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In order to effectively analyze the statistical power consumption of RC interconnect tree with process fluctuation, a method of constructing interconnect parasitic parameters and driving point admittance moments is first presented in this paper. Then, the expressions of mean and standard deviations of interconnect power consumption are obtained. The calculation results indicate that the errors of mean and standard deviations are less than 4.36 % and 6.68 % respectively compared with those calculated by the widely used Monte Carlo method. Results show that the proposed method has a good accuracy and high efficiency.
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Keywords:
- process variations /
- RC interconnect /
- statistical power consumption
[1] Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[2] Li X, Wang J M, Tang W Q 2009 Acta Phys. Sin. 58 3603 (in Chinese) [李 鑫、Wang J M、唐卫清 2009 2009 58 3603]
[3] Agarwal K, Agarwal M, Sylvester D,Blaauw D 2006 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 25 1273
[4] Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、钟 波、郝报田、杨银堂 2009 2009 58 7124]
[5] Shen R, Tan X D, Mi N, Cai Y 2010 Integration, The VLSI Journal 43 156
[6] Alioto M, Palumbo G, Poli M 2006 IEEE Transactions on VLSI Systems 14 452
[7] Chen G, Friedman E G 2008 IEEE Transactions on Circuits and Systems II 55 26
[8] Alioto M, Palumbo G, Poli M 2005 Proc. of PATMOS, Leuven, Belgium, September 21—23, 2005 p355
[9] Ku J C, Ismail Y I 2007 IEEE Transactions on VLSI Systems 15 963
[10] Dadgour H F, Lin S C, Banerjee K 2007 IEEE Transactions on Electron Devices 54 2930
[11] Jaffari J, Anis M 2008 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 27 1027
[12] Chern J H, Huang J, Arledge L, Li P C, Yang P 1992 IEEE Electron Devices Letters 13 32
[13] O’Brien P R, Savarino T L 1989 IEEE International Conference on Computer-Aided Design. Santa Clara, California, USA,November 5—9 1989 p512
[14] Singhee A, Rutenbar R A 2007 Proc. DATE, Nice, France, April 16—20, 2007 p1379
[15] Meng K, Joseph R 2006 International Symposium on Low Power Electronics and Design, Tegernsee, Bavaria, Germany, October 4—6, 2006 p262
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[1] Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[2] Li X, Wang J M, Tang W Q 2009 Acta Phys. Sin. 58 3603 (in Chinese) [李 鑫、Wang J M、唐卫清 2009 2009 58 3603]
[3] Agarwal K, Agarwal M, Sylvester D,Blaauw D 2006 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 25 1273
[4] Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、钟 波、郝报田、杨银堂 2009 2009 58 7124]
[5] Shen R, Tan X D, Mi N, Cai Y 2010 Integration, The VLSI Journal 43 156
[6] Alioto M, Palumbo G, Poli M 2006 IEEE Transactions on VLSI Systems 14 452
[7] Chen G, Friedman E G 2008 IEEE Transactions on Circuits and Systems II 55 26
[8] Alioto M, Palumbo G, Poli M 2005 Proc. of PATMOS, Leuven, Belgium, September 21—23, 2005 p355
[9] Ku J C, Ismail Y I 2007 IEEE Transactions on VLSI Systems 15 963
[10] Dadgour H F, Lin S C, Banerjee K 2007 IEEE Transactions on Electron Devices 54 2930
[11] Jaffari J, Anis M 2008 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 27 1027
[12] Chern J H, Huang J, Arledge L, Li P C, Yang P 1992 IEEE Electron Devices Letters 13 32
[13] O’Brien P R, Savarino T L 1989 IEEE International Conference on Computer-Aided Design. Santa Clara, California, USA,November 5—9 1989 p512
[14] Singhee A, Rutenbar R A 2007 Proc. DATE, Nice, France, April 16—20, 2007 p1379
[15] Meng K, Joseph R 2006 International Symposium on Low Power Electronics and Design, Tegernsee, Bavaria, Germany, October 4—6, 2006 p262
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