| [1] |
Chen Jing-Jing, Zhao Hong-Po, Wang Kui, Zhan Hui-Min, Luo Ze-Yu. Molecular dynamics simulation of mechanical strengthening properties of SiC substrate covered with multilayer graphene. Acta Physica Sinica,
2024, 73(10): 109601.
doi: 10.7498/aps.73.20232031
|
| [2] |
Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong. Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica,
2023, 72(2): 024208.
doi: 10.7498/aps.72.20221303
|
| [3] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
doi: 10.7498/aps.71.20211796
|
| [4] |
Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian. Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica,
2021, 70(4): 044702.
doi: 10.7498/aps.70.20201303
|
| [5] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica,
2017, 66(1): 017501.
doi: 10.7498/aps.66.017501
|
| [6] |
Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou. Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica,
2015, 64(6): 067303.
doi: 10.7498/aps.64.067303
|
| [7] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
| [8] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
doi: 10.7498/aps.61.027202
|
| [9] |
Wang You-Fa, Wu Zhou-Li, Li Wen-Run, Wang Shuai, Tong Hong-Shuang, Ruan Yong-Feng. Spectroscopic properties of cerium doped YVO4 crystals and analysis on valence state of cerium ion. Acta Physica Sinica,
2012, 61(22): 228105.
doi: 10.7498/aps.61.228105
|
| [10] |
Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun. Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100). Acta Physica Sinica,
2011, 60(9): 095203.
doi: 10.7498/aps.60.095203
|
| [11] |
Zhang Yong, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Yang Yi-Tao. Study on nanohardness of helium-implanted 4H-SiC. Acta Physica Sinica,
2010, 59(6): 4130-4135.
doi: 10.7498/aps.59.4130
|
| [12] |
Zhang Yu, Wen Bin, Song Xiao-Yang, Li Ting-Ju. Synthesis and bonding properties of carbon nanotubes with different nitrogen contents. Acta Physica Sinica,
2010, 59(5): 3583-3588.
doi: 10.7498/aps.59.3583
|
| [13] |
Xu Hui, Wang Shun-Li, Liu Ai-Ping, Chen Ben-Yong, Tang Wei-Hua. Electronic state and its effect on the hydrophilicity of Cu/TiOx composite films. Acta Physica Sinica,
2010, 59(5): 3601-3606.
doi: 10.7498/aps.59.3601
|
| [14] |
Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC. Acta Physica Sinica,
2010, 59(8): 5652-5660.
doi: 10.7498/aps.59.5652
|
| [15] |
Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
doi: 10.7498/aps.58.3443
|
| [16] |
Ding Wan-Yu, Xu Jun, Lu Wen-Qi, Deng Xin-Lu, Dong Chuang. An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering. Acta Physica Sinica,
2009, 58(6): 4109-4116.
doi: 10.7498/aps.58.4109
|
| [17] |
Li Yang-Ping, Liu Zheng-Tang, Liu Wen-Ting, Yan Feng, Chen Jing. Preparation and properties of GeC thin films deposited by reactive RF magnetron sputtering. Acta Physica Sinica,
2008, 57(10): 6587-6592.
doi: 10.7498/aps.57.6587
|
| [18] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica,
2008, 57(7): 4125-4129.
doi: 10.7498/aps.57.4125
|
| [19] |
Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica,
2006, 55(6): 2992-2996.
doi: 10.7498/aps.55.2992
|
| [20] |
Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui. Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica,
2003, 52(1): 211-216.
doi: 10.7498/aps.52.211
|
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