Structural and photoluminescence characteristics of ZnCdO/ZnO single quantum well

Yi You-Gen; Wang Yu-Ying; Hu Qi-Feng; Zhang Yan-Bin; Peng Yong-Yi; Lei Hong-Wen; Peng Li-Ping; Wang Xue-Min; Wu Wei-Dong

doi:10.7498/aps.65.057802

Abstract

Zn1-xCdxO/ZnO single quantum well is grown by laser molecular beam epitaxy on Al2O3(0001) substrate. Single quantum well samples respectively with the well-widths of 1.0 nm, 1.5 nm, 4 nm are obtained by controlling the epitaxial temperature and oxygen pressure in the vacuum chamber. The chemical compositions, surface morphologies, crystal structures of the samples are carefully studied, and the results show that the Zn0.98Cd0.02O single quantum wells are of high quality with very smooth surface (with the root mean square value of 0.6 nm in 20 μm×20 μm area) and good crystal structure. Quite a strong photoluminescence emission is obtained at 3.158-3.219 eV from the ZnCdO single quantum well at 4 K under a 325 nm He-Cd laser by tuning quantum well-width. The full width of half maximum of the photoluminescence emission peak of the 1.0 nm quantum well reaches 60 meV, which indicates a strong quantum confinement effect.

Keywords:

Authors and contacts

1.
Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, China;
2.
State Key Laboratory for High-Temperature and High-Density Plasmas Physics, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

Corresponding author: Peng Yong-Yi, yougenyi@csu.edu.cn

Funds: Project supported by the Foundation of the State Key Laboratory for High-Temperature and High-Density Plasmas Physics, China Academy of Engineering Physics (Grant No. 9140C680501110C6803) and the Fundamental Research Funds for the Central Universities, China (Grant No. ZY2015681).

References

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Cited By

[1]	Yamamoto K, Ohashi T, Tawara T 2008 Appl. Phys. Lett. 93 171913
[2]	Yamamoto K, Tsuboi T, Ohashi T 2010 J. Cryst. Growth 312 1703
[3]	Sadofev S, Blumstengel S, Cui J 2006 Appl. Phys. Lett. 89 201907
[4]	Chen J J, Ren F, Li Y J 2005 Appl. Phys. Lett. 87 192106
[5]	Lange M, Dietrich C P, Benndorf G 2011 J. Cryst. Growth 328 13
[6]	Jiang J, Zhu L P, He H P 2012 J. Appl. Phys. 112 083513
[7]	Venkatachalapathy V, Galeckas A, Trunk M 2011 Phys. Rev. B 83 125315
[8]	Lei H W, Yan D W, Zhang H 2014 Chin. Phys. B 23 126104
[9]	Feltrin A, Freundlich A 2007 J Cryst. Growth 301 38
[10]	Cheng C W, Liu B, Sie E J 2010 J. Phys. Chem. C 114 3863

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Vol. 65, Issue 5 - 2016-03-05

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