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Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li. Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica,
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Wang Guo-Jian, Liu Yan-Wen, Li Fen, Tian Hong, Zhu Hong, Li Yun, Zhao Heng-Bang, Wang Xiao-Xia, Zhang Zhi-Qiang. Effect of ion-beam surface treatment on photocathode emission. Acta Physica Sinica,
2021, 70(21): 218503.
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Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing. Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica,
2017, 66(22): 227801.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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2014, 63(19): 198502.
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Yang Yong-Fu, Fu Rong-Guo, Zhang Yi-Jun, Wang Xiao-Hui, Zou Ji-Jun. Effect of surface potential barrier on electron escape probability of GaN photocathode. Acta Physica Sinica,
2012, 61(6): 068501.
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Yang Yong-Fu, Fu Rong-Guo, Ma Li, Wang Xiao-Hui, Zhang Yi-Jun. Effect of surface potential barrier on quantum efficiency decay of reflection-mode GaN photocathode. Acta Physica Sinica,
2012, 61(12): 128504.
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Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Qiao Jian-Liang. Study of spectral response for transmission-modeNEA GaN photocathodes. Acta Physica Sinica,
2011, 60(5): 057902.
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Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang. Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica,
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Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui. Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica,
2011, 60(1): 017903.
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Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang. Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica,
2011, 60(6): 067301.
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Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu. Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica,
2011, 60(10): 107802.
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Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan. Adsorption efficiency of cesium in activation process for GaAs photocathode. Acta Physica Sinica,
2011, 60(4): 044209.
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Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan. Evaluation of surface potential barriers after activation of GaAs photocathode. Acta Physica Sinica,
2011, 60(4): 044210.
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Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming. Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica,
2011, 60(5): 058101.
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Yang Zhi, Zou Ji-Jun, Chang Ben-Kang. Research on the optimal thickness of transmission-mode exponential-doping GaAs photocathode. Acta Physica Sinica,
2010, 59(6): 4290-4295.
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Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica,
2010, 59(4): 2855-2859.
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Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun. Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica,
2009, 58(7): 5002-5006.
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Du Xiao-Qing, Chang Ben-Kang. Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica,
2009, 58(12): 8643-8650.
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica,
2007, 56(5): 2992-2997.
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