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Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong. Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica,
2023, 72(2): 024208.
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang. Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica,
2022, 71(3): 037301.
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Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
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2021, 70(4): 044702.
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Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica,
2017, 66(1): 017501.
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2015, 64(6): 067303.
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Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
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2011, 60(9): 095203.
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Han Ru, Fan Xiao-Ya, Yang Yin-Tang. Temperature-dependent Raman property of n-type SiC. Acta Physica Sinica,
2010, 59(6): 4261-4266.
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Zhang Yong, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Yang Yi-Tao. Study on nanohardness of helium-implanted 4H-SiC. Acta Physica Sinica,
2010, 59(6): 4130-4135.
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Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC. Acta Physica Sinica,
2010, 59(8): 5652-5660.
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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts. Acta Physica Sinica,
2009, 58(5): 3443-3447.
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica,
2008, 57(7): 4125-4129.
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Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica,
2008, 57(7): 4119-4124.
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Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu. Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica,
2006, 55(10): 5036-5040.
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Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica,
2006, 55(6): 2992-2996.
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2002, 51(7): 1586-1590.
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