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We report on the electron field emission (FE) from multi-layer AlGaN nanofilm grown by pulsed laser deposition, and the investigation of the multi-layer quantum structure effect on the field emission performance. The results show that the as-grown film has a good crystallinity, and the thickness values of GaN, AlN, and GaN film are 25 nm, 50 nm, and 25 nm, respectively. The FE measurement indicates that compared with single layer, the multilayer filmhas a low turn-on field and large threshold current. The turn-on filed is found to be 0.93 V/m, and the electric current density reaches to 30 mA/cm2 at 5.5 V/m. The improvement of the FE performance is attributed to resonant tunneling in the quantum well structure, and the accumulated electrons lower the effective surface barrier. The outstanding performance of multi-layer filed emission film should provide a feasible technical solution for large current and high power density thin film field emission device.
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Keywords:
- AlGaN /
- multilayer nanofilm /
- quantum structure enhanced field emission /
- resonant tunneling
[1] Benjamin M C, Wang C, Davis R F, Nemanich R J 1994 Appl. Phys. Lett. 64 3288
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[19] Wang C S, Chen H C, Cheng H F, Lin I N 2009 Diam. Relat. Mater. 18 136
[20] Chen H C, Palnitkar U, Pong W F, Lin I N, Singh A P, Kumar R 2009 J. Appl. Phys. 105 083707
[21] Liu K F, Chen L J, Tai N H, Lin I N 2009 Diam. Relat. Mater. 18 181
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[23] Chen C C, Liu L Y, Wang R Z, Song X M, Wang B, Yan H 2013 Acta Phys. Sin. 62 177701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉2013 62 177701]
[24] Chen C C, Wang R Z, Liu P, Zhu M K, Wang B B, Yan H 2014 J. Appl. Phys. 115 153705
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[1] Benjamin M C, Wang C, Davis R F, Nemanich R J 1994 Appl. Phys. Lett. 64 3288
[2] Wu C I, Kahn A, Hellman E S, Buchanan D N E 1998 Appl. Phys. Lett. 73 1346
[3] Wu C I, Kahn A 1999 Appl. Phys. Lett. 74 1433
[4] Tang Y B, Bo X H, Xu J, Cao Y L, Chen Z H, Song H S, Liu C P, Hung T F, Zhang W J, Cheng H M, Bello I, Lee S T, Lee C S 2011 Acs Nano 5 3591
[5] Lin M C, Huang K H, Lu P S, Lin P Y, Jao R F 2005 J. Vac. Sci. Technol. B 23 849
[6] Liang F, Chen P, Zhao D G, Jiang D S, Liu Z S, Zhu J J, Yang J, Liu W, He X G, Li X J, Li X, Liu S T, Yang H, Zhang L Q, Liu J P, Zhang Y T, Du G T 2016 Chem. Phys. Lett. 651 76
[7] Zhao J W, Zhang Y F, Li Y H, Su C H, Song X M, Yan H, Wang R Z 2015 Sci. Rep. 5 17692
[8] Chen F, Ji X, Zhang Q 2015 J. Alloys Compd. 646 879
[9] Nabi G, Cao C, Hussain S, Khan W S, Sagar R R, Ali Z, Butt F K, Usman Z, Yu D 2012 Cryst. Eng. Comm. 14 8492
[10] He J H, Yang R S, Chueh Y L, Chou L J, Chen L J, Wang Z L 2006 Adv. Mater. 18 650
[11] Westover T, Jones R, Huang J Y, Wang G, Lai E, Talin A A 2009 Nano Lett. 9 257
[12] Boukai A I, Bunimovich Y, Tahir-Kheli J, Yu J K, Goddard Iii W A, Heath J R 2008 Nature 451 168
[13] Zhao W, Wang R Z, Song X M, Wang H, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 092101
[14] Shi M, Chen P, Zhao D G, Jiang D S, Zheng J, Cheng B W, Zhu J J, Liu Z S, Liu W, Li X, Zhao D M, Wang Q M, Liu J P, Zhang S M, Yang H 2015 Chin. Phys. B 24 057901
[15] Evtukh A, Yilmazoglu O, Litovchenko V, Semenenko M, Gorbanyuk T, Grygoriev A, Hartnagel H, Pavlidis D 2008 Phys. Stat. Sol. C 5 425
[16] Kryuchenko Y V 1996 J. Vac. Sci. Technol. B 14 1934
[17] Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H, Hou X Y 2005 Phys. Rev. B 72 125310
[18] Zhao W, Wang R Z, Song X M, Wang H, Wang B, Yan H, Chu P K 2011 Appl. Phys. Lett. 98 152110
[19] Wang C S, Chen H C, Cheng H F, Lin I N 2009 Diam. Relat. Mater. 18 136
[20] Chen H C, Palnitkar U, Pong W F, Lin I N, Singh A P, Kumar R 2009 J. Appl. Phys. 105 083707
[21] Liu K F, Chen L J, Tai N H, Lin I N 2009 Diam. Relat. Mater. 18 181
[22] Tiwari R N, Chang L 2010 J. Appl. Phys. 107 103305
[23] Chen C C, Liu L Y, Wang R Z, Song X M, Wang B, Yan H 2013 Acta Phys. Sin. 62 177701 (in Chinese)[陈程程, 刘立英, 王如志, 宋雪梅, 王波, 严辉2013 62 177701]
[24] Chen C C, Wang R Z, Liu P, Zhu M K, Wang B B, Yan H 2014 J. Appl. Phys. 115 153705
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