氧化锌锡作为电子传输层的量子点发光二极管

刘博智; 黎瑞锋; 宋凌云; 胡炼; 张兵坡; 陈勇跃; 吴剑钟; 毕刚; 王淼; 吴惠桢

doi:10.7498/aps.62.158504

摘要

本文研究了以胶状量子点作为发光层和有机/无机混合材料作为电子-空穴传输层的电致发光二极管器件. CdSe 量子点以薄膜的形式夹在无机氧化锌锡电子传输层和有机TPD空穴传输层中间构成三明治结构. 氧化锌锡电子传输层采用磁控溅射实现, 有机TPD空穴传输层和量子点发光层则采用旋涂的方法制备, 得到的QD-LEDs器件结构界面陡峭、表面平整. 光电特性表征结果显示器件的电致发光具有良好的单色性、低的开启电压, 利用具有高电子迁移率和低载流子浓度的无机氧化锌锡薄膜作为电子传输层可以实现器件在大气环境下稳定、明亮的电致发光. 本文分析了器件的工作机理并通过改变氧化锌锡的电导率达到控制器件中电子和空穴的注入比的目的, 优化了器件的光电性能.

关键词:

Abstract

We have investigated the light-emitting diodes based on colloidal CdSe quantum dots (QD-LEDs), in which inorganic ZnSnO thin films and organic TPD thin films were used as the electron-transporting layer (ETL) and hole-transporting layer (HTL), respectively. The quantum dots were embedded between the inorganic ETL and organic HTL to form a sandwich structure. ZnSnO ETL was made by magnetron sputtering, while the TPD and QD films were made by spin-coating method. The QD-LEDs display sharp interface and smooth morphology. Optical and electrical characterizations show that QD-LEDs have low turn-on voltage, good monochromaticity, bright electroluminescence and good stability in atmosphere ambient. These characteristics are attributed to the utility of high electron mobility and low carrier concentration of the ZnSnO films used as the ETL. To investigate the devices operation mechanism, the conductivity of ZnSnO was varied during deposition to realize equal injection rate for both electrons and holes, which allows the device to operate optimally.

Keywords:

作者及机构信息

1.
浙江大学物理学系, 杭州 310027;

2.
浙江大学城市学院, 杭州 310015

基金项目: 国家自然科学基金 (批准号: 91021020, 61275108)和浙江省自然科学基金 (批准号: Z610017, Z1110057)资助的课题.

Authors and contacts

1.
Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

2.
Zhejiang University City College, Hangzhou 310015, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 91021020, 61275108), and the Natural Science Foundation of Zhejiang Province, China (Grant Nos. Z610017, Z1110057)

参考文献

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施引文献

[1]	Achermann M, Petruska M A, Koleske D D, Crawford M H, Klimov V I 2006 Nano Lett. 6 1396
[2]	Kumar B, Hue R, Gladfelter W L, Campbell S A 2012 Journal of Applied Physics 112 034501
[3]	Colvin V L, Schlamp M C, Alivisatos A P 1994 Nature 370 354
[4]	Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photon 1 717
[5]	Caruge J M, Halpert J E, Wood V, Bulovi V, Bawendi M G 2008 Nat. Photon 2 247
[6]	Kwak J, Bae W K, Lee D, Park I, Lim J, Park M, Cho H, Woo H, Yoon D Y, Char K, Lee S, Lee C 2012 Nano Lett. 12 2362
[7]	Wang X, Cai X K, Yuan Z J, ZHU X M, Qiu D J, Wu H Z Acta Phys. Sin 60 37305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 37305]
[8]	Hu L, Wu H Z, Cai C F, Xu T N, Zhang B P, Jin S Q, Wan Z F, Wei X D 2012 The Journal of Physical Chemistry C 116 11283
[9]	Chen D A, Shen L, Zhang J Y, Cui Y P 2007 Acta Phys. Sin. 56 6340 (in Chinese) [陈定安, 沈里, 张家雨, 崔一平 2007 56 6340]
[10]	Du L X, Hu L, Zhang B P, Cai X K, Lou T G, Wu H Z 2011 Acta Phys. Sin. 60 117803 (in Chinese) [杜凌霄, 胡炼, 张兵坡, 才玺坤, 楼腾刚, 吴惠桢 2011 60 117803]
[11]	Lou T G, Hu L, Wu D K, Du L X, Cai C F, Si J X, Wu H Z 2012 J Inorg Mater 27 1211 (in Chinese) [楼腾刚, 胡炼, 杜凌霄, 蔡春锋, 斯剑宵, 吴惠桢 2012 无机材料学报 27 1211]
[12]	Empedocles S A, Bawendi M G 1997 Science 278 2114
[13]	Hikmet R A M, Talapin D V, Weller H 2003 Journal of Applied Physics 93 3509
[14]	Chin P T K, Hikmet R A M, Janssen R A J 2008 Journal of Applied Physics 104 013108
[15]	Coe-Sullivan S, Woo W K, Steckel J S, Bawendi M, Bulović V 2003 Organic Electronics 4 123
[16]	Anikeeva P O, Madigan C F, Halpert J E, Bawendi M G, Bulović V 2008 Phys. Rev. B 78 085434
[17]	Coe S, Woo W K, Bawendi M, Bulovic V 2002 Nature 420 800
[18]	Anikeeva P O, Halpert J E, Bawendi M G, Bulović V 2009 Nano Lett. 9 2532
[19]	Cho K S, Lee E K, Joo W J, Jang E, Kim T H, Lee S J, Kwon S J, Han J Y, Kim B K, Choi B L, Kim J M 2009 Nat Photon 3 341
[20]	Ginger D S, Greenham N C 2000 Journal of Applied Physics 87 1361
[21]	Wehrenberg B L, Guyot-Sionnest P 2003 Journal of the American Chemical Society 125 7806
[22]	Shaheen S E, Kippelen B, Peyghambarian N, Wang J F, Anderson J D, Mash E A, Lee P A, Armstrong N R, Kawabe Y 1999 Journal of Applied Physics 85 7939
[23]	Huang H, Dorn A, Nair G P, Bulovi V, Bawendi M G 2007 Nano Lett. 7 3781
[24]	Klimov V I, Mikhailovsky A A, McBranch D W, Leatherdale C A, Bawendi M G 2000 Science 287 1011
[25]	Mei J, Bradley M S, Bulovi V 2009 Phys. Rev. B 79 235205
[26]	Wood V, Panzer M J, Halpert J E, Caruge J M, Bawendi M G, Bulović V 2009 ACS Nano 3 3581

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