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In accordance with the character of diffusing Ga and Al in SiO2/Si system and in the use of magnetic-control device for controlling accurately the doping quantity of Ga, the double-impurity doping of both Ga and Al is completed consecutively in the same high-temperature diffusion furnace. It is shown that the doping is with good uniformity，repeatability and continuity．A uniform distribution of impurity concentration can be achieved．Since the covalent radiuses of the atoms，Ga and Al，are close to that of Si，and the temperature is slowly dropped after the high temperature, the defects of the lattice is obviously reduced．The lifetime of minority carrier is significantly increases and the voltage drop is reduced．In this paper, the mechanism of enhancing the performances of thyristors by Ga-A1 doping is investigated．Our result shows that the double-impurity doping technique is conducive to raising the level of breakdown voltage and surge capacity，and improving the characteristics of current，triggering and dynamics significantly．The double-impurity doping technique is better than other known techniques of doping．
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Keywords:
- Ga-Al double-impurity doping /
- mechanism /
- thyristor /
- quality
[1] ［1］Wang C L,Gao Y,Ma L,Zhang C L,Kim E D,Kim SC 2005 Acta Phys. Sin. 54 2296 （in Chinese）［王彩琳、 高勇、 马丽、 张昌利、 金垠东、 金相喆 2005 54 2296］
[2] ［2］Liu X X, Sun Y 1995 Chinese Journa1 of Semiconductors 16 235 （in Chinese）［刘秀喜、 孙瑛 1995 半导体学报 16 235］
[3] ［3］Liu X X, Sun Y, Li Y G 2004 Chinese Journa1 of Semiconductors 25 110 （in Chinese）［刘秀喜、 孙瑛、 李玉国 2004 半导体学报 25 112］
[4] ［4］Guo D Y, Waag Y B, Yu J, Gao J X, Li M Y 2006 Acta Phys. Sin. 55 5551 （in Chinese）［郭冬云、 王耘波、 丁军、 高俊雄、 李美亚 2006 55 5551］
[5] ［5］Lu X, Wu C G, Zhang W L, Li Y R 2006 Acta Phys. Sin. 55 2513 （in Chinese）［卢肖、 吴传贵、 张万里、 李言荣 2006 55 2513］
[6] ［6］Zhang Y K, Kong D J, Feng A X, Lu J Z, Ge T 2006 Acta Phys. Sin. 55 6008 （in Chinese）［张永康、 孔德军、 冯爱新、 鲁金忠、 葛涛 2006 55 6008］
[7] ［7］Xu C X 1987 Endurance and surface Insulated Technology of High Voltage silicon Semiconductor Device．（Beijing: Mechanical Industry Prese） p85 （in Chinese）［徐传骧 1987 高压硅半导体器件耐压与表面绝缘技术 （北京：机械工业出版社） 第85页］
[8] ［8］Momma N, Taniguchi H, Ura M, Ogwa T 1978 J. Electrochem. Soc. 125 963
[9] ［9］Pei S H, Zhao F X, Liu XX 1988 Dianli Dianzi Jishu 3 45 （in Chinese）［裴素华、 赵富贤、 刘秀喜 1988 电力电子技术3 45］
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[1] ［1］Wang C L,Gao Y,Ma L,Zhang C L,Kim E D,Kim SC 2005 Acta Phys. Sin. 54 2296 （in Chinese）［王彩琳、 高勇、 马丽、 张昌利、 金垠东、 金相喆 2005 54 2296］
[2] ［2］Liu X X, Sun Y 1995 Chinese Journa1 of Semiconductors 16 235 （in Chinese）［刘秀喜、 孙瑛 1995 半导体学报 16 235］
[3] ［3］Liu X X, Sun Y, Li Y G 2004 Chinese Journa1 of Semiconductors 25 110 （in Chinese）［刘秀喜、 孙瑛、 李玉国 2004 半导体学报 25 112］
[4] ［4］Guo D Y, Waag Y B, Yu J, Gao J X, Li M Y 2006 Acta Phys. Sin. 55 5551 （in Chinese）［郭冬云、 王耘波、 丁军、 高俊雄、 李美亚 2006 55 5551］
[5] ［5］Lu X, Wu C G, Zhang W L, Li Y R 2006 Acta Phys. Sin. 55 2513 （in Chinese）［卢肖、 吴传贵、 张万里、 李言荣 2006 55 2513］
[6] ［6］Zhang Y K, Kong D J, Feng A X, Lu J Z, Ge T 2006 Acta Phys. Sin. 55 6008 （in Chinese）［张永康、 孔德军、 冯爱新、 鲁金忠、 葛涛 2006 55 6008］
[7] ［7］Xu C X 1987 Endurance and surface Insulated Technology of High Voltage silicon Semiconductor Device．（Beijing: Mechanical Industry Prese） p85 （in Chinese）［徐传骧 1987 高压硅半导体器件耐压与表面绝缘技术 （北京：机械工业出版社） 第85页］
[8] ［8］Momma N, Taniguchi H, Ura M, Ogwa T 1978 J. Electrochem. Soc. 125 963
[9] ［9］Pei S H, Zhao F X, Liu XX 1988 Dianli Dianzi Jishu 3 45 （in Chinese）［裴素华、 赵富贤、 刘秀喜 1988 电力电子技术3 45］
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