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2024, 73(18): 183101.
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Meng Shao-Yi, Hao Qi, Lyu Guo-Jian, Qiao Ji-Chao. The β relaxation process of La-based amorphous alloy: Effect of annealing and strain amplitude. Acta Physica Sinica,
2023, 72(7): 076101.
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Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui. Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica,
2021, 70(17): 172401.
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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
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Jia Yan-Li, Yang Hua, Yuan Jie, Yu He-Shan, Feng Zhong-Pei, Xia Hai-Liang, Shi Yu-Jun, He Ge, Hu Wei, Long You-Wen, Zhu Bei-Yi, Jin Kui. A brief analysis of annealing process for electron-doped cuprate superconductors. Acta Physica Sinica,
2015, 64(21): 217402.
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica,
2015, 64(19): 198801.
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Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong. Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica,
2014, 63(6): 068102.
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Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2014, 63(4): 047202.
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Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica,
2012, 61(13): 137303.
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Hu Mei-Jiao, Li Cheng, Xu Jian-Fang, Lai Hong-Kai, Chen Song-Yan. Formation and properties of GeOI prepared by cyclic thermal oxidation and annealing processes. Acta Physica Sinica,
2011, 60(7): 078102.
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2011, 60(6): 066201.
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Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji. Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica,
2009, 58(11): 7878-7883.
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica,
2008, 57(4): 2562-2566.
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
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Zhao You-Wen, Miao Shan-Shan, Dong Zhi-Yuan, Lü Xiao-Hong, Deng Ai-Hong, Yang Jun, Wang Bo. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property. Acta Physica Sinica,
2007, 56(9): 5536-5541.
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Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica,
2007, 56(3): 1603-1607.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
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Wu Shi-Liang, Chen Ye-Qing, Wu Yi-Chu, Wang Shao-Jie, Wen Xi-Yu, Zhai Tong-Guang. Positron annihilation study of hot band of a continuous cast AA 2037 Al alloy after annealing. Acta Physica Sinica,
2006, 55(11): 6129-6135.
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Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu. Influence of annealing temperature on the microstructure and photoluminescence of ZnO films. Acta Physica Sinica,
2006, 55(1): 430-436.
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Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min. A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica,
2006, 55(7): 3617-3621.
doi: 10.7498/aps.55.3617
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