Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress

Jing Bin; Xu Meng; Peng Cong; Chen Long-Long; Zhang Jian-Hua; Li Xi-Feng

doi:10.7498/aps.71.20220154

Abstract

In this paper, we fabricate a back channel etched structure thin film transistor (TFT) pixel array with hafnium-aluminum oxide dielectric and indium-zinc-tin-oxide (IZTO) semiconductor using a solution process. The electrical characteristics of IZTO TFT are modified by N₂O plasma treatment. In comparison with the subthreshold swing and saturation mobility of the device untreated by plasma , the subthreshold swing decreases from 204 to 137 mV·dec^–1, and the saturation mobility increases from 29.12 to 51.52 cm²·V^–1·s^–1. Improvement in the mobility and the subthreshold swing (SS) demonstrate that interface states may be passivated by reactive O radicals that are generated by N₂O plasma, which is confirmed by the result of X-ray photoelectron spectrum analysis. In addition, the stability of negative bias illumination stress (NBIS) shift is only 0.1V for 3600 s with an illumination intensity of 10000 lux. This result indicates that its superior stability meets the requirements for the display driver. Therefore, N₂O plasma treatment is verified to be an effective method to improve device performance and light stability for IZTO TFT pixel array.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
2.
Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China

Corresponding author: Li Xi-Feng, lixifeng@shu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62174105, 61674101), the Program of Academic/Technology Research Leader of Shanghai, China (Grant No. 18XD1424400), the Shanghai Education Development Foundation and Shanghai Municipal Education Commission, CHina (Grant No. 18SG38).

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References

[1]	Saito N, Ueda T, Tezuka T, Ikeda K 2018 IEEE J. Electron Devices Soc. 6 1253 Google Scholar
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Cited By

图 1 IZTO TFT　(a) 器件截面示意图; (b) 像素阵列10倍显微镜图像(插图为50倍)

Figure 1. (a) Schematic cross section of an IZTO TFT; (b) microscope images of the IZTO TFTs array with magnification 10 times (Inset shows 50 times).

DownLoad: Full-Size Img PowerPoint

图 2 IZTO薄膜AFM图　(a) 无处理; (b) N₂O等离子体处理

Figure 2. AFM images of the IZTO film: (a) without N₂O plasma treatment ; (b) with N₂O plasma treatment.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 有无N₂O等离子体处理的IZTO TFT转移曲线; (b) 无处理的IZTO TFT输出曲线; (c) N₂O等离子处理的IZTO TFT输出曲线

Figure 3. (a) Transfer characteristics of an IZTO TFT without and with N₂O plasma treatment; output characteristics of an IZTO TFT (b) without and (c) with N₂O plasma treatment.

DownLoad: Full-Size Img PowerPoint

图 4 IZTO薄膜O 1s XPS图谱　(a) 无处理; (b) N₂O等离子体处理

Figure 4. XPS of O 1s spectra on the surface of IZTO film (a) without and (b) with N₂O plasma treatment.

DownLoad: Full-Size Img PowerPoint

图 5 IZTO TFT的PBIS和NBIS稳定性　(a) 和(b) 为无处理, (c) 和(d) 为N₂O等离子体处理; (e) 阈值电压随偏压时间的变化; (f) N₂O等离子体处理后IZTO TFT的能带图示意图

Figure 5. Stability for IZTO TFT: Stability of (a) untreated and (c) treated PBIS; stability of (b) untreated and (d) treated NBIS; (e) plots of voltage shift versus time; (f) band diagram of IZTO TFT with N₂O plasma treatment.

DownLoad: Full-Size Img PowerPoint

图 6 IZTO薄膜的原子模型　(a) 无处理; (b) N₂O等离子处理

Figure 6. Atomic model of the IZTO film (a) without and (b) with N₂O plasma treatment.

DownLoad: Full-Size Img PowerPoint

图 7 阵列中各个位置器件负偏压光照稳定性分布　(a) 左上; (b)右上; (c) 中间; (d)左下; (e) 右下; (f) 阵列整体负偏压光照稳定性

Figure 7. Illumination stability distribution of devices under negative bias in the array: (a) Top-left; (b) top-right; (c) middle; (d) bottom-left; (e) bottom-right; (f) the negative bias illumination stress stability of the array.

DownLoad: Full-Size Img PowerPoint

图 8 20个器件迁移率和亚阈值摆幅分布　(a), (b) N₂O等离子体处理; (c), (d) 无处理

Figure 8. Histogram of threshold voltage and mobility for the IZTO TFTs: (a) , (b) With N₂O plasma treatment; (c), (d) without N₂O plasma treatment. The data are collected from 20 TFTs.

DownLoad: Full-Size Img PowerPoint

表 1 有无N₂O等离子体处理的IZTO TFT性能对比

Table 1. Device performance comparison of IZTO TFT without and with N₂O plasma treatment.

