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The effects of high temperature annealing on the stability of the intrinsic defects in unintentionally doped epitaxial 4H-SiC prepared by low pressure chemical vapor deposition (LPCVD) are studied by electron spin resonance (ESR) and low-temperature photoluminescence (PL). The results showed that the concentration of intrinsic defects increases with increasing annealing temperature and reaches its maximum at 1573 K, then decreases with the gradually increasing annealing temperature when annealing time is 10 min or 30 min. The annealing temperature has an important effect on the concentration of intrinsic defects in epitaxial semi-insulating 4H-SiC prepared by LPCVD, whics is attributed to the process of intrinsic defects being stabilized and the strong interaction between the intrinsic defects during annealing.
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Keywords:
- high temperature annealing /
- intrinsic defects /
- ESR spectrum /
- PL
[1] ［1］Sriram S, Ward A, Henning J, Allen S T 2005 MRS Bull. 30 308
[2] ［2］Waldrop J R, Grant R W, Wang Y C, Davies R F 1992 J. Appl. Phys. 72 4757
[3] ［3］Cochran C J, Lenahan P M 2007 Appl. Phys. Lett. 90 123501
[4] ［4］Jenny J R, Müller St G, Powell A, Tsvetkov V F, Hobgood H M, Glass R C, Carter C H 2002 J. Electron. Mater. 31 366
[5] ［5］Ellison, Magnusson B, Hemmingsson C, Magnusson W, Iakimov T, Storasta L, Henry A, Henelius N H, Janzén E 2001 Mater. Res. Soc. Symp. Proc. 640 H1.21.1
[6] ［6］Son N T, Carlsson P, Gllstrm A, Magnusson B, Janzén E 2007 Physica B 401 67
[7] ［7］Janzén E, Son NT, Magnusson B, Ellison A 2006 Microelectronic Engineering 83 130
[8] ［8］Carlos W E, Garces N Y, Glaser E R 2006 Phys. Rev. B 74 235201
[9] ［9］Son N T, Magnusson B, Zolnai Z, Ellison A, Janzeén E 2004 Mater.Sci. Forum 457-460 437
[10] ］Alfieri G, Kimoto T 2007 J. Phys. Condens. Matter 19 306204
[11] ］Cheng P, Zhang Y M, Guo H, Zhang Y M,Liao Y L 2009 Acta Phys . Sin 58 4214 (in Chinese) ［程萍、张玉明、郭辉、张义门、廖宇龙 2009 58 4214］
[12] ］Korsunska N E, Tarasov I, Kushnirenks V, Ostapenko S 2004 Semicond, Sci. Technol. 19 833
[13] ］Lauer V 1999 Mater. Sci. Eng. B 61-62 248
[14] ］Ivanov V Y 2008 Opt. Mater. 30 748
[15] ］Jia R X, Zhang Y M, Zhang Y M, Guo H, Luan S Z 2008 Acta Phys. Sin. 57 4457(in Chinese) ［贾仁需、张义门、张玉明、郭辉、栾苏珍 2008 57 4457］
[16] ］Carlos W E, Glaser E R, Shanabrook B V 2003 Physica B 151 340
[17] ］Michel Bockstedte, Adam Gali, Alexander Mattausch, Pankratov O, Steeds J W 2008 J. Phys. Stat. Sol. B 7 1281
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[1] ［1］Sriram S, Ward A, Henning J, Allen S T 2005 MRS Bull. 30 308
[2] ［2］Waldrop J R, Grant R W, Wang Y C, Davies R F 1992 J. Appl. Phys. 72 4757
[3] ［3］Cochran C J, Lenahan P M 2007 Appl. Phys. Lett. 90 123501
[4] ［4］Jenny J R, Müller St G, Powell A, Tsvetkov V F, Hobgood H M, Glass R C, Carter C H 2002 J. Electron. Mater. 31 366
[5] ［5］Ellison, Magnusson B, Hemmingsson C, Magnusson W, Iakimov T, Storasta L, Henry A, Henelius N H, Janzén E 2001 Mater. Res. Soc. Symp. Proc. 640 H1.21.1
[6] ［6］Son N T, Carlsson P, Gllstrm A, Magnusson B, Janzén E 2007 Physica B 401 67
[7] ［7］Janzén E, Son NT, Magnusson B, Ellison A 2006 Microelectronic Engineering 83 130
[8] ［8］Carlos W E, Garces N Y, Glaser E R 2006 Phys. Rev. B 74 235201
[9] ［9］Son N T, Magnusson B, Zolnai Z, Ellison A, Janzeén E 2004 Mater.Sci. Forum 457-460 437
[10] ］Alfieri G, Kimoto T 2007 J. Phys. Condens. Matter 19 306204
[11] ］Cheng P, Zhang Y M, Guo H, Zhang Y M,Liao Y L 2009 Acta Phys . Sin 58 4214 (in Chinese) ［程萍、张玉明、郭辉、张义门、廖宇龙 2009 58 4214］
[12] ］Korsunska N E, Tarasov I, Kushnirenks V, Ostapenko S 2004 Semicond, Sci. Technol. 19 833
[13] ］Lauer V 1999 Mater. Sci. Eng. B 61-62 248
[14] ］Ivanov V Y 2008 Opt. Mater. 30 748
[15] ］Jia R X, Zhang Y M, Zhang Y M, Guo H, Luan S Z 2008 Acta Phys. Sin. 57 4457(in Chinese) ［贾仁需、张义门、张玉明、郭辉、栾苏珍 2008 57 4457］
[16] ］Carlos W E, Glaser E R, Shanabrook B V 2003 Physica B 151 340
[17] ］Michel Bockstedte, Adam Gali, Alexander Mattausch, Pankratov O, Steeds J W 2008 J. Phys. Stat. Sol. B 7 1281
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