| [1] |
Meng Shao-Yi, Hao Qi, Lyu Guo-Jian, Qiao Ji-Chao. The β relaxation process of La-based amorphous alloy: Effect of annealing and strain amplitude. Acta Physica Sinica,
2023, 72(7): 076101.
doi: 10.7498/aps.72.20222389
|
| [2] |
Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui. Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica,
2021, 70(17): 172401.
doi: 10.7498/aps.70.20210303
|
| [3] |
Jiang Yong, Yuan Xiao-Dong, Wang Hai-Jun, Liao Wei, Liu Chun-Ming, Xiang Xia, Qiu Rong, Zhou Qiang, Gao Xiang, Yang Yong-Jia, Zheng Wan-Guo, Zu Xiao-Tao, Miao Xin-Xiang. Effect of thermal annealing on damage growth of mitigated site on fused silica. Acta Physica Sinica,
2016, 65(4): 044209.
doi: 10.7498/aps.65.044209
|
| [4] |
Jia Yan-Li, Yang Hua, Yuan Jie, Yu He-Shan, Feng Zhong-Pei, Xia Hai-Liang, Shi Yu-Jun, He Ge, Hu Wei, Long You-Wen, Zhu Bei-Yi, Jin Kui. A brief analysis of annealing process for electron-doped cuprate superconductors. Acta Physica Sinica,
2015, 64(21): 217402.
doi: 10.7498/aps.64.217402
|
| [5] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica,
2015, 64(19): 198801.
doi: 10.7498/aps.64.198801
|
| [6] |
Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong. Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica,
2014, 63(6): 068102.
doi: 10.7498/aps.63.068102
|
| [7] |
Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica,
2012, 61(13): 137303.
doi: 10.7498/aps.61.137303
|
| [8] |
Hu Mei-Jiao, Li Cheng, Xu Jian-Fang, Lai Hong-Kai, Chen Song-Yan. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes. Acta Physica Sinica,
2011, 60(7): 078102.
doi: 10.7498/aps.60.078102
|
| [9] |
Luo Qing-Hong, Lou Yan-Zhi, Zhao Zhen-Ye, Yang Hui-Sheng. Effect of annealing on microstructure and mechanical propertiesof AlTiN multilayer coatings. Acta Physica Sinica,
2011, 60(6): 066201.
doi: 10.7498/aps.60.066201
|
| [10] |
Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji. Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica,
2009, 58(11): 7878-7883.
doi: 10.7498/aps.58.7878
|
| [11] |
Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
doi: 10.7498/aps.57.2562
|
| [12] |
Yang Shu-Ke, Bao Jin, Su Xi-Ping, Xu Xiao-Guang, Jiang Yong. Study of synthetic antiferromagnetic Ni81Fe19/Co90Fe10/Ru/Co90Fe10/Ni81Fe19. Acta Physica Sinica,
2008, 57(4): 2504-2508.
doi: 10.7498/aps.57.2504
|
| [13] |
Yang Jun, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Wang Bo. Influence of deep level defects on electrical compensation in semi-insulating InP materials. Acta Physica Sinica,
2007, 56(2): 1167-1171.
doi: 10.7498/aps.56.1167
|
| [14] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
doi: 10.7498/aps.56.4117
|
| [15] |
Zhao You-Wen, Dong Zhi-Yuan. Generation and suppression of deep level defects in InP. Acta Physica Sinica,
2007, 56(3): 1476-1479.
doi: 10.7498/aps.56.1476
|
| [16] |
Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica,
2007, 56(3): 1603-1607.
doi: 10.7498/aps.56.1603
|
| [17] |
Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
doi: 10.7498/aps.55.6085
|
| [18] |
Wu Shi-Liang, Chen Ye-Qing, Wu Yi-Chu, Wang Shao-Jie, Wen Xi-Yu, Zhai Tong-Guang. Positron annihilation study of hot band of a continuous cast AA 2037 Al alloy after annealing. Acta Physica Sinica,
2006, 55(11): 6129-6135.
doi: 10.7498/aps.55.6129
|
| [19] |
Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu. Influence of annealing temperature on the microstructure and photoluminescence of ZnO films. Acta Physica Sinica,
2006, 55(1): 430-436.
doi: 10.7498/aps.55.430
|
| [20] |
Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
doi: 10.7498/aps.55.3617
|
下载:
