Study on proton irradiation induced defects in GaN thick film

Zhang Ming-Lan; Yang Rui-Xia; Li Zhuo-Xin; Cao Xing-Zhong; Wang Bao-Yi; Wang Xiao-Hui

doi:10.7498/aps.62.117103

Abstract

Proton-irradiation-induced defects threaten seriously the stable performance of GaN-based devices in harsh environments, such as outer space. It is therefore urgent to understand the behaviors of proton-irradiation-induced defects for improving the radiation tolerance of GaN-based devices. Positron annihilation spectroscopy (PAS) has been used to study proton-induced defects in GaN grown by HVPE. The result shows that VGa is the main defects and no (VGaVN) or (VGaVN)2 is formed in 5 MeV proton-irradiated GaN. Photoluminescence (PL) spectrum is carried out at 10K. After irradiation, the band edge shows a blue-shift, but the donor-acceptor pair (DAP) emission band and its LO-phonon replicas is kept at the original position. The intensity of yellow luminescence (YL) band is decreased, which means that the origin of YL band has no relation with VGa. The increased FWHM of GaN (0002) peak in proton-irradiated GaN indicates a degradation of crystal quality.

Keywords:

GaN /
defect /
proton /
irradiation

Authors and contacts

1.
Colleage of Information Engineering, Hebei University of Technology, Tianjin 300401, China;
2.
Key Laboratory of Semiconductor Materials Science Institute, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
3.
Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Funds: Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20111317120005), the Key Program for Science and Technology Research of Higher Education Institution of Hebei province, China (Grant No. ZD2010124), and the National Natural Science Foundation of China (Grant No. 61076004).

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Cited By

[1]	Kim Nam Hyeong 2009 Ph. D. Dissertation (Ohio: Ohio State University)
[2]	Kuriyama K, Ooi M, Onoue A, Kushida K, okada M, Xu Q 2006 Appl. Phys. Lett. 88 132109
[3]	Polyakov Y, Lee In-Hwan, Smirnov N B, Govorkov A V, Kozhukhova E A, Kolin N G, Korulin A V, Boiko V M, Pearton S J 2011 J. Appl. Phys. 109 123703
[4]	Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Tang J, Hu G X 2008 Chin. Phys. Lett. 25 1045
[5]	Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Hubei: Science and Technology Press) p33 (in Chinese) [王少阶, 陈志权, 王波, 吴亦初, 方鹏飞, 张永学 2008 应用正电子谱学(湖北: 湖北科学技术出版社)第33页]
[6]	Hautakangas S, Makkonen I, Ranki V, Puska M J, Saarinen K, Xu X, Look D C 2006 Phys. Rev. B 73 193301
[7]	Hautojarvi P 1995 Materials Science Forum 175-178 47
[8]	Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park S S, Lee S K, Han J Y 2003 Appl. Phys. Lett. 82 3433
[9]	Wang R X, Xu S J, Fung S, Beling C D, Wang K, Li S, Wei Z F, Zhou T J, Zhang J D, Huang Ying, Gong M 2005 Appl. Phys. Lett. 87 031906
[10]	Saarinen K, Laine T, Kuisma S, Nissilä J, Hautojärvi P, Dobrzynski L, Baranowski J M, Pakula K, Stepniewski R, Wojdak M, Wysmolek A, Suski T, Leszczynski M, Grzegory I, and Porowski S 1997 Phys. Rev. Lett. 79 3030
[11]	Armitage R, Hong William, Yang Qing, Feick H, Gebauer J, Weber E R, Hautakangas S, Saarinen K 2003 Appl. Phys. Lett. 82 3457
[12]	Ogino T, Aoki M 1980 Jpn. J. Appl. Phys. 19 2395
[13]	Lyons J L, Janotti A, Van de Walle C G 2010 Appl. Phys. Lett. 97 152108
[14]	Paskova T, Arnaudov B, Paskov P P, Goldys E M, Hautakangas S, Saarinen K, Södervall U, Monemar B 2005 J. Appl. Phys. 98 033508

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Catalog

Vol. 62, Issue 11 - 2013-06-05

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