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a-Si ∶H/SiO2 multiple quantum wells (QWs) are fabricated by plasma enhanced chemical vapor deposition (PECVD) and subsequent different thermal annealing. Among them the annealed sample under 1100 ℃ in vacuum can be transferred into nc-Si:H/SiO2 QWs, and the size of formed nc-Si:H is controllable and it matches the thickness of a-Si ∶H sublayer. The optical absorptivity of a-Si ∶H/SiO2 QWs is compared with that of a-Si ∶H under the same fabrication condition, the former is higher evidently in the UV/Visible spectrum with the absorption edge blue-shifted, which shows that a-Si ∶H/SiO2 QWs has an obvious quantum confinement effect. So it is feasible to use a-Si ∶H/SiO2 QWs to enhance the efficiency of silicon solar cells. In addition, the formation of nc-Si:H/SiO2 QWs with controllable size built the basis for new-type nanocrystalline silicon solar cells.
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Keywords:
- multiple quantum wells /
- quantum confinement effect /
- optical absorption /
- energy band structure
[1] Xia Z Y, Han P G, Wei D Y, Chen D Y, Xu J, Ma Z Y, Huang X F, Chen K J 2007 Acta Phys. Sin. 56 6991 (in Chinese) [夏正月、 韩培高、 韦德远、 陈德媛、 徐 骏、 马忠元、 黄信凡、 陈坤基 2007 56 6691]
[2] Liu N N, Sun J M, Pan S H, Chen Z H, Wang R P, Shi W S, Wang X G 2000 Acta Phys. Sin. 49 1019 (in Chinese) [刘宁宁、 孙甲明、 潘少华、 陈正豪、 王荣平、 师文生、 王晓光 2000 49 1019]
[3] Ma Z Y, Guo S H, Chen D Y, Wei D Y, Yao Y, Zhou J, Huang R, Li W, Xu J, Xu L, Huang X F, Chen K J, Feng D 2008 Chin. Phys. B 17 303
[4] Rolver R, Berghoff B, Batzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B 2008 Thin Solid Films 516 6763
[5] Xia J B, Cheah K W 1997 Phys. Rev. B 56 925
[6] Cheng B W, Yu Z, Wang Q M 1997 Chin. J. Lumi. 18 217 (in Chinese) [成步文、 余 钟、 于 卓、 王启明 1997 发光学报 18 217]
[7] Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403 (in Chinese) [刘艳松、 陈 铠、 乔 峰、 黄信凡、 韩培高、 钱 波、 马忠元、 李 伟、 徐 骏、 陈坤基 2006 55 5403]
[8] Kunihiko T, Noriko M, Masatoshi O, Hisao U 2008 Jpn. J. Appl. Phys. 47 598
[9] Novikov S V, Sinkkonen J, Kilpela O 1997 J. Cryst. Growth 175 514
[10] Wei Y, Dong C J, Xu M 2010 Sci. China Ser. G 40 55 (in Chinese) [魏 屹、 董成军、 徐 明 2010 中国科学G辑 40 55]
[11] Sakly A, Safta H, Mejri H 2008 J. Alloys Compd. 476 648
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[1] Xia Z Y, Han P G, Wei D Y, Chen D Y, Xu J, Ma Z Y, Huang X F, Chen K J 2007 Acta Phys. Sin. 56 6991 (in Chinese) [夏正月、 韩培高、 韦德远、 陈德媛、 徐 骏、 马忠元、 黄信凡、 陈坤基 2007 56 6691]
[2] Liu N N, Sun J M, Pan S H, Chen Z H, Wang R P, Shi W S, Wang X G 2000 Acta Phys. Sin. 49 1019 (in Chinese) [刘宁宁、 孙甲明、 潘少华、 陈正豪、 王荣平、 师文生、 王晓光 2000 49 1019]
[3] Ma Z Y, Guo S H, Chen D Y, Wei D Y, Yao Y, Zhou J, Huang R, Li W, Xu J, Xu L, Huang X F, Chen K J, Feng D 2008 Chin. Phys. B 17 303
[4] Rolver R, Berghoff B, Batzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B 2008 Thin Solid Films 516 6763
[5] Xia J B, Cheah K W 1997 Phys. Rev. B 56 925
[6] Cheng B W, Yu Z, Wang Q M 1997 Chin. J. Lumi. 18 217 (in Chinese) [成步文、 余 钟、 于 卓、 王启明 1997 发光学报 18 217]
[7] Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403 (in Chinese) [刘艳松、 陈 铠、 乔 峰、 黄信凡、 韩培高、 钱 波、 马忠元、 李 伟、 徐 骏、 陈坤基 2006 55 5403]
[8] Kunihiko T, Noriko M, Masatoshi O, Hisao U 2008 Jpn. J. Appl. Phys. 47 598
[9] Novikov S V, Sinkkonen J, Kilpela O 1997 J. Cryst. Growth 175 514
[10] Wei Y, Dong C J, Xu M 2010 Sci. China Ser. G 40 55 (in Chinese) [魏 屹、 董成军、 徐 明 2010 中国科学G辑 40 55]
[11] Sakly A, Safta H, Mejri H 2008 J. Alloys Compd. 476 648
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