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中国物理学会期刊
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Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei. Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiationJ. Acta Physica Sinica, 2011, 60(9): 098502. DOI: 10.7498/aps.60.098502
Citation: Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei. Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiationJ. Acta Physica Sinica, 2011, 60(9): 098502. DOI: 10.7498/aps.60.098502
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Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation

Acta Phys. Sin., 2011, 60(9): 098502.
DOI: 10.7498/aps.60.098502
CSTR: 32037.14.aps.60.098502
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