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The leakage current characteristics of an insulating sample under high-energy electron beam irradiation are simulated by a numerical model with taking into account the electron scattering, transport, trapping and self-consistent field.The leakage current is measured by using a detection platform. Results show that under the continuous electron beam irradiation, the total electron yield decreases evidently; because of electron transport, the sample near the surface is positively charged weakly and its interior is negatively charged strongly; some electrons are transported downward, forming the electron beam induced current and the leakage current under the long time irradiation. Under the irradiation, the leakage current increases to a stable level gradually. The leakage current decreases with the increase of sample thickness, but it increases with beam energy and current.
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Keywords:
- insulating sample /
- leakage current /
- electron yield /
- numerical simulation
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[7] O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57
[8] Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[9] Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303
[10] Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11] Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110
[12] Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[13] Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253
[14] Li W Q, Zhang H B 2010 Micron 41 416
[15] Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[16] Rau E I 2008 Appl. Surf. Sci. 254 2110
[17] Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18] Wang C H, Li W Q, Zhang H B 2014 Acta Electr. Sin. 42 144 (in Chinese) [汪春华, 李维勤, 张海波 2014 电子学报 42 144]
[19] Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
[20] Joy D C 1995 Monte-Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press)
[21] Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[22] Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[23] Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[24] Desalvot A, Rosa R 1987 J. Phys. D 20 790
[25] Penn D R 1987 Phys. Rev. B 35 482
[26] Dapor M, Calliari L, Filippi M 2008 Surf. Interf. Anal. 40 683
[27] Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
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[1] Abe H, Babin S, Borisov S, Hamaguchi A, Kadowaki M, Miyano Y, Yamazaki Y 2009 J. Vac. Sci. Technol. B 27 1039
[2] Joo J, Chow B Y, Jacobson J M 2006 Nano Lett. 6 2021
[3] Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielect. Elect. El. In. 16 682
[4] Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese) [黄建国, 韩建伟 2010 59 2907]
[5] Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 58 684]
[6] Sessler G M, Figueiredo M T, Ferreira G F L 2004 IEEE Trans. Dielect. El. In. 11 192
[7] O'Shea A, Wallace J, Hummel M Strauss L H, Kidd T E 2013 Micron 52-53 57
[8] Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[9] Zhang X, Liu B W, Zhao Y, Li C B, Xia Y 2013 Chin. Phys. B 22 127303
[10] Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11] Cornet N, Goeuriot D 2008 J. Appl. Phys. 103 064110
[12] Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[13] Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253
[14] Li W Q, Zhang H B 2010 Micron 41 416
[15] Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[16] Rau E I 2008 Appl. Surf. Sci. 254 2110
[17] Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18] Wang C H, Li W Q, Zhang H B 2014 Acta Electr. Sin. 42 144 (in Chinese) [汪春华, 李维勤, 张海波 2014 电子学报 42 144]
[19] Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
[20] Joy D C 1995 Monte-Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press)
[21] Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[22] Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[23] Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[24] Desalvot A, Rosa R 1987 J. Phys. D 20 790
[25] Penn D R 1987 Phys. Rev. B 35 482
[26] Dapor M, Calliari L, Filippi M 2008 Surf. Interf. Anal. 40 683
[27] Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
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