| [1] |
Yi En-Kui, Wang Bin, Shen Han, Shen Bing. Properties of axion insulator candidate layered Eu1–xCaxIn2As2. Acta Physica Sinica,
2021, 70(12): 127502.
doi: 10.7498/aps.70.20210042
|
| [2] |
Zhao Wen-Li, Wang Yong-Gang, Zhang Lu-Lu, Yue Da-Guang, Meng Qing-Tian. Wave packet quantum dynamics of ${\bf{C}}{(^3}{\bf{P}}) + {{\bf{H}}_2}({{\bf{X}}^1} \Sigma _{\bf{g}}^ + ) $ $ \to {\bf{H}}{(^2}{\bf{S}}) + {\bf{CH}}{(^2} \Pi ) $ reaction based on new CH2(${\tilde {\bf X}{}^3}\bf A''$ ) surface. Acta Physica Sinica,
2020, 69(8): 083401.
doi: 10.7498/aps.69.20200132
|
| [3] |
Wang Jian, Chuai Rong-Yan. Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica,
2017, 66(24): 247201.
doi: 10.7498/aps.66.247201
|
| [4] |
Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica,
2016, 65(3): 038501.
doi: 10.7498/aps.65.038501
|
| [5] |
Jia He-Shun, Luo Lei, Li Bing-Lin, Xu Zhen-Hua, Ren Xian-Kun, Jiang Yan-Sen, Cheng Liang, Zhang Chun-Yan. Performance of polycrystal silicon color solar cells. Acta Physica Sinica,
2013, 62(16): 168802.
doi: 10.7498/aps.62.168802
|
| [6] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica,
2012, 61(22): 227302.
doi: 10.7498/aps.61.227302
|
| [7] |
Chen Ying-Tian, T. H. Ho. Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica,
2011, 60(7): 078104.
doi: 10.7498/aps.60.078104
|
| [8] |
. Simulative calculation of electronic structure of F-doped SnO2. Acta Physica Sinica,
2007, 56(12): 7195-7200.
doi: 10.7498/aps.56.7195
|
| [9] |
Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen. The research on metal induced crystallization with chemical source. Acta Physica Sinica,
2006, 55(2): 825-829.
doi: 10.7498/aps.55.825
|
| [10] |
Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan. Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4. Acta Physica Sinica,
2006, 55(11): 5959-5963.
doi: 10.7498/aps.55.5959
|
| [11] |
Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica,
2006, 55(5): 2523-2528.
doi: 10.7498/aps.55.2523
|
| [12] |
Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying. The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica,
2005, 54(8): 3805-3809.
doi: 10.7498/aps.54.3805
|
| [13] |
Zeng Zhi-Jiang, Yang Qiu-Hong, Xu Jun. Spectroscopic characteristics of Cr3+:Al2O3 polycrystalline transparent alumina ceramics. Acta Physica Sinica,
2005, 54(11): 5445-5449.
doi: 10.7498/aps.54.5445
|
| [14] |
Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui. Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica,
2004, 53(5): 1558-1561.
doi: 10.7498/aps.53.1558
|
| [15] |
Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin. Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica,
2003, 52(11): 2934-2938.
doi: 10.7498/aps.52.2934
|
| [16] |
Du Lei, Zhuang Yi-Qi, Xue Li-Jun. Ａｕｎｉｆｉｅｄｍｏｄｅｌｆｏｒ 1 ｆｎｏｉｓｅａｎｄ 1 ｆ2 ｎｏｉｓｅｄｕｅｔｏｅｌｅｃｔｒｏｍｉｇｒａｔｉｏｎｉｎｍｅｔａｌｆｉｌｍ. Acta Physica Sinica,
2002, 51(12): 2836-2841.
doi: 10.7498/aps.51.2836
|
| [17] |
ZHANG TING-QING, LIU JIA-LU, LI JIAN-JUN, WANG JIAN-PING, ZHANG ZHENG-XUAN, XU NA-JUN, ZHAO YUAN-FU, HU YU-HONG. EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET. Acta Physica Sinica,
1999, 48(12): 2299-2303.
doi: 10.7498/aps.48.2299
|
| [18] |
LIU JIA-LU, ZHANG TING-QING, LI JIAN-JUN, ZHAO YUAN-FU. SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING. Acta Physica Sinica,
1997, 46(8): 1580-1584.
doi: 10.7498/aps.46.1580
|
| [19] |
WANG GUO-MEI, YUN HUAI-SHUN, JIANG BING, LI XING-DAN, WU DAI-HUA, YANG SHENG-RONG. STRUCTURE AND SURFACE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE ZrO2 IMPLANTED BY Ni ION. Acta Physica Sinica,
1996, 45(7): 1160-1167.
doi: 10.7498/aps.45.1160
|
| [20] |
CHEN CHANG-CHIA. THE DYNAMICAL MODEL OF THE VECTOR MESON φ AND THE VALUES OF THE COUPLING CONSTANTS fφKK2,fωKK2 AND fρKK2. Acta Physica Sinica,
1965, 21(12): 1996-2003.
doi: 10.7498/aps.21.1996
|
下载:
