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A brand-new magnetostrictive/piezoelectric laminated composite is presented using the giant magnetostrictive Terfenol-D, piezoelectric PZT and high-permeability FeCuNbSiB. Since the high-permeability FeCuNbSiB changes the effective magnetic field in the Terfenol-D and the deformed FeCuNbSiB applies a stress to the Terfenol-D in an external magnetic field, thus the saturation magnetostrictive coefficient of Terfenol-D is enhanced, resulting in a higher magnetoelectric voltage output for the composite. Based on the equivalent magnetic charge theory, the effect of the FeCuNbSiB on the effective magnetic field in the Terfenol-D is analyzed, and the magnetostrictive coefficient of Terfenol-D and the theoretical formula of low-frequency magnetoelectric voltage coefficient are derived based on the nonlinear constitutive model of magnetostrictive material and the equivalent circuit method. The analytical results accord with the experiments qualitatively, and the magnetoelectric voltage of the composite is 1.3 times as high as that of the Terfenol-D/PZT-8H (MP) composite. The experimental results indicate that the thickness of FeCuNbSiB has a great influence on magnetoelectric property. The magnetoelectric voltage coefficient increases nearly linearly with the increase of the thickness of FeCuNbSIB until 180μm.
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Keywords:
- magnetoelectric effect /
- magnetostrictive material /
- piezoelectric material /
- high-permeability material
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[2] Folen V J, Rado G T, Stalder E W 1961 Phys. Rev. Lett. 6 607
[3] Rado G T, Folen V J 1961 Phys. Rev. Lett. 7 310
[4] Ryu J, Carazo A V,Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948
[5] Srinivasan G, Rasmussen E T, Hayes R 2003 Phys. Rev. B 67 14418
[6] Srinivasan G, Rasmussen E T, Bush A A, Kametsev K E, Meshcheryakov V F, Fetisov Y K 2004 Appl. Phys. A 78 721
[7] Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferroelectr. Freq. Contrl. 51 793
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[9] Giang D T H, Quynh L K, Dung N V, Nghi N H 2009 J. Phys.: Conf. Ser. 187 012057
[10] Dong S X, Li J F, Viehland D 2006 J. Mater. Sci. 41 97
[11] Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese) [杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 56 3539]
[12] Li P, Wen Y M, Bian L X 2007 Appl. Phys. Lett. 90 022503
[13] Yang W W, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin . 57 4545 (in Chinese) [杨伟伟、文玉梅、李 平、卞雷祥 2008 57 4545]
[14] Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 58 546]
[15] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 58 4205]
[16] Or S W, Nersessian N, Carman G P 2004 IEEE Trans. Magn. 40 71
[17] Dong S X, Zhai J Y, Li J F, Viehland D 2006 J. Appl. Phys. 100 124108
[18] Wan Y P, Fang D N 2003 Acta Mech. Sin. 19 324
[19] Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 95 2625
[20] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferroelectr. Freq. Contrl. 50 1253
[21] Ryu J, Priya S, Carazo A V, Uchino K 2001 J. Am. Ceram. Soc. 84 2905
[22] Wan J G, Liu J M 2003 J. Appl. Phys. 93 9916
[23] Chang C M, Carman G P 2007 Phys. Rev. B 76 134116
[24] Aharoni A 1998 J. Appl. Phys. 83 3432
[25] Liang C B, Qing G 1980 Electromagnetics (Beijing: Higher Education Press) p464 (in Chinese) [梁灿彬、秦 光 1980 电磁学(北京: 高等教育出版社) 第464页]
[26] Van Roy W, De Boeck J, Borghs G 1992 Appl. Phys. Lett. 61 3056
[27] Yi J Z 1987 Magnetic Field Calculation and Magnetic Circuit Design (Chengdu: Chengdu Electronic Information Engineering College Press) p16 (in Chinese) [易敬曾 1987 磁场计算与磁路设计(成都: 成都电讯工程学院出版社) 第16页]
[28] Zheng X J, Liu X E 2005 J. Appl. Phys. 97 053901
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[1] Landau L D, Lifshitz E 1960 Electrodynamics of Continuous Media (Oxford: Pergamon Press) p119
[2] Folen V J, Rado G T, Stalder E W 1961 Phys. Rev. Lett. 6 607
[3] Rado G T, Folen V J 1961 Phys. Rev. Lett. 7 310
[4] Ryu J, Carazo A V,Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948
[5] Srinivasan G, Rasmussen E T, Hayes R 2003 Phys. Rev. B 67 14418
[6] Srinivasan G, Rasmussen E T, Bush A A, Kametsev K E, Meshcheryakov V F, Fetisov Y K 2004 Appl. Phys. A 78 721
[7] Dong S X, Li J F, Viehland D 2004 IEEE Trans. Ultrason. Ferroelectr. Freq. Contrl. 51 793
[8] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305
[9] Giang D T H, Quynh L K, Dung N V, Nghi N H 2009 J. Phys.: Conf. Ser. 187 012057
[10] Dong S X, Li J F, Viehland D 2006 J. Mater. Sci. 41 97
[11] Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese) [杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 56 3539]
[12] Li P, Wen Y M, Bian L X 2007 Appl. Phys. Lett. 90 022503
[13] Yang W W, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin . 57 4545 (in Chinese) [杨伟伟、文玉梅、李 平、卞雷祥 2008 57 4545]
[14] Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 58 546]
[15] Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 58 4205]
[16] Or S W, Nersessian N, Carman G P 2004 IEEE Trans. Magn. 40 71
[17] Dong S X, Zhai J Y, Li J F, Viehland D 2006 J. Appl. Phys. 100 124108
[18] Wan Y P, Fang D N 2003 Acta Mech. Sin. 19 324
[19] Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 95 2625
[20] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrason. Ferroelectr. Freq. Contrl. 50 1253
[21] Ryu J, Priya S, Carazo A V, Uchino K 2001 J. Am. Ceram. Soc. 84 2905
[22] Wan J G, Liu J M 2003 J. Appl. Phys. 93 9916
[23] Chang C M, Carman G P 2007 Phys. Rev. B 76 134116
[24] Aharoni A 1998 J. Appl. Phys. 83 3432
[25] Liang C B, Qing G 1980 Electromagnetics (Beijing: Higher Education Press) p464 (in Chinese) [梁灿彬、秦 光 1980 电磁学(北京: 高等教育出版社) 第464页]
[26] Van Roy W, De Boeck J, Borghs G 1992 Appl. Phys. Lett. 61 3056
[27] Yi J Z 1987 Magnetic Field Calculation and Magnetic Circuit Design (Chengdu: Chengdu Electronic Information Engineering College Press) p16 (in Chinese) [易敬曾 1987 磁场计算与磁路设计(成都: 成都电讯工程学院出版社) 第16页]
[28] Zheng X J, Liu X E 2005 J. Appl. Phys. 97 053901
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