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Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li. Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica,
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Wang Guo-Jian, Liu Yan-Wen, Li Fen, Tian Hong, Zhu Hong, Li Yun, Zhao Heng-Bang, Wang Xiao-Xia, Zhang Zhi-Qiang. Effect of ion-beam surface treatment on photocathode emission. Acta Physica Sinica,
2021, 70(21): 218503.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Ding Mei-Bin, Lou Chao-Gang, Wang Qi-Long, Sun Qiang. Influence of quantum wells on the quantum efficiency of GaAs solar cells. Acta Physica Sinica,
2014, 63(19): 198502.
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Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica,
2013, 62(3): 037303.
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Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun. Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica,
2012, 61(18): 187901.
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Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang. Comparison between gradient-doping and uniform-doping GaN photocathodes. Acta Physica Sinica,
2011, 60(4): 047901.
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Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Qiao Jian-Liang. Study of spectral response for transmission-modeNEA GaN photocathodes. Acta Physica Sinica,
2011, 60(5): 057902.
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2011, 60(5): 058101.
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Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang. Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica,
2011, 60(3): 038503.
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Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang. Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica,
2011, 60(6): 067301.
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2011, 60(10): 107802.
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Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui. Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica,
2011, 60(1): 017903.
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Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica,
2010, 59(11): 8078-8082.
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Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica,
2010, 59(4): 2855-2859.
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Zhou Mei, Zhao De-Gang. A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica,
2009, 58(10): 7255-7260.
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Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun. Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica,
2009, 58(7): 5002-5006.
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping. Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica,
2007, 56(10): 6109-6113.
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica,
2007, 56(5): 2992-2997.
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Chang Jun-Tao, Wu Ling-An. Absolute self-calibration of the quantum efficiency of single-photon detectors. Acta Physica Sinica,
2003, 52(5): 1132-1136.
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