GaN 光电阴极的研究及其发展

李飙; 常本康; 徐源; 杜晓晴; 杜玉杰; 王晓晖; 张俊举

doi:10.7498/aps.60.088503

摘要

GaN 光电阴极的理论研究主要集中在量子产额、电子能量分布和表面模型三个方面.国内对 GaN 光电阴极的研究尚处于起步阶段,存在基础理论不太明确、关键制备工艺欠成熟的问题.重点探讨了 GaN 光电阴极在发射机理、材料生长、表面净化、激活工艺的优化、变掺杂结构设计和稳定性等方面的研究动向、存在的相关问题及应采取的措施.根据实验结果提出了制备GaN光电阴极的可行性工艺流程.

关键词:

GaN /
光电阴极 /
发展

Negative electron affinity GaN photocathode with greatly advanced photoelectricity performance is described. The research of GaN photocathode focuses on the three points, i. e. , quantum yield, electron energy distribution and surface model, in the last decade. The domestic research of GaN photocathode is still in its infancy, the basic theory is not established, and preparation technology is not mature. In this paper we review emission mechanism, material growth, surface cleaning, activation process optimization, varied-doping structure design and stability of GaN photocathode. The latest experimental results confirm that the fabrication technology of GaN photocathode is feasible.

Keywords:

GaN /
photocathode /
development

作者及机构信息

1.
南京理工大学电子工程与光电技术学院,南京 210094;

2.
重庆大学光电工程学院,重庆 400030

基金项目: 国家自然科学基金 (批准号:60871012, 60701013)资助的课题.

Authors and contacts

1.
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;

2.
College of Optoelectronic Engineering, Chongqing University, Chongqing 400030, China

参考文献

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施引文献

[1]	Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M, Tachino M 2008 Proc. SPIE 6945 69451N1
[2]
[3]	Razeghi M, Rogalski A 1996 J. Appl. Phys. 79 7433
[4]
[5]	Pearton S J, Zolper J C, Shul R J, Ren F 1999 J. Appl. Phys. 86 1
[6]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nucl. Instrum. Meth. Phys. Res. A 567 89
[7]
[8]	Ulmer M P, Wessels W B, Shahedipour F, Korotkov R Y, Joseph C, Nihashi T 2001 Proc. SPIE 4288 246
[9]
[10]	Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333
[11]
[12]
[13]	Wu C I, Kahn A 2000 Appl. Surf. Sci. 162163 250
[14]
[15]	Wu C I, Kahn A 1999 J. Appl. Phys. 86 3209
[16]	Machuca F 2004 Ph. D. Dissertation (Stanford: Stanford University)
[17]
[18]	Uchiyama S, Takagi Y, Niigaki M, Kan H, Kondoh H 2005 Appl. Phys. Lett. 86 103511
[19]
[20]	Li H R, Shen T J, Dai L Y, Ma J Y 2007 Optoelectron. Techn. 27 73 (in Chinese) [李慧蕊、申屠军、戴丽英、马建一 2007 光电子技术 27 73]
[21]
[22]	Li Z M, Zeng Z Q, Chen Q X 2008 Vac. Cryog. 14 236 (in Chinese) [李朝木、曾正清、陈群霞 2008 真空与低温 14 236]
[23]
[24]	Du X Q, Chang B K, Qian Y S, Fu R G, Gao P, Qiao J L 2010 Chin. J. Lasers 37 385 (in Chinese) [杜晓晴、常本康、钱芸生、富容国、高频、乔建良 2010 中国激光 37 385]
[25]
[26]	Du X Q, Chang B K, Qian Y S, Qiao J L, Tian J 2010 Acta Opt. Sin. 30 1 (in Chinese) [杜晓晴、常本康、钱芸生、乔建良、田健 2010 光学学报 30 1]
[27]
[28]
[29]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良、田思、常本康、杜晓晴、高频 2009 58 5847]
[30]
[31]	Qiao J L, Chang B K, Niu J, Yang Z, Zou J J 2009 Chin. J. Vac. Sci. Technol. 29 115 (in Chinese) [乔建良、常本康、牛军、杨智、邹继军 2009 真空科学与技术学报 29 115]
[32]	Uebbing J J, James L W 1970 J. Appl. Phys. 41 4505
[33]
[34]
[35]	Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[36]	Su C Y, Chye P W, Pianetta P, Lindau I, Spicer W E 1979 Surf. Sci. 86 894
[37]
[38]	Gao H R 1987 J. Vac. Sci. Technol. A 5 295
[39]
[40]	Qiao J L, Niu J, Yang Z, Zou J J, Chang B K 2009 Opt. Techn. 35 145 (in Chinese) [乔建良、牛军、杨智、邹继军、常本康 2009 光学技术 35 145]
[41]
[42]	Wang S S, Gu B, Xu Y, Qin F W, Yang D Z 2002 Chin. J. Electron. Dev. 25 1 (in Chinese) [王三胜、顾彪、徐茵、秦福文、杨大智 2002 电子器件 25 1]
[43]
[44]
[45]	Amano H, Sawaki N, Akasaki I, Toyoda Y 1986 Appl. Phys. Lett. 48 353
[46]
[47]	Morko H, Botchkarev A, Salvador A, Sverdlov B 1995 J. Cryst. Growth 150 887
[48]	Molnar R J, Gtz W, Romano L T, Johnson N M 1997 J. Cryst. Growth 178 147
[49]
[50]
[51]	Yoshida S, Misawa S, Gonda S 1983 Appl. Phys. Lett. 42 427
[52]	Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[53]
[54]
[55]	Amano H, Kito M, Hiramatsu K, Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[56]	Nakamura S, Mukai T, Senoh M, Iwasa N 1992 Jpn. J. Appl. Phys. 31 L139
[57]
[58]
[59]	Zhang G Y, Yang Z J, Tong Y Z, Jin S X, Dang X Z, Wang S M 1997 Chin. Phys. Lett. 14 637
[60]	Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2002 J. Vac. Sci. Technol. A 20 1784
[61]
[62]
[63]	Bourreea L E, Chasseb D R, Thambana P L S, Glossera R 2003 Proc. SPIE 4796 11
[64]	Tracy K M, Mecouch W J, Davis R F, Nemanich R J 2003 J. Appl. Phys. 94 3163
[65]
[66]	Fisher D G 1974 IEEE Trans. Electron Dev. 21 541
[67]
[68]
[69]	Du X Q, Chang B K, Zou J J, Li M 2005 Acta Opt. Sin. 25 1411 (in Chinese) [杜晓晴、常本康、邹继军、李敏 2005光学学报 25 1411]
[70]
[71]	Zou J J, Chang B K 2006 Opt. Eng. 45 054001
[72]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛军、邹继军 2010 59 2855]
[73]
[74]	Durek D, Frommberger F, Reichelt T, Westermann M 1999 Appl. Surf. Sci. 143 319
[75]
[76]
[77]	Qiao J L 2010 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [乔建良 2010 博士学位论文 (南京: 南京理工大学)]
[78]
[79]	Liu Z, Sun Y, Machuca F, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Technol. B 21 1953
[80]
[81]	Tereshchenko O E, Shaǐbler G , Yaroshevich A S 2004 Phys. Solid State 46 1949

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