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Zhang Lei, Chen Qi-Hang, Cao Shuo, Qian Ping. First-principles calculations of carrier mobility in monolayer IrSCl and IrSI. Acta Physica Sinica,
2024, 73(21): 217201.
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Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei. Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica,
2024, 73(11): 117101.
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Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping. Carrier mobility in doped Sb2Se3 based on deformation potential theory. Acta Physica Sinica,
2024, 73(4): 047101.
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Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua. Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2023, 72(22): 227303.
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Cai Jing, Yao Ruo-He, Geng Kui-Wei. Effect of inserted AlxGa1–xN layer on characteristic of double-channel n-Al0.3Ga0.7N/GaN/i-AlxGa1–xN/GaN HEMT. Acta Physica Sinica,
2022, 71(16): 167301.
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Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue. Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica,
2018, 67(2): 027101.
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Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica,
2015, 64(3): 038501.
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Hua Yu-Chao, Cao Bing-Yang. A model for phonon thermal conductivity of multi-constrained nanostructures. Acta Physica Sinica,
2015, 64(14): 146501.
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Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo. Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica,
2014, 63(17): 177201.
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Liu Rui-Lan, Wang Xu-Liang, Tang Chao. Identification for hole transporting properties of NPB based on particle swarm optimization algorithm. Acta Physica Sinica,
2014, 63(2): 028105.
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Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian. Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor. Acta Physica Sinica,
2014, 63(19): 197302.
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Dong Hai-Ming. Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica,
2013, 62(20): 206101.
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Yu Huang-Zhong. Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica,
2012, 61(8): 087204.
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Luo Yang, Duan Yu, Chen Ping, Zang Chun-Liang, Xie Yue, Zhao Yi, Liu Shi-Yong. Preliminary investigation on the method of determining electron mobility of tris (8-hydroxyquinolinato) aluminum by space charge limited current. Acta Physica Sinica,
2012, 61(14): 147801.
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Jia Xiao-Fei, Du Lei, Tang Dong-He, Wang Ting-Lan, Chen Wen-Hao. Research on shot noise suppression in quasi-ballistic transport nano-mOSFET. Acta Physica Sinica,
2012, 61(12): 127202.
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Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117305.
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
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Xu Xue-Mei, Peng Jing-Cui, Li Hong-Jian, Qu Shu, Luo Xiao-Hua. . Acta Physica Sinica,
2002, 51(10): 2380-2385.
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YUAN DE-RONG, QIAO LING-ZHI. KINK SOLITON EXCITATION IN HYDROGEN BONDED CHAIN WITH ASYMMETRIC DOUBLE WELL POTENTIALS. Acta Physica Sinica,
2001, 50(3): 394-397.
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LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua. OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica,
2000, 49(8): 1614-1619.
doi: 10.7498/aps.49.1614
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