表面态调控对GaN荧光光谱的影响

周楠; 郑强; 胡北辰; 石德权; 苗春雨; 马春雨; 梁红伟; 郝胜智; 张庆瑜

doi:10.7498/aps.63.137802

摘要

采用高阻本征GaN薄膜，通过H3 PO4 刻蚀和SiOxNy 薄膜钝化方法对GaN薄膜进行表面态调控，研究了表面态调控对GaN薄膜光致荧光光谱的影响. 研究发现，H3PO4 刻蚀对改善GaN薄膜的紫外荧光发射作用不大，但显著增加可见荧光的强度；经SiOxNy 薄膜表面钝化的GaN紫外荧光量子效率增加12–13倍，同时对可见荧光有明显增加. 通过比较H3PO4 刻蚀和SiOxNy 薄膜钝化的室温和低温荧光光谱，探讨了表面态调控对GaN紫外荧光、蓝带荧光和黄带荧光的影响及相关物理机理.

关键词:

GaN /
表面态调控 /
荧光光谱

Abstract

Hot phosphor acid (H3 PO4) etching and/or SiOxNy surface passivation are used to change the surface states of high-resistance intrinsic GaN films. The films are investigated to reveal the influence of controlled surface states on photoluminescence (PL) emission. It is found that H3 PO4 etching cannot improve the ultraviolet (UV) PL emission obviously, but the PL spectrum in the range of visible light is considerably enhanced. After passivation with SiOxNy film, the quantum efficiency of UV PL is increased by a factor of 12-13. Meanwhile, the visible PL is significantly enhanced. By analyzing the PL spectra of the etched and passivated samples obtained at room temperature and low temperatures, we discuss the role of surface states in PL emission in the range of UV, blue and yellow bands, and the related physical mechanisms.

Keywords:

作者及机构信息

1.
大连理工大学物理与光电工程学院三束材料改性教育部重点实验室, 大连 116024

Authors and contacts

1.
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China

参考文献

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施引文献

[1]	Nakamura S, Pearton S, Fasol G 2000 The Blue Laser Diode (New York: Springer) pp193-273
[2]	Nagahama S, Yanamoto T, Sano M, Mukai T 2002 Phys. Status. Solidi A 190 235
[3]	Guha S, Bojarczuk N A 1998 Appl. Phys. Lett. 72 415
[4]	Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z, Hao Z B 2004 Acta Phys. Sin. 53 2720 (in Chinese)[罗毅, 郭文平, 邵嘉平, 胡卉, 韩彦军, 薛松, 汪莱, 孙长征, 郝智彪 2004 53 2720]
[5]	Liu N X, Wang H B, Liu J P, Niu N H, Han J, Shen G D 2006 Acta Phys. Sin. 55 1424 (in Chinese)[刘乃鑫, 王怀兵, 刘建平, 牛南辉, 韩军, 沈光地 2006 55 1424]
[6]	Adelmann C, Brault J, Mula G, Daudin B, Lymperakis L, Neugebauer J 2003 Phys. Rev. B 67 165419
[7]	Lee J M, Chang K M, Kim S W, Huh C, Lee I H, Park S J 2000 J. Appl. Phys. 87 7667
[8]	Guha S, Keller R C, Yang V, Shahedipour F, Wessels B W 2001 Appl. Phys. Lett. 78 58
[9]	Chevtchenko S, Reshchikov M A, Zhu K, Moon Y T, Baski A A, Morkoç H 2006 Mater. Res. Soc. Symp. Proc. 892 575
[10]	Chevtchenko S A, Reshchikov M A, Fan Q, Ni X, Moon Y T, Baski A A, Morkoç H 2007 J. Appl. Phys. 101 113709
[11]	Adivarahan V, Simin G, Yang J W, Lunev A, Asif Khan M, Pala N, Shur M, Gaska R 2000 Appl. Phys. Lett. 77 863
[12]	Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U 2004 J. Appl. Phys. 96 2674
[13]	Green B M, Chu K K, Chumbes E M, Smart J A, Shealy J R, Eastman L F 2000 IEEE Electron Dev. Lett. 21 268
[14]	Skromme B J, Sandroff C J, Yablonovitch E, Gmitter T 1987 Appl. Phys. Lett. 51 2022
[15]	Aspnes D E 1983 Surf. Sci. 132 406
[16]	Song J O, Park S J, Seong T Y 2002 Appl. Phys. Lett. 80 3129
[17]	Lai T S, Lin W Z, Mo D 2002 Acta Phys. Sin. 51 1149 (in Chinese)[赖天树, 林位株, 莫党 2002 51 1149]
[18]	Lai T S, Fan H H, Liu Z D, Lin W Z 2003 Acta Phys. Sin. 52 2638 (in Chinese)[赖天树, 范海华, 柳振东, 林位株 2003 52 2638]
[19]	Neugebauer J, Van de Walle C G 1996 Appl. Phys. Lett. 69 503
[20]	Polenta L, Castaldini A, Cavallini A 2007 J. Appl. Phys. 102 063702
[21]	Li S T, Wang L, Xin Y, Peng X X, Xiong C B, Yao D M, Jiang F Y 2000 Chin. J. Lumin. 21 29 (in Chinese)[李述体, 王立, 辛勇, 彭学新, 熊传兵, 姚冬敏, 江风益 2000 发光学报 21 29]
[22]	Reshchikov M A, Morkoç H 2005 J. Appl. Phys. 97 061301
[23]	Reshchikov M A, Shahedipour F, Korotkov R Y, Wessels B W, Ulmer M P 2000 J. Appl. Phys. 87 3351
[24]	Xu B, Yu Q X, Wu Q H, Liao Y, Wang G Z, Fang R C 2004 Acta Phys. Sin. 53 204 (in Chinese)[徐波, 余庆选, 吴气虹, 廖源, 王冠中, 方容川 2004 53 204]
[25]	Yao T, Hong S K 2009 Oxide and Nitride Semiconductors (New York: Springer) pp316-320
[26]	Shen X C 2002 Semiconductor Spectroscopy and Optical Properties (Beijing: Science Press) p288 (in Chinese) [沈学础 2002 半导体光谱和光学性质(北京:科学出版社) 第288页]

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