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针对加速实验中因失效机理发生改变而导致的无效实验问题, 对失效机理一致性和分别在不同应力下器件的初期退化参数分布的关系进行了研究. 研究证明了判断加速实验失效机理一致的条件: 1) 不同应力下失效分布的形状参数服从一致, 即mi=m, i=1,2,3,···, 2) 尺度参数 ηi服从ηi= AFi·η. 从而提供一种在实验初期即可根据参数退化分布快速判别不同应力下失效机理是否一致的方法, 避免了因失效机理发生改变而造成的无效加速实验. 最后对加速实验初期理论退化数据和多芯片组件厚膜电阻初期退化数据进行了威布尔分布参数估计, 并对其在不同应力下的失效机理一致性进行了判别.
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关键词:
- 失效机理一致性 /
- 恒定温度应力加速实验 /
- 威布尔分布
For avoiding the invalid acceleration experiments caused by the changes of the failure mechanism, the relationship of the failure mechanism consistency and the parameters of degradation data distribution in the early stage under different accelerated stress levels has been derived. Conditions for judging the failure mechanism consistency are also given as follows: firstly, the shape parameters of failure distribution has a uniform distribution mi=m, i=1,2,3,···; secondly, the dimension parameter ηi follows the equation ηi=AFi·η. A method to rapidly discriminate the consistency of failure mechanism under different experimental stresses in the early stage was obtained, and the invalid acceleration experiments caused by the changes of the failure mechanism could be avoided. Finally, theoretical degenerate data in the early stage of the accelerated test and the initial degenerate data of the MCM thick-film resistor were used for estimating, Weibull distribution parameter, and the consistency of failure mechanism degradation was also judged.-
Keywords:
- failure mechanism consistency /
- constant temperature stress accelerated test /
- Weibull distribution
[1] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[2] Wang X H, Wang J H, Pang L, Yuan T T, Luo W J, Liu X Y 2012 Acta Phys. Sin. 61 177302 (in Chinese) [王鑫华, 王建辉, 庞磊, 袁婷婷, 罗卫军, 刘新宇 2012 61 177302]
[3] Zhang F P, Du J M, Liu Y S, Liu Y, Liu G M, He H L 2011 Acta Phys. Sin. 60 057701 (in Chinese) [张福平, 杜金梅, 刘雨生, 刘艺, 刘高旻, 贺红亮 2011 60 057701]
[4] Guo C S, Xie X S, Ma W D, Cheng Y H, Li Z G 2006 J. Semicond. 27 560 (in Chinese) [郭春生, 谢雪松, 马卫东, 程尧海, 李志国 2006 半导体学报 27 560]
[5] Hu J M, Barker D B, Dasgupta A, Arora A K 1992 Proceedings of the Reliability and Maintainability Symposium Las Vegas, NV Jan. 21-23, 1992 p181
[6] Nelson W 1972 IEEE T. Reliab. R-21 2
[7] Gu Y 2004 Reliability Engineering Mathematics (Beijing: Publishing House of Electronics Industry) p207 (in Chinese) [顾瑛 2004 可靠性工程数学 (北京: 电子工业出版社) 第207页]
[8] Redhead P A 1962 Vacuum 12 203
[9] Pasco R W, Schwarz J A 1983 Solid-state Electronics 26 445
[10] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
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[1] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[2] Wang X H, Wang J H, Pang L, Yuan T T, Luo W J, Liu X Y 2012 Acta Phys. Sin. 61 177302 (in Chinese) [王鑫华, 王建辉, 庞磊, 袁婷婷, 罗卫军, 刘新宇 2012 61 177302]
[3] Zhang F P, Du J M, Liu Y S, Liu Y, Liu G M, He H L 2011 Acta Phys. Sin. 60 057701 (in Chinese) [张福平, 杜金梅, 刘雨生, 刘艺, 刘高旻, 贺红亮 2011 60 057701]
[4] Guo C S, Xie X S, Ma W D, Cheng Y H, Li Z G 2006 J. Semicond. 27 560 (in Chinese) [郭春生, 谢雪松, 马卫东, 程尧海, 李志国 2006 半导体学报 27 560]
[5] Hu J M, Barker D B, Dasgupta A, Arora A K 1992 Proceedings of the Reliability and Maintainability Symposium Las Vegas, NV Jan. 21-23, 1992 p181
[6] Nelson W 1972 IEEE T. Reliab. R-21 2
[7] Gu Y 2004 Reliability Engineering Mathematics (Beijing: Publishing House of Electronics Industry) p207 (in Chinese) [顾瑛 2004 可靠性工程数学 (北京: 电子工业出版社) 第207页]
[8] Redhead P A 1962 Vacuum 12 203
[9] Pasco R W, Schwarz J A 1983 Solid-state Electronics 26 445
[10] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
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