阈值
电压/
V 迁移率/

(cm²·V^–1·s^–1) 亚阈值摆幅/

(mV·dec^–1) 开关比

Untreated –0.5 29.12 204 1.1×10⁷
Treated 0.1 51.52 137 2.3×10⁷

DownLoad: CSV

map

[1]	Saito N, Ueda T, Tezuka T, Ikeda K 2018 IEEE J. Electron Devices Soc. 6 1253 Google Scholar
[2]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488 Google Scholar
[3]	Kim J, Park J, Yoon G, Khushabu A, Kim J S, Pae S, Cho E C, Yi J 2020 Mater. Sci. Semicond. Process. 120 105264 Google Scholar
[4]	Karteri İ, Karataş Ş, Al-Ghamdi A A, Yakuphanoğlu F 2015 Synth. Met. 199 241 Google Scholar
[5]	Liu X Q, Wang J L, Liao C N, Xiao X H, Guo S S, Jiang C Z, Fan Z Y, Wang T, Chen X S, Lu W, Hu W D, Liao L 2014 Adv. Mater. 26 7399 Google Scholar
[6]	Liu L C, Chen J S, Jeng J S 2014 Appl. Phys. Lett. 105 023509 Google Scholar
[7]	Kim M, Jeong J H, Lee H J, Ahn T K, Shin H S, Park J S, Jeong J K, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 90 212114 Google Scholar
[8]	Xu H, Lan L, Xu M, Zou J, Wang L, Wang D, Peng J 2011 Appl. Phys. Lett. 99 253501 Google Scholar
[9]	Xu Y L, Li X F, Zhu L Y, Zhang J H 2016 Mater. Sci. Semicond. Process. 46 23 Google Scholar
[10]	Cho S H, Ko J B, Ryu M K, Yang J H, Yeom H I, Lim S K, Hwang C S, Park S H K 2015 IEEE Trans. Electron Devices 62 3653 Google Scholar
[11]	Yang J H, Choi J H, Cho S H, Pi J E, Kim H O, Hwang C S, Park K, Yoo S 2018 IEEE Electron Device Lett. 39 508 Google Scholar
[12]	Zhao M J, Zhang Z W, Xu Y C, Xu D S, Zhang J Y, Huang Z C 2020 Phys. Status Solidi A 217 1900773 Google Scholar
[13]	Li Z Y, Yang H Z, Chen S C, Lu Y B, Xin Y Q, Yang T L, Sun H 2018 J. Phys. D:Appl. Phys. 51 175101 Google Scholar
[14]	Cathleen A H, Gaillard J F, Kenneth R P 2010 J. Solid State Chem. 183 761 Google Scholar
[15]	Jeong J K, Jeong J H, Yang H W, Park J S, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 91 113505 Google Scholar
[16]	Chong E, Jo K C, Lee S Y 2010 Appl. Phys. Lett. 96 152102 Google Scholar
[17]	Ye Z Z, Yue S L, Zhang J, Li X F, Chen L X, Lu J G 2016 IEEE Trans. Electron Devices 63 3547 Google Scholar
[18]	Jhu J C, Chang T C, Chang G W, Tai Y H, Tsai W W, Chiang W J, Yan J Y 2013 J. Appl. Phys. 114 204501 Google Scholar
[19]	Lu R K, Lu J G, Wei X S, Yue S L, Li S Q, Lu B J, Zhao Y, Zhu L P, Chen L X, Ye Z Z 2020 Adv. Electron. Mater. 6 2000233 Google Scholar
[20]	Umeda K, Miyasako T, Sugiyama A, Tanaka A, Suzuki M, Tokumitsu E, Shimoda T 2013 J. Appl. Phys. 113 184509 Google Scholar
[21]	Hsieh T Y, Chang T C, Chen T C, Tsai M Y, Lu W H, Chen S C, Jian F Y, Lin C S 2011 Thin Solid Films 520 1427 Google Scholar
[22]	Pan C C, Yang S B, Chen L L, Shi J F, Sun X, Li X F, Zhang J H 2020 IEEE J. Electron Devices Soc. 8 524 Google Scholar
[23]	Xu W X, Hu L Y, Zhao C, Zhang L J, Zhu D L, Cao P J, Liu W J, Han S, Liu X K, Jia F, Zeng Y X, Lu Y M 2018 Appl. Surf. Sci. 455 554 Google Scholar
[24]	Mude N N, Bukke R N, Saha J K, Avis C, Jang J 2019 Adv. Electron. Mater. 5 1900768 Google Scholar
[25]	Zhang Q, Xia G D, Li L B, Xia W W, Gong H Y, Wang S M 2019 Curr. Appl. Phys. 19 174 Google Scholar
[26]	Hsu C C, Chou C H, Chen Y T, Jhang W C 2019 IEEE Trans. Electron Devices 66 2631 Google Scholar
[27]	Lee C G, Dodabalapur A 2012 J. Electron. Mater. 41 895 Google Scholar
[28]	Ohara H, Sasaki T, Noda K, Ito S, Sasaki M, Endo Y, Yoshitomi S, Sakata J, Serikawa T, Yamazaki S 2010 Jpn. J. Appl. Phys. 49 03cd02 Google Scholar
[29]	Park J, Kim S, Kim C, Kim S, Song I, Yin H, Kim K K, Lee S, Hong K, Lee J, Jung J, Lee E, Kwon K W, Park Y 2008 Appl. Phys. Lett. 93 053505 Google Scholar
[30]	Bukke R N, Avis C, Jang J 2016 IEEE Electron Device Lett. 37 433 Google Scholar
[31]	Biswas P K, De A, Dua L K, Chkoda L 2006 Indian Acad. Sci. 29 323 Google Scholar
[32]	Chen T C, Chang T C, Hsieh T Y, Tsai C T, Chen S C, Lin C S, Jian F Y, Tsai M Y 2011 Thin Solid Films 520 1422 Google Scholar
[33]	Chowdhury H M D, Migliorato P, Jang J 2013 Appl. Phys. Lett. 102 143506 Google Scholar

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