[1] |
Jiang Yan-Bo, Liu Wen-Bo, Sun Zhi-Peng, La Yong-Xiao, Yun Di. Phase-field simulation of void evolution in UO2 under applied stress. Acta Physica Sinica,
2022, 71(2): 026103.
doi: 10.7498/aps.71.20211440
|
[2] |
Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane. Acta Physica Sinica,
2019, 68(15): 158501.
doi: 10.7498/aps.68.20190646
|
[3] |
Ma Qun-Gang, Zhou Liu-Fei, Yu Yue, Ma Guo-Yong, Zhang Sheng-Dong. Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane. Acta Physica Sinica,
2019, 68(10): 108501.
doi: 10.7498/aps.68.20190265
|
[4] |
Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica,
2018, 67(2): 027101.
doi: 10.7498/aps.67.20171969
|
[5] |
Zhou Bin, Huang Yun, En Yun-Fei, Fu Zhi-Wei, Chen Si, Yao Ruo-He. Interfacial reaction and failure mechanism of Cu/Ni/SnAg1.8/Cu flip chip Cu pillar bump under thermoelectric stresses. Acta Physica Sinica,
2018, 67(2): 028101.
doi: 10.7498/aps.67.20171950
|
[6] |
Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica,
2015, 64(12): 127303.
doi: 10.7498/aps.64.127303
|
[7] |
Zhao Ning, Zhong Yi, Huang Ming-Liang, Ma Hai-Tao, Liu Xiao-Ping. Effect of thermomigration on the growth kinetics of Cu6Sn5 at liquid-solid interfaces in Cu/Sn/Cu solder joints. Acta Physica Sinica,
2015, 64(16): 166601.
doi: 10.7498/aps.64.166601
|
[8] |
Dong Gang, Liu Dang, Shi Tao, Yang Yin-Tang. Effects of thermal stress induced by mulitiple through silicon vias on mobility and keep out zone. Acta Physica Sinica,
2015, 64(17): 176601.
doi: 10.7498/aps.64.176601
|
[9] |
Guo Chun-Sheng, Wan Ning, Ma Wei-Dong, Zhang Yan-Feng, Xiong Cong, Feng Shi-Wei. Rapid identification of the consistency of failure mechanism for constant temperature stress accelerated testing. Acta Physica Sinica,
2013, 62(6): 068502.
doi: 10.7498/aps.62.068502
|
[10] |
He Liang, Du Lei, Huang Xiao-Jun, Chen Hua, Chen Wen-Hao, Sun Peng, Han Liang. Non-Gaussian analysis of noise for metal interconnection electromigration. Acta Physica Sinica,
2012, 61(20): 206601.
doi: 10.7498/aps.61.206601
|
[11] |
Lin Xiao-Ling, Xiao Qing-Zhong, En Yun-Fei, Yao Ruo-He. Failure mechanism of FC-PBGA devices under external stress. Acta Physica Sinica,
2012, 61(12): 128502.
doi: 10.7498/aps.61.128502
|
[12] |
Wu Zhen-Yu, Dong Si-Wan, Liu Yi, Chai Chang-Chun, Yang Yin-Tang. Resistometric study on electromigration failure in copper interconnects. Acta Physica Sinica,
2012, 61(24): 248501.
doi: 10.7498/aps.61.248501
|
[13] |
Wu Zhen-Yu, Yang Yin-Tang, Chai Chang-Chun, Liu Li, Peng Jie, Wei Jing-Tian. A microstructure-based study on electromigration in Cu interconnects. Acta Physica Sinica,
2012, 61(1): 018501.
doi: 10.7498/aps.61.018501
|
[14] |
Zhang Jin-Song, Wu Yi-Ping, Wang Yong-Guo, Tao Yuan. Thermomigration in micro interconnects in integrated circuits. Acta Physica Sinica,
2010, 59(6): 4395-4402.
doi: 10.7498/aps.59.4395
|
[15] |
Wu Zhen-Yu, Yang Yin-Tang, Chai Chang-Chun, Li Yue-Jin, Wang Jia-You, Liu Bin. The effect of via size on the stress migration of Cu interconnects. Acta Physica Sinica,
2008, 57(6): 3730-3734.
doi: 10.7498/aps.57.3730
|
[16] |
Wang Jun-Zhong, Ji Yuan, Wang Xiao-Dong, Liu Zhi-Min, Luo Jun-Feng, Li Zhi-Guo. Microstructures of Al and Cu interconnects. Acta Physica Sinica,
2007, 56(1): 371-375.
doi: 10.7498/aps.56.371
|
[17] |
. Research on noise correlation dimension of metallic interconnection electromigration. Acta Physica Sinica,
2007, 56(12): 7176-7182.
doi: 10.7498/aps.56.7176
|
[18] |
Chen Chun-Xia, Du Lei, He Liang, Hu Jin, Huang Xiao-Jun, Wei Tao. Fractal character of noise in electromigration in metel interconnection. Acta Physica Sinica,
2007, 56(11): 6674-6679.
doi: 10.7498/aps.56.6674
|
[19] |
Zhang Wen-Jie, Yi Wan-Bing, Wu Jin. Electromigration in Al interconnects and the challenges in ultra-deep submicron technology. Acta Physica Sinica,
2006, 55(10): 5424-5434.
doi: 10.7498/aps.55.5424
|
[20] |
Liu Hong-Xia, Zheng Xue-Feng, Hao Yue. Generation mechanism of stress induced leakage current in flash memory cell. Acta Physica Sinica,
2005, 54(12): 5867-5871.
doi: 10.7498/aps.54.5867
|