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Chen Jing-Jing, Zhao Hong-Po, Wang Kui, Zhan Hui-Min, Luo Ze-Yu. Molecular dynamics simulation of mechanical strengthening properties of SiC substrate covered with multilayer graphene. Acta Physica Sinica,
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Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong. Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica,
2023, 72(2): 024208.
doi: 10.7498/aps.72.20221303
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Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
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Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian. Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica,
2021, 70(4): 044702.
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Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica,
2017, 66(1): 017501.
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Wu Li-Qian, Qi Wei-Hua, Li Yu-Chen, Li Shi-Qiang, Li Zhuang-Zhi, Xue Li-Chao, Ge Xing-Shuo, Ding Li-Li. Influence of thermal treatment on the ionic valence and the magnetic structure of perovskite manganites La0.95Sr0.05MnO3. Acta Physica Sinica,
2016, 65(2): 027501.
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Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou. Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica,
2015, 64(6): 067303.
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
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Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun. Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100). Acta Physica Sinica,
2011, 60(9): 095203.
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Zhang Yong, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Yang Yi-Tao. Study on nanohardness of helium-implanted 4H-SiC. Acta Physica Sinica,
2010, 59(6): 4130-4135.
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Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC. Acta Physica Sinica,
2010, 59(8): 5652-5660.
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
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Wu Yu-Yu, Chen Shi, Gao Xin-Yu, Andrew Thye Shen Wee, Xu Peng-Shou. Synchrotron radiation angle-resolved photoelectron spectroscopy studies of 6H-SiC（0001）-6[KF（]3[KF）]×6[KF（]3[KF）] R30° surface. Acta Physica Sinica,
2009, 58(6): 4288-4294.
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Liu Fu, Zhou Ji-Cheng, Tan Xiao-Chao. First-principles study on 3C-SiC(001)-(2×1)surface atomic structure and electronic structure. Acta Physica Sinica,
2009, 58(11): 7821-7825.
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica,
2008, 57(7): 4119-4124.
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica,
2006, 55(6): 2992-2996.
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Xu Peng-Shou, Li Yong-Hua, Pan Hai-Bin. First principle study on β-SiC(001)-(2×1) surface structure. Acta Physica Sinica,
2005, 54(12): 5824-5829.
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Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui. Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica,
2003, 52(1): 211-216.
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Jiang Zhen-Yi, Xu Xiao-Hong, Wu Hai-Shun, Zhang Fu-Qiang, Jin Zhi-Hao. . Acta Physica Sinica,
2002, 51(7): 1586-1590.
doi: 10.7498/aps.51.1586
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