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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang. Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica,
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Xu Chong, Niu Lian-Bin, Qian Ya-Cui, Wen Lin, Xiong Yuan-Qiang, Peng Hao-Nan, Guan Yun-Xia. Research on Fe(NH2trz)3·(BF4)2 doped polyfluorene organic light-emitting devices. Acta Physica Sinica,
2021, 70(7): 077202.
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Wang Dang-Hui, Xu Tian-Han. Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica,
2019, 68(12): 128104.
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Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi. Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica,
2019, 68(15): 158504.
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
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Chen Zhan-Xu, Wan Wei, He Ying-Ji, Chen Geng-Yan, Chen Yong-Zhu. Light-extraction enhancement of GaN-based LEDs by closely-packed nanospheres monolayer. Acta Physica Sinica,
2015, 64(14): 148502.
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
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Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun. Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica,
2014, 63(6): 068103.
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2012, 61(12): 127807.
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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica,
2010, 59(7): 4996-5001.
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Kan Peng-Zhi, Zhao Su-Ling, Xu Zheng, Kong Chao, Wang Da-Wei, Yan Yue. The applications of ZnO nanorods in poly [2-methoxy-5-(2-ethyl-hexyloxy)-1, 4-phenylene vinylene]solid state cathodoluminescence device. Acta Physica Sinica,
2010, 59(1): 616-619.
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
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Li Chun, Peng Jun-Biao, Zeng Wen-Jin. Organic red light-emitting diodes with a soluble luminescent compound and a novel TPBI/Ag cathode. Acta Physica Sinica,
2009, 58(3): 1992-1996.
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Kong Chao, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Huang Jin-Ying, Yan Guang, Li Jun-Ming. Solid state cathodoluminescence of poly (2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene vinylene in devices with Si3N4 as the electronic accelerating layer. Acta Physica Sinica,
2008, 57(12): 7891-7895.
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
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Li Yuan, Zhao Su-Ling, Xu Zheng, Zhang Fu-Jun, Huang Jin-Zhao, Song Lin, Ouyang Ping. Reseach on improving the electron injection in SSCL. Acta Physica Sinica,
2007, 56(9): 5526-5530.
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Suo Fan, Yu Jun-Sheng, Deng Jing, Jiang Ya-Dong, Wang Rui, Wang Wei-Zhi, Liu Tian-Xi. Electroluminescence characteristics of a blend system based on a novel fluorene-carbazole copolymer and PVK doping system. Acta Physica Sinica,
2007, 56(11): 6685-6690.
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2006, 55(3): 1424-1429.
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2006, 55(3): 1384-1389.
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