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A modified Landau-Devonshire thermodynamic model is presented, with the contributions of substrate stress, domain wall motion and domain structure transition taken into account. The hysteresis loops of PbZr0.4Ti0.6O3(PZT) films, which are deposited on different substrates, containing nano-scale grain is calculated, and the thickness and grain size dependences of coercive field, remnant polarization and relative permittivity are researched. The results demonstrate that the grain size is dependent on coercive field and relative permittivity as shown in paraboliclike curve, that the pressure stress of substrate enhances the coercive field and remnant polarization, but reduces the relative permittivity, and that the coercive field increases slowly first with the thickness of film, then increases sharply between 200 nm and 310 nm of the thickness, and slowly again after 310 nm. This result is due to the thickness dependence of relative permittivity.
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Keywords:
- ferroelectric /
- grain size /
- substrate stress /
- thickness
[1] Chang C Y, Juan T P, Lee J Y 2006 Appl. Phys. Lett. 88 072917
[2] Liu B T, Maki K, Agganval S, Naganraj B, Nagarajan V, Salamanca-Riba L, Ramesh R, Dhote A M, Auciello O 2002 Appl. Phys. Lett. 80 3599
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[5] Tao Y M, Jiang Q 2004 Chin. Phys. 13 1149
[6] Ai S T 2006 Chin. Phys. 15 1364
[7] Zhong W L, Wang Y G, Zhang P L, Qu B D 1994 Phys. Rev. B 50 698
[8] Wang Y G, Zhong W L, Zhang P L 1994 Phys. Rev. B 53 11439
[9] Ricinschi D, Tura D, Mitoseriu L, Okuyama M 1999 J. Phys.: Condens. Matter 11 1601
[10] Ducharme S, Fridkin V M, Bune A V, Palto S P, Blinov L M, Petukhova N N, Yudin S G 2000 Phys. Rev. Lett. 84 175
[11] Bratkovsky A M, Levanyuk A P 2001 Phys. Rev. Lett. 87 019701
[12] Ducharme S, Fridkin V M 2001 Phys. Rev. Lett. 87 019702
[13] Moreira R L 2002 Phys. Rev. Lett. 88 179701
[14] Ducharme S, Fridkin V M 2002 Phys. Rev. Lett. 88 179702
[15] Fridkin V M, Ducharme S 2001 Phys. Solid State 43 1320
[16] Kim S, Gopalan V, Gruverman A 2002 Appl. Phys. Lett. 80 2740
[17] Dawber M, Chandra P, Littlewood P B, Scott J F 2003 J. Phys.: Condens. Matter 15 L393
[18] Chandra P, Dawber M, Littlewood P B, Scott J F 2004 Ferroelectrics 313 7
[19] Liu J S, Zhang S R, Zheng H Z, Yang C T, Yuan Y 2005 Phys. Rev. B 72 172101
[20] Mattews J W, Blakeslee A E 1974 J. Cryst. Growth 27 118
[21] Alpay S P, Misirlioglu I B, Sharma A, Ban Z G 2004 J. Appl. Phys. 95 8118
[22] Wang Y L, Wei T R, Liu B T, Deng Z C 2007 Acta Phys. Sin. 56 2931 (in Chinese) [王英龙、魏同茹、刘保亭、邓泽超 2007 56 2931]
[23] Kopal A, Bahnik T, Fousek J 1997 Ferroelectrics 202 206
[24] Udayakumar K R, Schuele P J, Chen J, Krupanidhi S B, Cross L E 1995 J. Appl. Phys. 77 3981
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[1] Chang C Y, Juan T P, Lee J Y 2006 Appl. Phys. Lett. 88 072917
[2] Liu B T, Maki K, Agganval S, Naganraj B, Nagarajan V, Salamanca-Riba L, Ramesh R, Dhote A M, Auciello O 2002 Appl. Phys. Lett. 80 3599
[3] Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3067 (in Chinese) [郑分刚、陈建平、李新碗 2006 55 3067]
[4] Zeng H R, Yu H F, Chu R Q, Li G R, Yin Q R, Tang X G 2005 Acta Phys. Sin. 54 1437 (in Chinese) [曾华荣、余寒峰、初瑞清、李国荣、殷庆瑞、唐新桂 2005 54 1437]
[5] Tao Y M, Jiang Q 2004 Chin. Phys. 13 1149
[6] Ai S T 2006 Chin. Phys. 15 1364
[7] Zhong W L, Wang Y G, Zhang P L, Qu B D 1994 Phys. Rev. B 50 698
[8] Wang Y G, Zhong W L, Zhang P L 1994 Phys. Rev. B 53 11439
[9] Ricinschi D, Tura D, Mitoseriu L, Okuyama M 1999 J. Phys.: Condens. Matter 11 1601
[10] Ducharme S, Fridkin V M, Bune A V, Palto S P, Blinov L M, Petukhova N N, Yudin S G 2000 Phys. Rev. Lett. 84 175
[11] Bratkovsky A M, Levanyuk A P 2001 Phys. Rev. Lett. 87 019701
[12] Ducharme S, Fridkin V M 2001 Phys. Rev. Lett. 87 019702
[13] Moreira R L 2002 Phys. Rev. Lett. 88 179701
[14] Ducharme S, Fridkin V M 2002 Phys. Rev. Lett. 88 179702
[15] Fridkin V M, Ducharme S 2001 Phys. Solid State 43 1320
[16] Kim S, Gopalan V, Gruverman A 2002 Appl. Phys. Lett. 80 2740
[17] Dawber M, Chandra P, Littlewood P B, Scott J F 2003 J. Phys.: Condens. Matter 15 L393
[18] Chandra P, Dawber M, Littlewood P B, Scott J F 2004 Ferroelectrics 313 7
[19] Liu J S, Zhang S R, Zheng H Z, Yang C T, Yuan Y 2005 Phys. Rev. B 72 172101
[20] Mattews J W, Blakeslee A E 1974 J. Cryst. Growth 27 118
[21] Alpay S P, Misirlioglu I B, Sharma A, Ban Z G 2004 J. Appl. Phys. 95 8118
[22] Wang Y L, Wei T R, Liu B T, Deng Z C 2007 Acta Phys. Sin. 56 2931 (in Chinese) [王英龙、魏同茹、刘保亭、邓泽超 2007 56 2931]
[23] Kopal A, Bahnik T, Fousek J 1997 Ferroelectrics 202 206
[24] Udayakumar K R, Schuele P J, Chen J, Krupanidhi S B, Cross L E 1995 J. Appl. Phys. 77 3981
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