Influence of well structure on efficiency of organic light-emitting diodes

Zhu Hai-Na; Xu Zheng; Zhao Su-Ling; Zhang Fu-Jun; Kong Chao; Yan Guang; Gong Wei

doi:10.7498/aps.59.8093

Abstract

Five kinds of organic quantum well structured light-emitting devices are fabricated, and their electrical characteristics are studied. The effects of quantum well period number and barrier thickness on device performance are analyzed. Experimental results show that appropriate cycle quantum well structured devices have higher brightness and current efficiency than the traditional three-layer devices. That is because of the limitation effect of quantum well structure on electrons and holes,and the structure of this kind could improve the composite probability of excitons in the light-emitting layer,thereby increasing brightness and efficiency of OLED. There is also an effect on brightness and efficiency when the potential well layer thickness of quantum well structured device is changed. Consequently,the adoption of appropriate potential well layer thickness can also improve the brightness and the efficiency of the device.

Keywords:

Authors and contacts

1.
Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China

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Cited By

[1]	Lin C F,Su Y S,Wu C H 2004 Jpn. J. Appl. Phys. 43 7032
[2]	Nikiforov A Y,Cargill III G S,Guo S P,Tamargo M C 2008 J. Appl. Phys. 104 114506
[3]	So F F,Forrest S R,Shi Y Q,Steier W H 1990 Appl. Phys. Lett. 56 674
[4]	So F F,Forrest S R 1991 Phys. Rev. Lett. 66 2649
[5]	Fujita S,Nakazawa T,Asano M,Fujita S 2000 Jpn. J. Appl. Phys. 39 5301
[6]	Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 63 1871
[7]	Ohmori Y,Fujii A,Uchida M,Morishima C,Yoshino K 1993 Appl. Phys. Lett. 62 3250
[8]	An H Y,Hou J Y,Chen B J,Shen J C,Liu S Y 1998 Thin Solid Films 326 201
[9]	Xie ZY,Huang J S,Li C N,Liu S Y,Wang Y,Shen J C,Wang Y,Li YQ,Shen J C 1999 Appl. Phys. Lett. 74 641
[10]	Zhao D W,Song S F,Zhang F J,Zhao S L,Xu C,Xu Z 2007 Displays 28 81
[11]	Zhao D W,Song S F,Zhao S L,Zhang F J,Xu Z,Xu X R 2007 J. Phys. D:Appl. Phys. 40 1915
[12]	Yang K X,Gao W B,Liu H Y,Li C N,Zhao Y,Liu S Y,Huang J S. 2001 Chin. Phys. Lett. 18 1658
[13]	Song S F,Zhao D W,Xu Z,Xu X R 2007 Acta Phys. Sin. 56 3499 (in Chinense) [宋淑芳、赵德威、徐征、徐叙瑢 2007 56 3499]
[14]	Qiu Y,Gao Y D,Wei P,Wang L D 2002 Appl. Phys. Lett. 80 2628
[15]	Qiu Y,Gao Y D,Wang L D,Wei P,Duan L,Zhang D Q,Dong G F 2002 Appl. Phys. Lett. 81 3540
[16]	Yang S H,Hong B C,Huang S F 2009 J. Appl. Phys. 105 113105

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Catalog

Vol. 59, Issue 11 - 2010-06-05

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