69 108501 Google Scholar Hao G H, Han Y, Li X H, et al. 2020 Acta Phys. Sin. 69 108501 Google Scholar
[29]	刘燕文, 田宏, 陆玉新, 等 2019 真空 56 7 Google Scholar Liu Y W, Tian H, Lu Y X, et al. 2019 Vacuum 56 7 Google Scholar
[30]	刘燕文, 田宏, 李芬, 等. 中国发明专利 201810512769X [2018-05-24] Liu Y W, Tian H, Shi W Q, et al. Chin. Patent 201810512769X [2018-05-24] (in Chinese)
[31]	Curren A N, Kenneth A J, Robert F R 1993 Proceedings of IEEE International Electron Devices Meeting Washington, DC, USA, December 5−8, 1993 p4811091
[32]	Ding M Q, Huang M G, Feng J J 2008 Appl. Surf. Sci. 255 2196 Google Scholar
[33]	韩冰, 李超, 唐智勇 2011 物理 40 566 Han B, Li C, Tang Z Y 2011 Physics 40 566
[34]	Halperin W P 1986 Rev. Mod. Phys. 58 533 Google Scholar
[35]	马腾宇, 李万俊, 何先旺, 等 2020 69 108102 Google Scholar Ma T Y, Li W J, He X W, et al. 2020 Acta. Phys. Sin. 69 108102 Google Scholar
[36]	Wang J S, Zhang X Z, Liu W, et al. 2012 Sci. Sin. Inf. 55 98 Google Scholar
[37]	Shin Y M, Zhao J F, Larry R B, et al. 2010 Phys. Plasma 17 123105 Google Scholar
[38]	Han Y, Liu Y W, Ding Y G, et al. 2009 IEEE Electron. Device Lett. 30 820 Google Scholar
[39]	刘燕文, 王小霞, 田宏, 等 2015 中国科学: 信息科学 45 145 Google Scholar Liu Y W, Wang X X, Tian H, et al. 2015 Sci. Sin. Inf. 45 145 Google Scholar
[40]	Liu Y W, Tian H, Han Y 2012 IEEE Trans. Eletron. Devices 59 I36184 Google Scholar
[41]	Kalarasse L, Bennecer B, Kalarasse F 2010 J. Phys. Chem. Solids 71 314 Google Scholar
[42]	Wang G X, Pandey R, Moody N A, Batista E R 2017 J. Phys. Chem. 121 8399 Google Scholar
[43]	刘燕文, 张耿民, 刘惟敏, 等 1995 真空科学与技术学报 15 304 Google Scholar Liu Y W, Zhang G M, Liu W M, et al. 1995 Chin. J. Vac. Sci. Technol. 15 304 Google Scholar
[44]	刘燕文, 孟宪展, 田宏, 等 2018 真空 55 25 Google Scholar Liu Y W, Meng X Z, Tian H, et al. 2018 Vacuum 55 25 Google Scholar
[45]	郎兴凯, 贾鹏, 陈泳屹, 等 2019 中国科学: 信息科学 49 649 Google Scholar Lang X K, Jia P, Chen Y Y, et al. 2019 Sci. Sin. Inf. 49 649 Google Scholar

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[17]	杜晓晴, 常本康. 负电子亲和势光电阴极量子效率公式的修正. , 2009, 58(12): 8643-8650. doi: 10.7498/aps.58.8643
[18]	牛军, 杨智, 常本康, 乔建良, 张益军. 反射式变掺杂GaAs光电阴极量子效率模型研究. , 2009, 58(7): 5002-5006. doi: 10.7498/aps.58.5002
[19]	邹继军, 常本康, 杨智, 高频, 乔建良, 曾一平. GaAs光电阴极在不同强度光照下的稳定性. , 2007, 56(10): 6109-6113. doi: 10.7498/aps.56.6109
[20]	邹继军, 常本康, 杨智. 指数掺杂GaAs光电阴极量子效率的理论计算. , 2007, 56(5): 2992-2997. doi: 10.7498/aps.56.2992

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