不同极性6H-SiC表面石墨烯的制备及其电子结构的研究

康朝阳; 唐军; 李利民; 潘海斌; 闫文盛; 徐彭寿; 韦世强; 陈秀芳; 徐现刚

doi:10.7498/aps.60.047302

摘要

在超高真空设备中,采用高温退火的方法在6H-SiC两个极性面(0001)和(000 1 - )面(即Si面和C面)外延石墨烯(EG). 利用低能电子衍射(LEED)和同步辐射光电子能谱(SRPES)对样品的生长过程进行了原位研究,而后利用激光拉曼光谱(Raman)和近边X射线吸收精细结构(XANES)等实验技术对制备的样品进行了表征. 结果表明我们在两种极性面均制备出了质量较好的石墨烯样品. 而有关两种石墨烯的对比性研究发现:Si面EG呈同一取向而C面EG呈各向异性;Si面EG与衬底存在类似

关键词:

石墨烯 /
6H-SiC /
同步辐射 /
电子结构

Abstract

The epitaxial graphene (EG) layers are grown on Si-terminated 6H-SiC (0001) substrates and C-terminated 6H-SiC (000 1 - ) substrates separately by thermal annealing in an ultrahigh vacuum chamber. Low energy electron diffraction(LEED) and synchrotron radiation photoelectron spectroscopy(SRPES) are used to in-situ study the synthesis process, and the prepared samples are characterized by Raman spectrum, and near edge X-ray absorption fine structure(XANEX). The results show that we have successfully prepared high-quality EG layers on the two polar surfaces of 6H-SiC. The comparisons studies indicate that Si terminated EG is highly oriented while C terminated EG is anisotropic, and that the interface interaction similar to that of C-sp3 bond of diamond exists on the Si terminated EG, the interaction between the epitaxial film and substrate is stronger, while on the C terminated EG there is no such interaction, and the interaction between the epitaxial film and substrate is weaker.

Keywords:

作者及机构信息

(1)山东大学晶体材料国家重点实验室,济南 250100; (2)中国科学技术大学国家同步辐射实验室,合肥 230029

基金项目: 国家自然科学基金(批准号: 50872128,50802053)资助的课题.

Authors and contacts

(1)National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China; (2)State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

参考文献

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施引文献

[1]	Novoselov K S, Geim A K, Firsov A A 2004 Science 306 666
[2]	Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P, Geim A K 2007 Science 315 1379
[3]	Service R F 2009 Science 324 875
[4]	Balandin A A, Ghosh S, Bao W Z, Calizo I, Teweldebrhan D, Miao F, Lau C N 2008 Nano Lett. 8 902
[5]	Lee C G, Wei X D, Kysar J W, Hone J 2008 Science 2008 321 385
[6]	Wang Y, Huang Y, Song Y, Zhang X Y, Ma Y F, Liang J J, Chen Y S 2009 Nano. Lett. 9 220
[7]	Sun J T, Du S X, Xiao W D, Hu H, Zhang Y Y, Li G, Gao H J 2009 Chin. Phys. B 18 3008
[8]	Stankovich S, Dikin D A, Dommett G H B, Kohlhaas K M, Zimney E J, Stach E A, Piner R D, Nguyen S T, Ruoff R S 2006 Nature 442 282
[9]	Di C A, Wei D C, Yu G, Liu Y Q, Guo Y L, Zhu D B 2008 Adv Mater 20 3289
[10]	Wu J S, Pisula W, Mullen K 2007 Chem. Rev. 107 718
[11]	Berger, C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de Heer, W 2004 The Journal of Physi. Chem. B 108 19912
[12]	B erger C, Song Z, L i X, Wu X, Brown N, Naud C, Mayou D, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, de Heer, W 2006 Science 312 1191
[13]	Tang J, Liu Z L, Kang C Y, Pan H B, Wei S Q, Xu P S, Gao Y Q, Xu X G 2009 Chin. Phys. Lett. 26 08814
[14]	Park C H, Cheong B Ch, Lee K H, Chang K J. 1994 Phys. Rev. B 49 4485
[15]	Jernigan G G, VanMil B L, Tedesco J L, Tischler J G, Glaser E R, Anthony Davidson Ⅲ, Campbell P M, Kurt Gaskill D 2009 Nano Letters 9 2605
[16]	Xu X G, Hu X B, Wang J Y, Jiang M H 2003 Journal of Synthetic Crystals 32 540 (in chinese) [徐现刚、胡小波、王继扬、蒋民华 2003 人工晶体学报 32 540 Mizokawa Y, Miyasato T, Nakamura S, Geib K M, Wilmsen C W, 1987 J. Vac. Sci. Technol. 5 2809 〖18] Peneluas J, Ouerghi A, Lucot D, David C, Gierak J, Estrade-Szwarckopf H, Andreazza-Vignolle C 2009 Phys. Rev. B 79 033408
[17]	Ni Z H, Chen W, Fan X F, Kuo J L, Yu T, wee A S T, Shen Z X 2008 Phys. Rev. B 77 115416
[18]	Thomsen C, Reich S 2000 Phys. Rev. L 85 5214
[19]	Chen D M 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 2010 59 6399]
[20]	Wei Yong, Tong G P 2010 Acta Phys. Sin. 59 372 (in Chinese) [韦勇、童国平 2010 59 372]
[21]	Röhrl J, Hundhausen M, Emtsev K V, Seyller Th, Graupner R, Ley L 2008 Appl. Phys. Lett. 92 01918
[22]	Ferralis N, Maboudian R, Carraro C 2008 Phys. Rev. Lett. 101 156801
[23]	Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006 Phys. Rev. Lett. 97 187401
[24]	Tang J, Liu Z L, Ren P, Yao T, Yan W S, Xu P S ,Wei S Q 2010 Acta Phys. Sin. 59 372 ( in Chinese) [唐军、刘忠良、任鹏、姚涛、闫文盛、徐彭寿、韦世强 2010 59 372]
[25]	Batson P E 1993 Phys. Rev. B 48 2608
[26]	Abbas M, Wu Z Y, Zhong J, Ibrahim K, Fiori A, Orlanducci S 2005 Appl. Phys. Lett. 87 051923

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