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Using trans-2-butene and hydrogen as the precursor, the glow discharge polymer films was successfully coated on KBr discs by glow discharge polymerization at different powers. The chemical structure, thermal stability of the GDP films and the deposition rate of GDP films were characterized by the FT-IR, TG and surface profiler technology. The Results show that the deposition rate, the olefinic structure, the ratio of C/H, and the content of C C in GDP films increase with the RF power increasing. The thermal stability of GDP films fabricated at higher RF power is better.
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Keywords:
- GDP films /
- FT-IR spectrum /
- thermal stability /
- RF-power
[1] Vermillion B A, Bousquet J T, Andrews R E, Thi M, Hoppe M L, Castillo E R, Nikroo A, Goodin D T, Besenbruch G E 2007 General Atomics Report GA-A25702
[2] Nikroo A, Bousquet, R. Cook, McQuillan B W, Paguio R, Takagi M 2003 General Atomics Report GA-A24483
[3] Nikroo A, Castillo E, Hill D, Greenwood A L 2003 General Atomics Report GA-A24453
[4] Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436(in Chinese)[张宝玲、 何智兵、 吴卫东、 刘兴华、 杨向东 2009 58 6436]
[5] Bauer M, T Schwarz-Selinger, Jacob W 2005 J. Appl. Phys. 98 73302
[6] Chou L H, Wang H W 1993 J. Appl. Phys. 74 4673
[7] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[8] Bounouh Y, Thèye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[9] Piazza F, Golanski A, Schulze S, Relihan G 2003 Appl. Phys. Lett. 82 358
[10] Grill A, Pate1 V 1992 Appl. Phys. Lett. 60 2089
[11] Czechowicz D G, Castillo E R, Nikroo A 2002 General Atomics Report GA-A23753
[12] Li H X, Xu T, Chen J M, Zhou H D, Liu H W 2003 J. Phys. D: Appl. Phys. 36 3183
[13] Li H X, X T, H, Chen J M, Zhou H D, Liu H W 2005 Acta Phys. Sin. 54 1885(in Chinese)[李红轩、 徐 洮、 陈建敏、 周惠娣、 刘惠文 2005 54 1885]
[14] Xiao J R, XV H, Guo A M, Wang H Y 2007 Acta Phys. Sin. 56 1806(in Chinese)[肖剑荣、 徐 慧、 郭爱敏、 王焕友 2007 56 1802]
[15] Chou L H, Wang H W 1993 J. Appl. Phys. 74 1
[16] Huang S, Xin Y, Ning Z Y, Cheng S H, Lu X H 2002 Acta Phys. Sin. 51 2635 (in Chinese) [黄 松、 辛 煜、 宁兆元、 程珊华、 陆新华 2002 51 2635]
[17] Kim M H, Lee J Y, 1991 Journal of Materials Science 26 4787
[18] Jiang X, Beyer W, Reichelt K 1990 J. Appl. Phys. 68 1378
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[1] Vermillion B A, Bousquet J T, Andrews R E, Thi M, Hoppe M L, Castillo E R, Nikroo A, Goodin D T, Besenbruch G E 2007 General Atomics Report GA-A25702
[2] Nikroo A, Bousquet, R. Cook, McQuillan B W, Paguio R, Takagi M 2003 General Atomics Report GA-A24483
[3] Nikroo A, Castillo E, Hill D, Greenwood A L 2003 General Atomics Report GA-A24453
[4] Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 6436(in Chinese)[张宝玲、 何智兵、 吴卫东、 刘兴华、 杨向东 2009 58 6436]
[5] Bauer M, T Schwarz-Selinger, Jacob W 2005 J. Appl. Phys. 98 73302
[6] Chou L H, Wang H W 1993 J. Appl. Phys. 74 4673
[7] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[8] Bounouh Y, Thèye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[9] Piazza F, Golanski A, Schulze S, Relihan G 2003 Appl. Phys. Lett. 82 358
[10] Grill A, Pate1 V 1992 Appl. Phys. Lett. 60 2089
[11] Czechowicz D G, Castillo E R, Nikroo A 2002 General Atomics Report GA-A23753
[12] Li H X, Xu T, Chen J M, Zhou H D, Liu H W 2003 J. Phys. D: Appl. Phys. 36 3183
[13] Li H X, X T, H, Chen J M, Zhou H D, Liu H W 2005 Acta Phys. Sin. 54 1885(in Chinese)[李红轩、 徐 洮、 陈建敏、 周惠娣、 刘惠文 2005 54 1885]
[14] Xiao J R, XV H, Guo A M, Wang H Y 2007 Acta Phys. Sin. 56 1806(in Chinese)[肖剑荣、 徐 慧、 郭爱敏、 王焕友 2007 56 1802]
[15] Chou L H, Wang H W 1993 J. Appl. Phys. 74 1
[16] Huang S, Xin Y, Ning Z Y, Cheng S H, Lu X H 2002 Acta Phys. Sin. 51 2635 (in Chinese) [黄 松、 辛 煜、 宁兆元、 程珊华、 陆新华 2002 51 2635]
[17] Kim M H, Lee J Y, 1991 Journal of Materials Science 26 4787
[18] Jiang X, Beyer W, Reichelt K 1990 J. Appl. Phys. 68 1378
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