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High-density In-Al codoped ZnO (In, Al, ZnO) nanobunches are synthesized by using chemical vapor deposition method, which can be used to fabricate In, Al, ZnO nanobunches photodetectors. The ZnO nanobunches each have a hexagonal wurtzite structure. It is found that the average length of the nanobunches is ～5 m. The photoconduction mechanism and a series of photoelectric characteristics are studied including I-V characteristic measured in dark and UV illumination, responsivity and response time. The results indicate the presence of an internal gain mechanism. The response time is less than 0.5 s and decay time is about 23 s, so the fabricated device can indeed be used for light detection.
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Keywords:
- In-Al codoped ZnO /
- nanobunches /
- photodetector /
- chemical vapor deposition
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[1] Look D C 2001 Mater. Sci. Eng. B 80 383
[2] Ohtomo A, Kawasaki M, Sakurai Y, Yoshida Y, Koinuma H, Yu P,Tang Z K, Wong G K L, Segawa Y 1998 Mater. Sci. Eng. B 54 24
[3] Bae S Y, Na C W, Kang J H, Park J 2005 J. Phys. Chem. B 1092526
[4] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H2004 Nature 432 488
[5] Liu K, Sakurai M, Aono M 2010 Sensors 10 8604
[6] Wang J W, Bian J M, Sun J C, Liang H W, Zhao J Z, Du G T 2008Acta Phys. Sin. 57 5212 (in Chinese) [王经纬,边继明, 孙景昌, 梁红伟, 赵涧泽, 杜国同 2008 57 5212]
[7] Wang R, King L H, Sleight A W 1996 J. Mater. Res. 11 1659
[8] Chen M, Pei Z L, Wang X, Sun C, Wen L S 2001 J. Vac. Sci.Technol. A 19 963
[9] Lee J H, Park B O 2003 Thin Solid Films 426 94
[10] Zhou H M, Yi D Q, Yu Z M, Xiao L R, Li J 2007 Thin Solid Films515 6909
[11] Guo M T, Li L, Zhang X F 2007 Laser Journal 5 32 [郭茂田, 李丽, 张晓芳 2007 激光杂志 5 32]
[12] Gruber Th, Kirchner C, Kling R, Reuss F, Waag A 2004 Appl.Phys. Lett. 84 5359
[13] Zhang C Z, Gao H, Hu J M, Li H R, Hu G Z 2009 Natur. Sci. J.Harbin Nor. Univ. 5 81 (in Chinese) [张春志, 高红, 胡建民,李浩茹, 胡广洲 2009 哈尔滨师范大学自然科学学报 5 81]
[14] Wu X, Cai W, Qu F Y 2009 Acta Phys. Sin. 58 11 (in Chinese) [武祥, 蔡伟, 曲凤玉 2009 58 11]
[15] Wei A, Sun X W, Xu C X, Dong Z L, Yu M B, Huang W 2006Appl. Phys. Lett. 88 213102
[16] Lin S S, He H P, Ye Z Z, Zhao B H, Huang J Y 2008 J. Appl. Phys.104 114307
[17] Jie J S, Zhang W J, Jiang Y, Meng X M, Li Y Q, Lee S T 2006Nano Lett. 6 1887
[18] Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, BaoX Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003
[19] Jin Y Z, Wang J P, Sun B Q, Blakesley J C, Greenham N C 2008Nano Lett. 8 1649
[20] Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez F J,Diaz J, Razeghi M 1999 Appl. Phys. Lett. 74 762
[21] Ahn S E, Lee J S, Kim H, Kim S, Kang B H, Kim K H, Kim G T2004 Appl. Phys. Lett. 84 5022
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