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利用飞秒激光直写微纳加工平台, 对6H-SiC材料进行了突破衍射极限的微纳结构加工研究. 使用中心波长和脉宽分别为800 nm和130 fs的钛蓝宝石激光器和荧光倒置显微镜搭建了飞秒激光直写微纳加工平台, 研究了在不同的实验条件下对6H-SiC的光学加工情况, 采用扫描电子显微镜对加工结构进行表征. 通过分析不同的激光功率和不同的曝光时间等实验条件下加工的分辨率, 发现分辨率随着激光功率的减小而提高, 随扫描速度的增大而提高, 且能突破光学衍射极限. 最终获得125 nm的加工线宽, 并加工了加工线宽240 nm, 周期1.0 μm的线阵列. 研究结果为微机电系统(MEMS)的微器件设计开创了新的思路, 对发展MEMS器件具有重要意义.Sub-diffraction-limit fabrication of 6H-SiC is investigated with femtosecond laser direct-write setup. Micro/nano-fabrication on 6H-SiC is studied with a home-made micro/nano-fabrication platform, which is integrated with a fluorescence microscope and a Ti:sapphire laser with a central wavelength of 800 nm and pulse duration of 130 fs. Micro/nano-structures are characterized with scanning electron microscope. It is found that the spatial resolution is improved with the decrease of laser power and the increase of scanning velocity. The smallest resolution achieved is 125 nm and line array with a line width of 240 nm and a period of 1 μm is fabricated. This work paves the new way for integrated micro electro-mechanical systems devices.
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Keywords:
- femtosecond laser direct-write /
- sub-diffraction-limit fabrication /
- 6H-SiC /
- micro-electro-mechanical
[1] Pecholt B, Gupta S, Molian P 2011 J. Laser Appl. 23 1
[2] Sarro P M 2000 Sensors and Actuators 82 210
[3] Zetterling C M 2002 Process Technology for Silicon Carbide Devices p7
[4] Shang Y C, Zhang Y M, Zhang Y M 2000 Acta Phys. Sin. 49 1786 (in Chinese) [尚也淳, 张义门, 张玉明 2000 49 1786]
[5] Xu C F, Yang Y T, Liu L 2002 Acta Phys. Sin. 51 1113 (in Chinese) [徐昌发, 杨银堂, 刘莉 2002 51 1113]
[6] Okojie R S, Ned A A, Kurtz A D 1998 Sensors and Actuators A 66 200
[7] Pakula L S, Yang H, Pham H T M, French P J, Sarro P M 2004 J. Micromech. Microeng. 14 1478
[8] Young D J, Du J G, Zorman C A, Ko W H 2004 IEEE Sensors Journal 4 464
[9] Atwell A R, Okojie R S, Kornegay K T, Roberson S L, Beliveau A 2003 Sensors and Actuators A 104 11
[10] Pecholt B, Vendan M, Dong Y Y, Molian P 2008 Int. J. Adv. Manuf. Technol. 39 239
[11] Yasseen A A, Wu C H, Zorman C A, Mehregany M 2000 IEEE Electron Device Letters 21 164
[12] Zhou Y H, Zhang Y M, Zhang Y M, Meng X Z 2004 Acta Phys. Sin. 53 3710 (in Chinese) [周拥华, 张义门, 张玉明, 孟祥志 2004 53 3710]
[13] Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2004 Chin. Phys. 13 1110
[14] Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2005 Chin. Phys. 14 583
[15] Hossain T K, Maclaren S, Engel J M, Liu C, Adesida I, Okojie R S 2006 J. Micromech. Microeng. 16 751
[16] Chai C C, Yang Y T, Li Y J, Jia H J, Han J 2001 Res. Prog. SSE 21 109 (in Chinese) [柴常春, 杨银堂, 李跃进, 贾护军, 韩键 2001 固体电子学研究与进展 21 109]
[17] Huang W, Chen Z Z, Chen B Y, Zhang J Y, Yan C F, Xiao B, Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维, 陈之战, 陈博源, 张静玉, 严成峰, 肖兵, 施尔畏 2009 58 3443]
[18] Farsari M, Filippidis G, Zoppel S, Reider G A, Fotakis C 2005 J. Micromech. Microeng. 15 1786
[19] Zoppel S, Farsari M, Merz R, Zehetner J, Stangl G, Reider G A, Fotakis C 2005 Microelectronic Engineering 83 1400
