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This paper deals with the exchange bias and its thermal stability in magnetic BiFeO3/Ni81Fe19 bilayer sputtered under an electromagnetic field. The results show that the BiFeO3/Ni18Fe19 bilayer presents an in-plane uniaxial magnetic anisotropy and a significant exchange bias effect, however the exchange bias field Hex in the BiFeO3/Ni18Fe19 bilayer does not show a visible training effect. The forward and recoil loop shifts towards positive fields, while holding the film in a negative saturation field. Hex decreases monotonously with the increase in the holding time (tsat), whereas Hc is almost the same. With increasing temperature Tm, Hex will not alter significantly, which means that Hex is not sensitive to the temperature, showing a good thermal stability. However, Hc may reduce rapidly with the increase in temperature. We believe that the good thermal stability may result from the coupling between ferroelectric and antiferromagnetic moments in BiFeO3.
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Keywords:
- multiferroic /
- magnetic films /
- exchange bias /
- thermal stability
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[23] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W, Ramesh R 2009 Science 326 977
[24] Yuan X, Xue X, Zhang X, Wen Z, Yang M, Du J, Wu D, Xu Q 2012 Solid State Commun. 152 241
[25] Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793
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[1] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[2] Malozemoff A P 1987 Phys. Rev. B 35 3679
[3] Fernandez-Outon L E, Vallejo-Fernandez G, Manzoor S, Hillebrands B, O'Grady K 2008 J. Appl. Phys. 104 093907
[4] Lenssen K M H, vanKesteren H W, Rijks T, Kools J C S, deNooijer M C, Coehoorn R, Folkerts W 1997 Sensor. Actuat. A 60 90
[5] Coehoorn R, Kools J C S, Rijks T, Lenssen K M H 1998 Philips J. Res. 51 93
[6] Lee K, Kang S H 2010 IEEE Trans. Magn. 46 1537
[7] Cao J, Freitas P P 2010 J. Appl. Phys. 107 09E712
[8] Wu J G, Wang J 2010 J. Alloy. Compd. 507 L4
[9] Matsuda M, Fishman R S, Hong T, Lee C H, Ushiyama T, Yanagisawa Y, Tomioka Y, Ito T 2012 Phys. Rev. Lett. 109 067205
[10] Fiebig M, Lottermoser T, Frohlich D, Goltsev A V, Pisarev R V 2002 Nature 419 818
[11] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719
[12] Chai C L, Teng J, Yu G H, Zhu F W, Lai W Y, Xiao J M 2002 Acta Phys. Sin. 51 1846 (in Chinese) [柴春林, 滕蛟, 于广华, 朱逢吾, 赖武彦, 肖纪美 2002 51 1846]
[13] Zhou G H, Wang Y G, Qi X J 2009 Chin. Phys. Lett. 26 037501
[14] Li F F, Sharif R, Jiang L X, Zhang X Q, Han X F, Wang Y, Zhang Z 2005 J. Appl. Phys. 98 113710
[15] Li Y F, Xiao J Q, Dimitrov D V 2002 J. Appl. Phys. 91 7227
[16] Tang X, Dai J, Zhu X, Song W, Sun Y 2011 J. Alloy. Compd. 509 4748
[17] Wu J, Wang J 2010 J. Am. Ceram. Soc. 93 1422
[18] Binek C, Polisetty S, He X, Berger A 2006 Phys. Rev. Lett. 96 067201
[19] Xi H, Franzen S, Mao S, White R M 2007 Phys. Rev. B 75 014434
[20] Zhou G H, Wang Y G, Qi X J, Li Z Q, Chen J K 2009 Chin. Phys. B 18 790
[21] Han D H, Gao Z, Mao S I, Ding J R 2000 J. Appl. Phys. 87 6424
[22] Nishioka K 1999 J. Appl. Phys. 86 6305
[23] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W, Ramesh R 2009 Science 326 977
[24] Yuan X, Xue X, Zhang X, Wen Z, Yang M, Du J, Wu D, Xu Q 2012 Solid State Commun. 152 241
[25] Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793
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