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Al doped ZnO films of different thickness have been prepared on glass substrates by dc magnetron sputtering, these films were annealed in different atmosphere . The crystal structures were analyzed by x-ray diffraction (XRD), and the magnetic properties were measured by a Physical Properties Measurement System (PPMS) with the magnetic field paralleled to the films plane. The results indicate that with increase of the thickness, the crystallinity of the thin films gets better and the crystallites of the Al doped ZnO thin films increase gradually, whereas the internal stresses decreased. The results show the films annealed in air shows obvious room temperature ferromagnetism. With the increase of the film thickness the saturation magnetization is enhanced, and the coercivity is weakened.
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Keywords:
- Al doped ZnO films /
- film thickness /
- internal stresses /
- ferromagnetism
[1] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[2] Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3] Liu X C, Shi E W, Chen Z Z, Zhang H W, Xiao B, Song L X 2006 Appl. Phys. Lett. 88 252503
[4] Kane M H, Shalini K, Summers C J, Varatharajan R, Nause J, Vestal C R, Zhang Z J, Ferguson I T 2005 J. Appl. Phys. 97 023906
[5] Liu L Q, Xiang B, Zhang X Z, Zhang Y, Yu D P 2006 Appl.Phys.Lett. 88 063104
[6] Liu X X, Lin F T, Sun L L, Cheng W J, Ma X M, Shi W Z 2006 Appl. Phys. Lett. 88 062508
[7] Herng T S, Lau S P, Yu S F, Yu S F, Yang H Y, Wang L, Tanemura M, Chen J S 2007 Appl. Phys. Lett. 90 032509
[8] Karmakar D, Mandal S K, Kadam R M, Paulose P L, Rajarajan A K, Nath T K, Das A K, Dasgupta I, Das G P 2007 Phys. Rev. B 75 144404
[9] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnar S, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[10] Lu Z L, Zou W Q, Ming X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Liu X C, Zhang H W, Zhang T, Chen B, Chen Z, Song L,Shi E 2008 Chin. Phys. B 17 1371
[12] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 ( in Chinese) [岂云开、顾建军、刘力虎、张海峰、俆 芹、孙会元 2011 〖15] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[15] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[16] Lim W T, Lee C H 1999 Thin Solid Films 353 12
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[1] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[2] Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H, Lee J F, Chen S F, Lai L Y, Liu C P 2006 Appl. Phys. Lett. 88 242507
[3] Liu X C, Shi E W, Chen Z Z, Zhang H W, Xiao B, Song L X 2006 Appl. Phys. Lett. 88 252503
[4] Kane M H, Shalini K, Summers C J, Varatharajan R, Nause J, Vestal C R, Zhang Z J, Ferguson I T 2005 J. Appl. Phys. 97 023906
[5] Liu L Q, Xiang B, Zhang X Z, Zhang Y, Yu D P 2006 Appl.Phys.Lett. 88 063104
[6] Liu X X, Lin F T, Sun L L, Cheng W J, Ma X M, Shi W Z 2006 Appl. Phys. Lett. 88 062508
[7] Herng T S, Lau S P, Yu S F, Yu S F, Yang H Y, Wang L, Tanemura M, Chen J S 2007 Appl. Phys. Lett. 90 032509
[8] Karmakar D, Mandal S K, Kadam R M, Paulose P L, Rajarajan A K, Nath T K, Das A K, Dasgupta I, Das G P 2007 Phys. Rev. B 75 144404
[9] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnar S, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[10] Lu Z L, Zou W Q, Ming X, Zhang F M 2010 Chin. Phys. B 19 056101
[11] Liu X C, Zhang H W, Zhang T, Chen B, Chen Z, Song L,Shi E 2008 Chin. Phys. B 17 1371
[12] Hou D L, Ye X J, Meng H J, Zhou H J, Li X L, Zhen C M, Tang G D 2007 Appl. Phys. Lett. 90 142502
[13] Ma Y W, Ding J, Yi J B, Zhang H T, Ng C M 2009 J. Appl. Phys. 105 07C503
[14] Qi Y K, Gu J J, Liu L H, Zhang H F, Xu Q, Sun H Y 2011 Acta Phys. Sin. 60 057502 ( in Chinese) [岂云开、顾建军、刘力虎、张海峰、俆 芹、孙会元 2011 〖15] Gu J J, Liu L H, Qi Y K, Xu Q, Zhang H F, Sun H Y 2011 J. Appl. Phys. 109 023902
[15] Zhang Y B, Li S, Goh G K L, Tripathy S 2008 Appl. Phys. Lett. 93 102510
[16] Lim W T, Lee C H 1999 Thin Solid Films 353 12
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