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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica,
2023, 72(13): 138501.
doi: 10.7498/aps.72.20230207
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Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li. A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica,
2022, 71(19): 198501.
doi: 10.7498/aps.71.20220879
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Liu Jia-Wen, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2021, 70(15): 157302.
doi: 10.7498/aps.70.20202156
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Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica,
2021, 70(3): 037102.
doi: 10.7498/aps.70.20200921
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
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Wang Tian-Shu, Zhang Rui-De, Guan Zhe, Ba Ke, Zu Yun-Xiao. Properties of memristor in RLC circuit and diode circuit. Acta Physica Sinica,
2014, 63(17): 178101.
doi: 10.7498/aps.63.178101
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
doi: 10.7498/aps.61.047301
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Zuo Ying-Hong, Wang Jian-Guo, Fan Ru-Yu. Influence of diode gap distance on space charge effects in field emission. Acta Physica Sinica,
2012, 61(21): 215202.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
doi: 10.7498/aps.61.027202
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
doi: 10.7498/aps.60.097302
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Zhang Lin, Yang Fei, Xiao Jian, Gu Wen-Ping, Qiu Yan-Zhang. Power characteristics of SiC bipolar-mode JFET. Acta Physica Sinica,
2011, 60(10): 107304.
doi: 10.7498/aps.60.107304
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
doi: 10.7498/aps.60.017202
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
doi: 10.7498/aps.60.037808
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Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
doi: 10.7498/aps.57.1891
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu. Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica,
2008, 57(10): 6649-6653.
doi: 10.7498/aps.57.6649
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
doi: 10.7498/aps.52.2046
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Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming. . Acta Physica Sinica,
2002, 51(1): 148-152.
doi: 10.7498/aps.51.148
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Xu Chang-Fa, Yang Yin-Tang, Liu Li. . Acta Physica Sinica,
2002, 51(5): 1113-1117.
doi: 10.7498/aps.51.1113
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