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For avoiding the invalid acceleration experiments caused by the changes of the failure mechanism, the relationship of the failure mechanism consistency and the parameters of degradation data distribution in the early stage under different accelerated stress levels has been derived. Conditions for judging the failure mechanism consistency are also given as follows: firstly, the shape parameters of failure distribution has a uniform distribution mi=m, i=1,2,3,···; secondly, the dimension parameter ηi follows the equation ηi=AFi·η. A method to rapidly discriminate the consistency of failure mechanism under different experimental stresses in the early stage was obtained, and the invalid acceleration experiments caused by the changes of the failure mechanism could be avoided. Finally, theoretical degenerate data in the early stage of the accelerated test and the initial degenerate data of the MCM thick-film resistor were used for estimating, Weibull distribution parameter, and the consistency of failure mechanism degradation was also judged.
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Keywords:
- failure mechanism consistency /
- constant temperature stress accelerated test /
- Weibull distribution
[1] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[2] Wang X H, Wang J H, Pang L, Yuan T T, Luo W J, Liu X Y 2012 Acta Phys. Sin. 61 177302 (in Chinese) [王鑫华, 王建辉, 庞磊, 袁婷婷, 罗卫军, 刘新宇 2012 61 177302]
[3] Zhang F P, Du J M, Liu Y S, Liu Y, Liu G M, He H L 2011 Acta Phys. Sin. 60 057701 (in Chinese) [张福平, 杜金梅, 刘雨生, 刘艺, 刘高旻, 贺红亮 2011 60 057701]
[4] Guo C S, Xie X S, Ma W D, Cheng Y H, Li Z G 2006 J. Semicond. 27 560 (in Chinese) [郭春生, 谢雪松, 马卫东, 程尧海, 李志国 2006 半导体学报 27 560]
[5] Hu J M, Barker D B, Dasgupta A, Arora A K 1992 Proceedings of the Reliability and Maintainability Symposium Las Vegas, NV Jan. 21-23, 1992 p181
[6] Nelson W 1972 IEEE T. Reliab. R-21 2
[7] Gu Y 2004 Reliability Engineering Mathematics (Beijing: Publishing House of Electronics Industry) p207 (in Chinese) [顾瑛 2004 可靠性工程数学 (北京: 电子工业出版社) 第207页]
[8] Redhead P A 1962 Vacuum 12 203
[9] Pasco R W, Schwarz J A 1983 Solid-state Electronics 26 445
[10] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
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[1] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[2] Wang X H, Wang J H, Pang L, Yuan T T, Luo W J, Liu X Y 2012 Acta Phys. Sin. 61 177302 (in Chinese) [王鑫华, 王建辉, 庞磊, 袁婷婷, 罗卫军, 刘新宇 2012 61 177302]
[3] Zhang F P, Du J M, Liu Y S, Liu Y, Liu G M, He H L 2011 Acta Phys. Sin. 60 057701 (in Chinese) [张福平, 杜金梅, 刘雨生, 刘艺, 刘高旻, 贺红亮 2011 60 057701]
[4] Guo C S, Xie X S, Ma W D, Cheng Y H, Li Z G 2006 J. Semicond. 27 560 (in Chinese) [郭春生, 谢雪松, 马卫东, 程尧海, 李志国 2006 半导体学报 27 560]
[5] Hu J M, Barker D B, Dasgupta A, Arora A K 1992 Proceedings of the Reliability and Maintainability Symposium Las Vegas, NV Jan. 21-23, 1992 p181
[6] Nelson W 1972 IEEE T. Reliab. R-21 2
[7] Gu Y 2004 Reliability Engineering Mathematics (Beijing: Publishing House of Electronics Industry) p207 (in Chinese) [顾瑛 2004 可靠性工程数学 (北京: 电子工业出版社) 第207页]
[8] Redhead P A 1962 Vacuum 12 203
[9] Pasco R W, Schwarz J A 1983 Solid-state Electronics 26 445
[10] Guo C S, Wan N, Ma W D, Xiong C, Zhang G C, Feng S W 2011 Acta Phys. Sin. 60 128501 (in Chinese) [郭春生, 万宁, 马卫东, 熊聪, 张光沉, 冯士维 2011 60 128501]
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