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We have investigated the light-emitting diodes based on colloidal CdSe quantum dots (QD-LEDs), in which inorganic ZnSnO thin films and organic TPD thin films were used as the electron-transporting layer (ETL) and hole-transporting layer (HTL), respectively. The quantum dots were embedded between the inorganic ETL and organic HTL to form a sandwich structure. ZnSnO ETL was made by magnetron sputtering, while the TPD and QD films were made by spin-coating method. The QD-LEDs display sharp interface and smooth morphology. Optical and electrical characterizations show that QD-LEDs have low turn-on voltage, good monochromaticity, bright electroluminescence and good stability in atmosphere ambient. These characteristics are attributed to the utility of high electron mobility and low carrier concentration of the ZnSnO films used as the ETL. To investigate the devices operation mechanism, the conductivity of ZnSnO was varied during deposition to realize equal injection rate for both electrons and holes, which allows the device to operate optimally.
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Keywords:
- quantum dots /
- ZnSnO /
- electroluminescence /
- electron-transporting layer
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[1] Achermann M, Petruska M A, Koleske D D, Crawford M H, Klimov V I 2006 Nano Lett. 6 1396
[2] Kumar B, Hue R, Gladfelter W L, Campbell S A 2012 Journal of Applied Physics 112 034501
[3] Colvin V L, Schlamp M C, Alivisatos A P 1994 Nature 370 354
[4] Sun Q J, Wang Y A, Li L S, Wang D Y, Zhu T, Xu J, Yang C H, Li Y F 2007 Nat. Photon 1 717
[5] Caruge J M, Halpert J E, Wood V, Bulovi V, Bawendi M G 2008 Nat. Photon 2 247
[6] Kwak J, Bae W K, Lee D, Park I, Lim J, Park M, Cho H, Woo H, Yoon D Y, Char K, Lee S, Lee C 2012 Nano Lett. 12 2362
[7] Wang X, Cai X K, Yuan Z J, ZHU X M, Qiu D J, Wu H Z Acta Phys. Sin 60 37305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 60 37305]
[8] Hu L, Wu H Z, Cai C F, Xu T N, Zhang B P, Jin S Q, Wan Z F, Wei X D 2012 The Journal of Physical Chemistry C 116 11283
[9] Chen D A, Shen L, Zhang J Y, Cui Y P 2007 Acta Phys. Sin. 56 6340 (in Chinese) [陈定安, 沈里, 张家雨, 崔一平 2007 56 6340]
[10] Du L X, Hu L, Zhang B P, Cai X K, Lou T G, Wu H Z 2011 Acta Phys. Sin. 60 117803 (in Chinese) [杜凌霄, 胡炼, 张兵坡, 才玺坤, 楼腾刚, 吴惠桢 2011 60 117803]
[11] Lou T G, Hu L, Wu D K, Du L X, Cai C F, Si J X, Wu H Z 2012 J Inorg Mater 27 1211 (in Chinese) [楼腾刚, 胡炼, 杜凌霄, 蔡春锋, 斯剑宵, 吴惠桢 2012 无机材料学报 27 1211]
[12] Empedocles S A, Bawendi M G 1997 Science 278 2114
[13] Hikmet R A M, Talapin D V, Weller H 2003 Journal of Applied Physics 93 3509
[14] Chin P T K, Hikmet R A M, Janssen R A J 2008 Journal of Applied Physics 104 013108
[15] Coe-Sullivan S, Woo W K, Steckel J S, Bawendi M, Bulović V 2003 Organic Electronics 4 123
[16] Anikeeva P O, Madigan C F, Halpert J E, Bawendi M G, Bulović V 2008 Phys. Rev. B 78 085434
[17] Coe S, Woo W K, Bawendi M, Bulovic V 2002 Nature 420 800
[18] Anikeeva P O, Halpert J E, Bawendi M G, Bulović V 2009 Nano Lett. 9 2532
[19] Cho K S, Lee E K, Joo W J, Jang E, Kim T H, Lee S J, Kwon S J, Han J Y, Kim B K, Choi B L, Kim J M 2009 Nat Photon 3 341
[20] Ginger D S, Greenham N C 2000 Journal of Applied Physics 87 1361
[21] Wehrenberg B L, Guyot-Sionnest P 2003 Journal of the American Chemical Society 125 7806
[22] Shaheen S E, Kippelen B, Peyghambarian N, Wang J F, Anderson J D, Mash E A, Lee P A, Armstrong N R, Kawabe Y 1999 Journal of Applied Physics 85 7939
[23] Huang H, Dorn A, Nair G P, Bulovi V, Bawendi M G 2007 Nano Lett. 7 3781
[24] Klimov V I, Mikhailovsky A A, McBranch D W, Leatherdale C A, Bawendi M G 2000 Science 287 1011
[25] Mei J, Bradley M S, Bulovi V 2009 Phys. Rev. B 79 235205
[26] Wood V, Panzer M J, Halpert J E, Caruge J M, Bawendi M G, Bulović V 2009 ACS Nano 3 3581
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