高能电子照射绝缘样品的泄漏电流特性

李维勤; 刘丁; 张海波

doi:10.7498/aps.63.227303

摘要

建立了考虑电子散射、输运、俘获和自洽场的数值计算模型, 研究了高能电子束照射下绝缘厚样品的泄漏电流特性, 并采用一个实验平台测量了泄漏电流. 结果表明: 在电子束持续照射下, 电子总产额会下降; 由于电子在样品内部的输运, 样品近表面呈现微弱的正带电, 在样品内部呈现较强的负带电; 样品内部电子会向下输运形成电子束感生电流, 长时间照射下会形成泄漏电流; 随着照射, 泄漏电流逐渐增大并趋于稳定值; 泄漏电流随样品厚度的增大而减小, 随电子束能量、电子束电流的增大而增大.

关键词:

Abstract

The leakage current characteristics of an insulating sample under high-energy electron beam irradiation are simulated by a numerical model with taking into account the electron scattering, transport, trapping and self-consistent field.The leakage current is measured by using a detection platform. Results show that under the continuous electron beam irradiation, the total electron yield decreases evidently; because of electron transport, the sample near the surface is positively charged weakly and its interior is negatively charged strongly; some electrons are transported downward, forming the electron beam induced current and the leakage current under the long time irradiation. Under the irradiation, the leakage current increases to a stable level gradually. The leakage current decreases with the increase of sample thickness, but it increases with beam energy and current.

Keywords:

作者及机构信息

1.
西安理工大学自动化与信息工程学院, 西安 710048;

2.
西安交通大学电子科学与技术系, 电子物理与器件教育部重点实验室, 西安 710049

基金项目: 国家自然科学基金(批准号:11175140)和陕西省自然科学基金项目(批准号:2013JM8001)资助的课题.

Authors and contacts

1.
School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;

2.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11175140), and the Scientific Research Program Funded by Shaanxi Province, China (Grant No. 2013JM8001).

参考文献

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[2]	Joo J, Chow B Y, Jacobson J M 2006 Nano Lett. 6 2021
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[7]	O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57
[8]	Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[9]	Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303
[10]	Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11]	Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110
[12]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[13]	Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253
[14]	Li W Q, Zhang H B 2010 Micron 41 416
[15]	Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[16]	Rau E I 2008 Appl. Surf. Sci. 254 2110
[17]	Li W Q, Mu K, Xia R H 2011 Micron 42 443
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[19]	Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
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[21]	Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
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[23]	Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[24]	Desalvot A, Rosa R 1987 J. Phys. D 20 790
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施引文献

[1]	Abe H, Babin S, Borisov S, Hamaguchi A, Kadowaki M, Miyano Y, Yamazaki Y 2009 J. Vac. Sci. Technol. B 27 1039
[2]	Joo J, Chow B Y, Jacobson J M 2006 Nano Lett. 6 2021
[3]	Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielect. Elect. El. In. 16 682
[4]	Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 59 2907]
[5]	Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 58 684]
[6]	Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielect. El. In. 11 192
[7]	O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57
[8]	Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[9]	Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303
[10]	Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11]	Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110
[12]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[13]	Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253
[14]	Li W Q, Zhang H B 2010 Micron 41 416
[15]	Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[16]	Rau E I 2008 Appl. Surf. Sci. 254 2110
[17]	Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18]	Wang C H, Li W Q, Zhang H B 2014 Acta Electr. Sin. 42 144 (in Chinese) [汪春华, 李维勤, 张海波 2014 电子学报 42 144]
[19]	Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
[20]	Joy D C 1995 Monte-Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press)
[21]	Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[22]	Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[23]	Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[24]	Desalvot A, Rosa R 1987 J. Phys. D 20 790
[25]	Penn D R 1987 Phys. Rev. B 35 482
[26]	Dapor M, Calliari L, Filippi M 2008 Surf. Interf. Anal. 40 683
[27]	Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110

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