| [1] |
Gao Xu-Dong, Yang De-Cao, Wei Wen-Jing, Li Gong-Ping. Simulation study of electron beam irradiation damage to ZnO and TiO2. Acta Physica Sinica,
2021, 70(23): 234101.
doi: 10.7498/aps.70.20211223
|
| [2] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
doi: 10.7498/aps.69.20190640
|
| [3] |
Liu Wei-Jie, Sun Zheng-Hao, Huang Yu-Xin, Leng Jing, Cui Hai-Ning. Electronic structures and optical properties of rare earth element (Yb) with different valences doped in ZnO. Acta Physica Sinica,
2013, 62(12): 127101.
doi: 10.7498/aps.62.127101
|
| [4] |
Li Hong-Lin, Zhang Zhong, Lü Ying-Bo, Huang Jin-Zhao, Zhang Ying, Liu Ru-Xi. First principles study on the electronic and optical properties of ZnO doped with rare earth. Acta Physica Sinica,
2013, 62(4): 047101.
doi: 10.7498/aps.62.047101
|
| [5] |
Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo. Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica,
2013, 62(1): 018101.
doi: 10.7498/aps.62.018101
|
| [6] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica,
2012, 61(22): 227303.
doi: 10.7498/aps.61.227303
|
| [7] |
Li Yi, Zhu Hui-Qun, Zhou Sheng, Huang Yi-Ze, Tong Guo-Xiang, Sun Ruo-Xi, Zhang Yu-Ming, Zheng Qiu-Xin, Li Liu, Shen Yu-Jian, Fang Bao-Ying. Study on thermochromic properties of VO2/ZnO nanocrystalline composite films. Acta Physica Sinica,
2011, 60(9): 098104.
doi: 10.7498/aps.60.098104
|
| [8] |
Bao Shan-Yong, Dong Wu-Jun, Xu Xing, Luan Tian-Bao, Li Jie, Zhang Qing-Yu. Influence of oxygen partial pressure on the crystal quality and optical properties of Mg-doped ZnO films. Acta Physica Sinica,
2011, 60(3): 036804.
doi: 10.7498/aps.60.036804
|
| [9] |
Zhang Fu-Chun, Zhang Wei-Hu, Dong Jun-Tang, Zhang Zhi-Yong. Electronic structure and magnetism of Cr-doped ZnO nanowires. Acta Physica Sinica,
2011, 60(12): 127503.
doi: 10.7498/aps.60.127503
|
| [10] |
Shao Zheng-Zheng, Wang Xiao-Feng, Zhang Xue-Ao, Chang Sheng-Li. Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy. Acta Physica Sinica,
2010, 59(1): 550-554.
doi: 10.7498/aps.59.550
|
| [11] |
Chen Shan, Wu Qing-Yun, Chen Zhi-Gao, Xu Gui-Gui, Huang Zhi-Gao. Ferromagnetism of C doped ZnO: first-principles calculation and Monte Carlo simulation. Acta Physica Sinica,
2009, 58(3): 2011-2017.
doi: 10.7498/aps.58.2011
|
| [12] |
Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
doi: 10.7498/aps.57.1128
|
| [13] |
Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
|
| [14] |
Bi Yan-Jun, Guo Zhi-You, Sun Hui-Qing, Lin Zhu, Dong Yu-Cheng. The electronic structure and optical properties of Co and Mn codoped ZnO from first-principle study. Acta Physica Sinica,
2008, 57(12): 7800-7805.
doi: 10.7498/aps.57.7800
|
| [15] |
Duan Man-Yi, Xu Ming, Zhou Hai-Ping, Chen Qing-Yun, Hu Zhi-Gang, Dong Cheng-Jun. Electronic structure and optical properties of ZnO doped with carbon. Acta Physica Sinica,
2008, 57(10): 6520-6525.
doi: 10.7498/aps.57.6520
|
| [16] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
doi: 10.7498/aps.56.5513
|
| [17] |
Duan Man-Yi, Xu Ming, Zhou Hai-Ping, Shen Yi-Bin, Chen Qing-Yun, Ding Ying-Chun, Zhu Wen-Jun. First-principles study on the electronic structure and optical properties of ZnO doped with transition metal and N. Acta Physica Sinica,
2007, 56(9): 5359-5365.
doi: 10.7498/aps.56.5359
|
| [18] |
Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei. Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica,
2007, 56(4): 2399-2404.
doi: 10.7498/aps.56.2399
|
| [19] |
Guo Bao-Zeng, Gong Na, Shi Jian-Ying, Wang Zhi-Yu. Monte Carlo simulation of the hole transport properties for wurtzite GaN. Acta Physica Sinica,
2006, 55(5): 2470-2475.
doi: 10.7498/aps.55.2470
|
| [20] |
Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min. Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica,
2005, 54(12): 5830-5836.
doi: 10.7498/aps.54.5830
|
下载: