聚丙烯/氧化铝纳米电介质的陷阱与直流击穿特性

马超; 闵道敏; 李盛涛; 郑旭; 李西育; 闵超; 湛海涯

doi:10.7498/aps.66.067701

摘要

聚丙烯电介质的直流击穿场强是影响其储能密度的关键因素，纳米氧化铝掺杂是一种提高聚合物电介质击穿场强的有效方法，因此有必要开展聚丙烯/氧化铝纳米电介质直流击穿特性的研究.为了探究其直流击穿机理，通过熔融共混法制备了聚丙烯/氧化铝纳米电介质试样，观察了其显微结构，并对其表面电位衰减特性、体电阻率和直流击穿场强进行了测试.实验结果表明，随着纳米氧化铝含量的增加，深陷阱能级和密度、体电阻率和直流击穿场强都呈现先升高后降低的趋势，当纳米氧化铝含量为0.5 wt%时出现最大值，其中，直流击穿场强相比于未掺杂时可提高27%左右.根据纳米电介质交互区模型，分析了聚丙烯/氧化铝纳米电介质的显微结构和陷阱参数之间的关系.基于空间电荷击穿理论，利用陷阱参数对聚丙烯/氧化铝纳米电介质直流击穿机理进行了探讨.认为交互区为聚丙烯/氧化铝纳米电介质提供了更多深陷阱，而深陷阱能级和密度在较高纳米掺杂量时出现不同程度的降低可能是由双电层模型交互区重叠所致；深陷阱能级和密度的增加可降低载流子的注入量，进而提高其体电阻率和直流击穿场强.

关键词:

Abstract

Polypropylene (PP) is widely used as capacitor films due to its better dielectric, mechanical, and thermal performance. In order to reduce the cost and size of capacitor, high energy density for PP dielectric is pursued. Since energy density is in quadratic proportion to direct current (dc) breakdown strength for linear dielectric, the enhancement of dc breakdown strength for PP dielectric is a primary choice to improve the energy density. Considering that the incorporation of nano-Al2O3 is an effective method to improve the dc breakdown strength for polymer, it is required to study the dc breakdown strength of PP/Al2O3 nanodielectric. In order to explore the breakdown mechanism, PP/Al2O3 nanodielectrics with different nano-particle contents are prepared by melt blending, and the samples are prepared by hot pressing. Their microstructures are observed by scanning electron microscopic. Isothermal surface potential decay, bulk resistivity, and dc breakdown strength of the samples are also measured. The experimental results show that the energy and density of deep traps, bulk resistivity, and dc breakdown strength first increase and then decrease with the increase in nano-Al2O3 content. The maximum values are obtained at a filer content value of 0.5 wt%, where dc breakdown strength can be increased by about 27%. Based on interface model, the relation between microstructure and trap is investigated. In view of space charge breakdown theory, the mechanism of dc breakdown for PP/Al2O3 nanodielectric is explored by trap parameters. It is indicated that the interface can provide more deep traps in PP/Al2O3 nanodielectric, while the decrease in the energy and density of deep traps can be attributed to the overlap of interfaces in electrical double layer. The increase in the energy and density of deep traps makes more carriers trapped near the injecting contact, thus reducing the effective field for carrier injection due to the internal field generated by the trapped carriers. The reduction of carrier injection can moderate the distortion of field in PP dielectric, consequently, resulting in enhancing the dc breakdown strength.

Keywords:

作者及机构信息

1.
西安交通大学, 电力设备电气绝缘国家重点实验室, 西安 710049;

2.
西安西电电气研究院有限责任公司技术研究中心, 西安 710077;

3.
西安西电电力电容器有限责任公司研发处, 西安 710082

通信作者: 闵道敏, forrestmin@xjtu.edu.cn

基金项目: 国家重点基础研究发展计划（批准号：2015CB251003）、清华大学电力系统国家重点实验室开放课题（批准号：SKLD16KZ04）、中国博士后科学基金（批准号：2014M552449）、中央高校基本科研业务费（批准号：xjj2014022）和西安交通大学新教师支持计划（批准号：DWSQc130000008）资助的课题.

Authors and contacts

1.
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China;

2.
Technical Research Center, Xi'an Electric Research Institute Co. LTD., Xi'an 710077, China;

3.
Research and development Department, Xi'an XD Power Capacitor Co. LTD., Xi'an 710082, China

Corresponding author: Min Dao-Min, forrestmin@xjtu.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2015CB251003), the Open Fund Project of State Key Laboratory of Power System of Tsinghua University, China (Grant No. SKLD16KZ04), the China Postdoctoral Science Foundation (Grant No. 2014M552449), the Fundamental Research Fund for the Central Universities, China (Grant No. xjj2014022), and the Program for New Teacher of Xi'an Jiaotong University, China (Grant No. DWSQc130000008).

参考文献

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[30]	Li H, Li Z W, Xu Z J, Lin F C, Wang B W, Li H Y, Zhang Q, Wang W J, Huang X 2014 IEEE Trans. Plasm. Sci. 42 3585
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施引文献

[1]	Rabuffi M, Picci G 2002 IEEE Trans. Plas. Sci. 30 1939
[2]	Li H, Wang B W, Li Z W, Liu D, Lin F C, Dai L, Zhang Q, Chen Y H 2013 Rev. Sci. Instrum. 84 104707
[3]	Dang Z M, Yuan J K, Yao S H, Liao R J 2013 Adv. Mater. 25 6334
[4]	Wang Q, Zhu L 2011 J. Polym. Sci. Part B: Polym. Phys. 49 1421
[5]	Wang Y F, Cui J, Yuan Q B, Niu Y J, Bai Y, Wang H 2015 Adv. Mater. 27 6658
[6]	Kolesov S N 1980 IEEE Trans. Electr. Insul. 15 382
[7]	Gao L Y, Tu D M, Zhou S C, Zhang Z L 1990 IEEE Trans. Electr. Insul. 25 535
[8]	Yuan X P, Chung T C M 2011 Appl. Phys. Lett. 98 062901
[9]	Tian F Q, Yang C, He L J, Han B, Wang Y, Lei Q Q 2011 Trans. China Electrotech. Soc. 26 1 (in Chinese) [田付强, 杨春, 何丽娟, 韩柏, 王毅, 雷清泉 2011 电工技术学报 26 1]
[10]	Lewis T J 2005 J. Phys. D: Appl. Phys. 38 202
[11]	Tanaka T, Kozako M, Fuse N, Ohki Y 2005 IEEE Trans. Electr. Insul. 12 669
[12]	Raetzke S, Kindersberger J 2010 IEEE Trans. Electr. Insul. 17 607
[13]	Li S T, Yin G L, Bai S N, Li J Y 2011 IEEE Trans. Electr. Insul. 18 1535
[14]	Wang F P, Xia Z F, Zhang X Q, Huang J F, Shen J 2007 Acta Phys. Sin. 56 6061 (in Chinese) [王飞鹏, 夏钟福, 张晓青, 黄金峰, 沈军 2007 56 6061]
[15]	Chen G J, Rao C P, Xiao H M, Huang H, Zhao Y H 2015 Acta Phys. Sin. 64 237702 (in Chinese) [陈钢进, 饶成平, 肖慧明, 黄华, 赵延海 2015 64 237702]
[16]	Gao J G, Hu H T, Zheng J, Yu L, Zhang X H 2010 Insul. Mater. 43 47 (in Chinese) [高俊国, 胡海涛, 郑杰, 俞利, 张晓虹 2010 绝缘材料 43 47]
[17]	Chi X H, Gao J G, Zheng J, Zhang X H 2014 Acta Phys. Sin. 63 177701 (in Chinese) [迟晓红, 高俊国, 郑杰, 张晓虹 2014 63 177701]
[18]	Takala M, Ranta H, Nevalainen P, Pakonen P, Pelto J, Karttunen M, Virtanen S, Koivu V, Pettersson M, Sonerud B, Kannus K 2010 IEEE Trans. Dielectr. Electr. Insul. 17 1259
[19]	Virtanen S, Ranta H, Ahonen S, Karttunen M, Pelto J, Kannus K, Pettersson M 2014 J. Appl. Polymer Sci. 131 39504
[20]	Rytluoto I, Lahti K, Karttunen M, Koponen M, Virtanen S, Pettersson M 2015 IEEE Trans. Dielectr. Electr. Insul. 22 2196
[21]	Li S T, Min D M, Wang W W, Chen G 2016 IEEE Trans. Dielectr. Electr. Insul. 23 2777
[22]	Kozako M, Yamano S, Kido R, Ohki Y, Kohtoh M, Okabe S, Tanaka T 2005 Proceedings of 2005 International Symposium on Electrical Insulating Materials Kitakyushu, Japan, June 5-9, 2005 p231
[23]	Wang W W 2015 Ph. D. Dissertation (Xi'an: Xi'an Jiaotong University) (in Chinese) [王威望 2015 博士学位论文 (西安: 西安交通大学)]
[24]	Li J Y, Zhou F S, Min D M, Li S T, Xia R 2015 IEEE Trans. Dielectr. Electr. Insul. 22 1723
[25]	Kao K C 2004 Dielectric Phenomena in Solids (San Diego, California: Elsevier) pp327-514
[26]	Dissado L A, Fothergill J C 1992 Electrical Degradation and Breakdown in Polymers (London: The Institution of Engineering and Technology) pp217-237
[27]	Matsui K, Tanaka Y, Takada T, Fukao T 2005 IEEE Trans. Dielectr. Electr. Insul. 12 406
[28]	Ho J, Jow T R 2012 IEEE Trans. Dielectr. Elect. Insul. 19 990
[29]	Ikezaki K, Kaneko T, Sakakibara T 1981 Jpn. J. Appl. Phys. 20 609
[30]	Li H, Li Z W, Xu Z J, Lin F C, Wang B W, Li H Y, Zhang Q, Wang W J, Huang X 2014 IEEE Trans. Plasm. Sci. 42 3585
[31]	Liu C D, Zheng F H, An Z L, Zhang Y W 2013 J. Hubei Univ. (Nat. Sci.) 35 320 (in Chinese) [刘川东, 郑飞虎, 安振连, 张冶文 2013 湖北大学学报 (自然科学版) 35 320]

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