Thermal stability study of Weyl semimetal WTe<sub>2</sub>/Ti heterostructures by Raman scattering

Liu Na; Wang Yi; Li Wen-Bo; Zhang Li-Yan; He Shi-Kun; Zhao Jian-Kun; Zhao Ji-Jun

doi:10.7498/aps.71.20220712

Abstract

Weyl semimetal Td-phase WTe₂, a novel topological matter, possesses a strong spin-orbit coupling and non-trivial topological band structure, and thus becomes a very promising superior spin current source material. By constructing the WTe₂/Ti heterostructures, the issue that the ferromagnetic layer with perpendicular magnetic anisotropy cannot be directly prepared on WTe₂ layer can be well addressed, and meet the requirements for high-performance spin-orbit torque devices. To be compatible with the semiconductor technology, the device integration usually involves a high temperature process. Therefore, the thermal stability of WTe₂/Ti is critical for practical device fabrication and performance. However, the thermal stability of WTe₂/Ti interface has not been very clear yet. In this work, the micro-Raman scattering technique is used to systematically study the WTe₂/Ti interface annealed at different temperatures. It is found that the thermal stability of the interface between WTe₂ and Ti is related to the thickness of WTe₂ flake; appropriate increase of the WTe₂ thickness can lead to the improvement of thermal stability in WTe₂/Ti heterostructures. In addition, high temperature annealing can cause a significant interfacial reaction. After annealed at 473 K for 30 min, the interface between WTe₂ (12 nm) and Ti changes dramatically, leading to the formation of Ti-Te interface layer. This observation is highly consistent with the observations by high-resolution transmission electron microscopy and the elemental analysis results as well. This study will provide useful information for further exploring the influence of the WTe₂/Ti interface on the spin-orbit torque effect, and greatly invigorate the research area of energy efficient spintronic devices based on WTe₂ and other novel topological materials.

Keywords:

Authors and contacts

1.
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
2.
School of Chemical Engineering, Dalian University of Technology, Dalian 116024, China
3.
Zhejiang Hikstor Technology Company, Hangzhou 311305, China

Corresponding author: Wang Yi, yiwang@dlut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12074052), the Natural Science Foundation for Outstanding Young Scientists of Liaoning Province, China (Grant No. 2021-YQ-06), and the Fundamental Research Funds for the Central Universities, China (Grant No. DUT20LK30).

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References

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Cited By

图 1 (a) 外尔半金属Td-WTe₂单晶的晶体结构示意图; (b)机械剥离的WTe₂纳米片的光学显微镜照片; (c) 机械剥离的WTe₂纳米片的室温拉曼光谱图, 测量区域为图(b)中红色虚线框所示

Figure 1. (a) Schematic diagram of the crystal structure of Weyl semimetal Td-WTe₂ single crystal; (b) optical image of mechanically exfoliated WTe₂ flake; (c) room temperature Raman spectra of mechanically exfoliated WTe₂ flake, the measurement area is indicated by the red dashed box in panel (b).

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图 2 (a) WTe₂/Ti异质结的光学显微镜照片, 图中①—⑤代表具有不同WTe₂厚度的异质结区域; (b) AFM扫描图, 测量区域为图(a)中红色虚线框所示; (c)从AFM扫描图中沿着红色虚线的异质结台阶高度图

Figure 2. (a) Optical image of WTe₂/Ti heterostructures with different WTe₂ thickness denoted by ①–⑤; (b) AFM image of WTe₂/Ti heterostructure, the scanned area is denoted by the red dashed box in panel (a); (c) the height of one WTe₂/Ti step along the red dashed line in panel (b).

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图 3 室温下WTe₂ (12—32 nm)/Ti异质结的(a) 非偏振拉曼光谱图, (b) 垂直偏振拉曼光谱图, (c) 平行偏振拉曼光谱图. 图中数字代表不同的WTe₂厚度, “WTe₂”代表机械剥离的WTe₂单晶对照样品, 其厚度大于100 nm

Figure 3. (a) Unpolarized Raman spectra, (b) vertically polarized Raman spectra, and (c) parallel polarized Raman spectra of WTe₂ (12–32 nm)/Ti heterostructures at room temperature. The numbers in all figures represent WTe₂ thickness, “WTe₂” denotes the mechanically exfoliated WTe₂ single crystal with thickness larger than 100 nm.

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图 4 不同温度退火的WTe₂ (12—32 nm)/Ti异质结的室温拉曼光谱　(a) WTe₂ (12 nm)/Ti异质结分别在制备态和323—523 K退火后的非偏振拉曼光谱图; (b) WTe₂ (12 nm)/Ti异质结在473 K退火后界面反应生成Ti-Te化合物的非偏振拉曼光谱放大图; (c) WTe₂ (32 nm)/Ti异质结分别在制备态和 323—523 K退火后的非偏振拉曼光谱图; (d) WTe₂ (12, 18, 19, 20, 32 nm)/Ti异质结退火后界面生成Ti-Te的拉曼峰峰强随着退火温度的变化曲线

Figure 4. Room temperature Raman spectra of WTe₂ (12–32 nm)/Ti heterostructures annealed at different temperatures: (a) Unpolarized Raman spectra of WTe₂ (12 nm)/Ti heterostructure at as-grown state and annealed at 323-523 K, respectively; (b) enlarged unpolarized Raman spectra of Ti-Te interfacial reaction layer in WTe₂ (12 nm)/Ti heterostructure annealed at 473 K; (c) unpolarized Raman spectra of WTe₂ (32 nm)/Ti heterostructure at as-grown state and annealed at 323–523 K, respectively; (d) Raman intensity of the Ti-Te interfacial reaction layer in WTe₂ (12, 18, 19, 20, 32 nm)/Ti heterostructures as a function of the annealing temperature.

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图 5 (a) WTe₂/Ti (30 nm) 异质结的高分辨TEM图片, 样品在473 K退火30 min; (b) 放大的WTe₂/Ti界面高分辨TEM图片; (c) EDS元素分析图像; (d) 沿着图 (c) 中箭头方向的EDS线扫结果

Figure 5. (a) High-resolution TEM image of WTe₂/Ti (30 nm) heterostructure annealed at 473 K for 30 min; (b) enlarged high-resolution TEM image of WTe₂/Ti interface; (c) EDS mapping image; (d) EDS line scanning along the arrow direction in panel (c).

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map

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Thermal stability study of Weyl semimetal WTe₂/Ti heterostructures by Raman scattering

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Thermal stability study of Weyl semimetal WTe2/Ti heterostructures by Raman scattering

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Thermal stability study of Weyl semimetal WTe₂/Ti heterostructures by Raman scattering