[20] Desbiens J P, Masson P 2007 Sensors and Actuators A 136 554
[21] Kawata S, Sun H B, Tanaka T, Takada K 2001 Nature 412 697
[22] Dong X Z, Chen W Q, Zhao Z S, Duan X M 2008 Sci. China 53 2 (in Chinese) [董贤子, 陈卫强, 赵震声, 段宣明 2008 中国科学 53 2]
[23] Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen X F, Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese) [康朝阳, 唐军, 李利民, 潘海斌, 闫文盛, 徐彭寿, 韦世强, 陈秀芳, 徐现刚 2011 60 047302]
[24] Tomita T, Okada T, Kawahara T, Kumai R, Matsuo S, Hashimoto S, Kawamoto M, Yamaguchi M, Ueno S, Shindou E, Yoshida A 2010 Appl. Phys. A 100 113
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[1] Pecholt B, Gupta S, Molian P 2011 J. Laser Appl. 23 1
[2] Sarro P M 2000 Sensors and Actuators 82 210
[3] Zetterling C M 2002 Process Technology for Silicon Carbide Devices p7
[4] Shang Y C, Zhang Y M, Zhang Y M 2000 Acta Phys. Sin. 49 1786 (in Chinese) [尚也淳, 张义门, 张玉明 2000 49 1786]
[5] Xu C F, Yang Y T, Liu L 2002 Acta Phys. Sin. 51 1113 (in Chinese) [徐昌发, 杨银堂, 刘莉 2002 51 1113]
[6] Okojie R S, Ned A A, Kurtz A D 1998 Sensors and Actuators A 66 200
[7] Pakula L S, Yang H, Pham H T M, French P J, Sarro P M 2004 J. Micromech. Microeng. 14 1478
[8] Young D J, Du J G, Zorman C A, Ko W H 2004 IEEE Sensors Journal 4 464
[9] Atwell A R, Okojie R S, Kornegay K T, Roberson S L, Beliveau A 2003 Sensors and Actuators A 104 11
[10] Pecholt B, Vendan M, Dong Y Y, Molian P 2008 Int. J. Adv. Manuf. Technol. 39 239
[11] Yasseen A A, Wu C H, Zorman C A, Mehregany M 2000 IEEE Electron Device Letters 21 164
[12] Zhou Y H, Zhang Y M, Zhang Y M, Meng X Z 2004 Acta Phys. Sin. 53 3710 (in Chinese) [周拥华, 张义门, 张玉明, 孟祥志 2004 53 3710]
[13] Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2004 Chin. Phys. 13 1110
[14] Tang X Y, Zhang Y M, Zhang Y M, Gao J X 2005 Chin. Phys. 14 583
[15] Hossain T K, Maclaren S, Engel J M, Liu C, Adesida I, Okojie R S 2006 J. Micromech. Microeng. 16 751
[16] Chai C C, Yang Y T, Li Y J, Jia H J, Han J 2001 Res. Prog. SSE 21 109 (in Chinese) [柴常春, 杨银堂, 李跃进, 贾护军, 韩键 2001 固体电子学研究与进展 21 109]
[17] Huang W, Chen Z Z, Chen B Y, Zhang J Y, Yan C F, Xiao B, Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维, 陈之战, 陈博源, 张静玉, 严成峰, 肖兵, 施尔畏 2009 58 3443]
[18] Farsari M, Filippidis G, Zoppel S, Reider G A, Fotakis C 2005 J. Micromech. Microeng. 15 1786
[19] Zoppel S, Farsari M, Merz R, Zehetner J, Stangl G, Reider G A, Fotakis C 2005 Microelectronic Engineering 83 1400
[20] Desbiens J P, Masson P 2007 Sensors and Actuators A 136 554
[21] Kawata S, Sun H B, Tanaka T, Takada K 2001 Nature 412 697
[22] Dong X Z, Chen W Q, Zhao Z S, Duan X M 2008 Sci. China 53 2 (in Chinese) [董贤子, 陈卫强, 赵震声, 段宣明 2008 中国科学 53 2]
[23] Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen X F, Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese) [康朝阳, 唐军, 李利民, 潘海斌, 闫文盛, 徐彭寿, 韦世强, 陈秀芳, 徐现刚 2011 60 047302]
[24] Tomita T, Okada T, Kawahara T, Kumai R, Matsuo S, Hashimoto S, Kawamoto M, Yamaguchi M, Ueno S, Shindou E, Yoshida A 2010 Appl. Phys. A 100 113
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